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Issue 26, 2014
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Fabrication of locally thinned down silicon nanowires

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We report a new and controlled top-down fabrication process to prepare locally thinned down silicon nanowire field-effect devices at wafer-scale. In this process, a low temperature size reduction method based on optimized tetramethylammonium hydroxide wet-etching has been developed on silicon (100) to yield slow (∼0.5 nm s−1) and controllable etching speed as well as an ultra-smooth silicon surface morphology (rms ∼0.15 nm). Combined with electron beam lithography, arrays of monocrystalline silicon nanowires with locally confined thicknesses down to sub-20 nm, lateral dimensions of 150 nm, and lengths of 10 μm were reliably prepared and used. This novel fabrication process provides an alternative route for the fast and reliable preparation of ultrathin silicon nanostructures that can be easily integrated into nanodevices.

Graphical abstract: Fabrication of locally thinned down silicon nanowires

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Article information

09 Jan 2014
13 Apr 2014
First published
16 Apr 2014

J. Mater. Chem. C, 2014,2, 5229-5234
Article type
Author version available

Fabrication of locally thinned down silicon nanowires

D. P. Tran, B. Wolfrum, R. Stockmann, A. Offenhäusser and B. Thierry, J. Mater. Chem. C, 2014, 2, 5229
DOI: 10.1039/C4TC00046C

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