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Issue 12, 2015
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Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

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Abstract

In this study, we report the structural and electrical characteristics of high-κ Sm2O3 and SmTiO3 charge trapping layers on an indium–gallium–zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications. The IGZO TFT non-volatile memory featuring a SmTiO3 charge trapping layer exhibited better characteristics, including a larger memory window (2.7 V), long charge retention time (105 s with charge loss <15%) and better endurance performance for program/erase cycles (104), compared with a Sm2O3 charge trapping layer. These results can be attributed to the SmTiO3 film possessing a high dielectric constant and deep trapping level. The high-κ SmTiO3 is an excellent candidate for use as the trapping layer in IGZO TFT non-volatile memories.

Graphical abstract: Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

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Publication details

The article was received on 01 Dec 2014, accepted on 24 Dec 2014 and first published on 24 Dec 2014


Article type: Communication
DOI: 10.1039/C4RA15538F
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RSC Adv., 2015,5, 8566-8570

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    Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

    J. Her, F. Chen, C. Chen and T. Pan, RSC Adv., 2015, 5, 8566
    DOI: 10.1039/C4RA15538F

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