Direct observation of structural and defect evolution in C-rich SiC using in situ helium ion microscopy†
Abstract
The microstructural effects of SiC swelling, mechanisms of He diffusion and aggregation in C-rich SiC are studied using an in situ helium ion microscope. The additive carbon interface provides improved swelling resistance in SiC to ∼270 nm, and defect formation is not observed until very high He implantation doses.