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Issue 2, 2014
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Influence of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot solids

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Abstract

We investigated the effects of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot (CQD) solids. We applied high pressure to PbS CQD solids using nitrogen gas to reduce the inter-dot distance. Using this simple process, we obtained conductive PbS CQD solids. Terahertz time-domain spectroscopy was used to study charge carrier transport as a function of pressure. We found that the minimum pressure needed to increase the dielectric constant, conductivity, and carrier mobility was 4 MPa. All properties dramatically improved at 5 MPa; for example, the mobility increased from 0.13 cm2 V−1 s−1 at 0.1 MPa to 0.91 cm2 V−1 s−1 at 5 MPa. We propose this simple process as a nondestructive approach for making conductive PbS CQD solids that are free of chemical and physical defects.

Graphical abstract: Influence of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot solids

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Publication details

The article was received on 16 Jul 2013, accepted on 29 Oct 2013 and first published on 01 Nov 2013


Article type: Paper
DOI: 10.1039/C3NR03641C
Nanoscale, 2014,6, 903-907

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    Influence of high-pressure treatment on charge carrier transport in PbS colloidal quantum dot solids

    S. J. Heo, S. Yoon, S. H. Oh, D. H. Yoon and H. J. Kim, Nanoscale, 2014, 6, 903
    DOI: 10.1039/C3NR03641C

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