Issue 48, 2017, Issue in Progress
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RSC Advances

Correction: Spatial control of direct chemical vapor deposition of graphene on silicon dioxide by directional copper dewetting

Wesley T. E. van den Beld,*a   Albert van den Berga  and  Jan C. T. Eijkela  

* Corresponding authors

a BIOS – Lab on a Chip Group, MESA+ Institute for Nanotechnology, MIRA Institute for Biomedical Engineering and Technical Medicine, University of Twente, The Netherlands
E-mail: w.t.e.vandenbeld@utwente.nl
Tel: +31 53 489 5653

Abstract

Correction for ‘Spatial control of direct chemical vapor deposition of graphene on silicon dioxide by directional copper dewetting’ by Wesley T. E. van den Beld et al., RSC Adv., 2016, 6, 89380–89386.

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Article information

DOI
https://doi.org/10.1039/C7RA90069D
Article type
Correction
Submitted
31 May 2017
Accepted
31 May 2017
First published
09 Jun 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 29926-29926

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Correction: Spatial control of direct chemical vapor deposition of graphene on silicon dioxide by directional copper dewetting

W. T. E. van den Beld, A. van den Berg and J. C. T. Eijkel, RSC Adv., 2017, 7, 29926 DOI: 10.1039/C7RA90069D

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