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Issue 9, 2016
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Ultrasensitive 1D field-effect phototransistors: CH3NH3PbI3 nanowire sensitized individual carbon nanotubes

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Abstract

Field-effect phototransistors were fabricated based on individual carbon nanotubes (CNTs) sensitized by CH3NH3PbI3 nanowires (MAPbI3NWs). These devices represent light responsivities of R = 7.7 × 105 A W−1 under low-lighting conditions in the nW mm−2 range, unprecedented among CNT-based photodetectors. At high incident power (∼1 mW mm−2), light soaking results in a negative photocurrent, turning the device insulating. We interpret the phenomenon as a result of efficient free photoexcited charge generation and charge transfer of photoexcited holes from the perovskite to the carbon nanotube. The charge transfer improves conductance by increasing the number of carriers, but leaves electrons behind. At high illumination intensity their random electrostatic potential quenches mobility in the nanotube.

Graphical abstract: Ultrasensitive 1D field-effect phototransistors: CH3NH3PbI3 nanowire sensitized individual carbon nanotubes

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Supplementary files

Article information


Submitted
29 Sep 2015
Accepted
27 Jan 2016
First published
28 Jan 2016

Nanoscale, 2016,8, 4888-4893
Article type
Communication
Author version available

Ultrasensitive 1D field-effect phototransistors: CH3NH3PbI3 nanowire sensitized individual carbon nanotubes

M. Spina, B. Náfrádi, H. M. Tóháti, K. Kamarás, E. Bonvin, R. Gaal, L. Forró and E. Horváth, Nanoscale, 2016, 8, 4888
DOI: 10.1039/C5NR06727H

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