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Issue 92, 2016
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Spatial control of direct chemical vapor deposition of graphene on silicon dioxide by directional copper dewetting

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Abstract

In this paper we present a method for the spatial control of direct graphene synthesis onto silicon dioxide by controlled dewetting. The dewetting process is controlled through a combination of using a grooved substrate and conducting copper deposition at an angle. The substrate is then treated using a typical graphene chemical vapor deposition synthesis process at an elevated temperature during which directional dewetting of the copper into the grooves occurs while graphene is deposited at the mesas in between the grooves. The dewetting process and the synthesized graphene layer are characterized. The method is a non-manual, controllable and wafer-scale process, and therefore opens new possibilities for the construction of functional devices such as e.g. transistors.

Graphical abstract: Spatial control of direct chemical vapor deposition of graphene on silicon dioxide by directional copper dewetting

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Publication details

The article was received on 01 Jul 2016, accepted on 06 Sep 2016 and first published on 07 Sep 2016


Article type: Paper
DOI: 10.1039/C6RA16935J
Citation: RSC Adv., 2016,6, 89380-89386
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    Spatial control of direct chemical vapor deposition of graphene on silicon dioxide by directional copper dewetting

    W. T. E. van den Beld, A. van den Berg and J. C. T. Eijkel, RSC Adv., 2016, 6, 89380
    DOI: 10.1039/C6RA16935J

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