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Issue 4, 2016
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Nanogenerators based on vertically aligned InN nanowires

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Abstract

Piezoelectric nanogenerators (NGs) based on vertically aligned InN nanowires (NWs) are fabricated, characterized, and evaluated. In these NGs, arrays of p-type and intrinsic InN NWs prepared by plasma-assisted molecular beam epitaxy (MBE) demonstrate similar piezoelectric properties. The p-type NGs show 160% more output current and 70% more output power product than the intrinsic NGs. The features driving performance enhancement are reduced electrostatic losses due to better NW array morphology, improved electromechanical energy conversion efficiency due to smaller NW diameters, and the higher impedance of intrinsic NGs due to elevated NW surface charge levels. These findings highlight the potential of InN based NGs as a power source for self-powered systems and the importance of NW morphology and surface state in overall NG performance.

Graphical abstract: Nanogenerators based on vertically aligned InN nanowires

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Supplementary files

Article information


Submitted
03 Oct 2015
Accepted
30 Nov 2015
First published
01 Dec 2015

Nanoscale, 2016,8, 2097-2106
Article type
Paper
Author version available

Nanogenerators based on vertically aligned InN nanowires

G. Liu, S. Zhao, R. D. E. Henderson, Z. Leonenko, E. Abdel-Rahman, Z. Mi and D. Ban, Nanoscale, 2016, 8, 2097
DOI: 10.1039/C5NR06841J

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