Jump to main content
Jump to site search

Issue 26, 2014
Previous Article Next Article

Fabrication of locally thinned down silicon nanowires

Author affiliations


We report a new and controlled top-down fabrication process to prepare locally thinned down silicon nanowire field-effect devices at wafer-scale. In this process, a low temperature size reduction method based on optimized tetramethylammonium hydroxide wet-etching has been developed on silicon (100) to yield slow (∼0.5 nm s−1) and controllable etching speed as well as an ultra-smooth silicon surface morphology (rms ∼0.15 nm). Combined with electron beam lithography, arrays of monocrystalline silicon nanowires with locally confined thicknesses down to sub-20 nm, lateral dimensions of 150 nm, and lengths of 10 μm were reliably prepared and used. This novel fabrication process provides an alternative route for the fast and reliable preparation of ultrathin silicon nanostructures that can be easily integrated into nanodevices.

Graphical abstract: Fabrication of locally thinned down silicon nanowires

Back to tab navigation

Publication details

The article was received on 09 Jan 2014, accepted on 13 Apr 2014 and first published on 16 Apr 2014

Article type: Paper
DOI: 10.1039/C4TC00046C
Author version
Download author version (PDF)
J. Mater. Chem. C, 2014,2, 5229-5234

  •   Request permissions

    Fabrication of locally thinned down silicon nanowires

    D. P. Tran, B. Wolfrum, R. Stockmann, A. Offenhäusser and B. Thierry, J. Mater. Chem. C, 2014, 2, 5229
    DOI: 10.1039/C4TC00046C

Search articles by author