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Issue 40, 2016
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Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p–n heterojunctions

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Abstract

Vertically stacked van der Waals (vdW) heterojunctions of two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of attention due to their fascinating properties. In this work, we report two important gate-tunable phenomena in new artificial vdW p–n heterojunctions created by vertically stacking p-type multilayer ReSe2 and n-type multilayer WS2: (1) well-defined strong gate-tunable diode-like current rectification across the p–n interface is observed, and the tunability of the electronic processes is attributed to the tunneling-assisted interlayer recombination induced by majority carriers across the vdW interface; (2) the distinct ambipolar behavior under gate voltage modulation both at forward and reverse bias voltages is found in the vdW ReSe2/WS2 heterojunction transistors and a corresponding transport model is proposed for the tunable polarity behaviors. The findings may provide some new opportunities for building nanoscale electronic and optoelectronic devices.

Graphical abstract: Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p–n heterojunctions

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Publication details

The article was received on 08 Jul 2016, accepted on 02 Sep 2016 and first published on 02 Sep 2016


Article type: Communication
DOI: 10.1039/C6CP04752A
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Phys. Chem. Chem. Phys., 2016,18, 27750-27753

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    Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p–n heterojunctions

    C. Wang, S. Yang, W. Xiong, C. Xia, H. Cai, B. Chen, X. Wang, X. Zhang, Z. Wei, S. Tongay, J. Li and Q. Liu, Phys. Chem. Chem. Phys., 2016, 18, 27750
    DOI: 10.1039/C6CP04752A

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