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Issue 34, 2016
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Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

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Abstract

Vertical crossbar arrays provide a cost-effective approach for high density three-dimensional (3D) integration of resistive random access memory. However, an individual selector device is not allowed to be integrated with the memory cell separately. The development of V-RRAM has impeded the lack of satisfactory self-selective cells. In this study, we have developed a high performance bilayer self-selective device using HfO2 as the memory switching layer and a mixed ionic and electron conductor as the selective layer. The device exhibits high non-linearity (>103) and ultra-low half-select leakage (<0.1 pA). A four layer vertical crossbar array was successfully demonstrated based on the developed self-selective device. High uniformity, ultra-low leakage, sub-nA operation, self-compliance, and excellent read/write disturbance immunity were achieved. The robust array level performance shows attractive potential for low power and high density 3D data storage applications.

Graphical abstract: Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

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Supplementary files

Article information


Submitted
10 Mar 2016
Accepted
08 Jul 2016
First published
11 Jul 2016

Nanoscale, 2016,8, 15629-15636
Article type
Paper
Author version available

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

Q. Luo, X. Xu, H. Liu, H. Lv, T. Gong, S. Long, Q. Liu, H. Sun, W. Banerjee, L. Li, J. Gao, N. Lu and M. Liu, Nanoscale, 2016, 8, 15629
DOI: 10.1039/C6NR02029A

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