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Issue 44, 2013
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Alkali earth metal dopants for high performance and aqueous-derived ZnO TFT

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Abstract

We introduce high performance, low-temperature (<300 °C), and aqueous precursor-derived ZnO thin film transistors (TFTs) with alkali earth metal doping. Ca-doped ZnO TFTs exhibited excellent electrical performance with a field effect mobility of 6 cm2 V−1 s−1 and an on/off current ratio of 107. The origin of the enhancement in electrical properties by alkali earth metal dopants in ZnO was also investigated.

Graphical abstract: Alkali earth metal dopants for high performance and aqueous-derived ZnO TFT

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Article information


Submitted
05 Jun 2013
Accepted
10 Sep 2013
First published
16 Sep 2013

RSC Adv., 2013,3, 21339-21342
Article type
Communication

Alkali earth metal dopants for high performance and aqueous-derived ZnO TFT

S. Y. Park, K. Kim, K. Lim, E. Lee, S. Kim, H. Kim and Y. S. Kim, RSC Adv., 2013, 3, 21339
DOI: 10.1039/C3RA42784F

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