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Issue 19, 2013
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Highly conductive NiCo2S4 urchin-like nanostructures for high-rate pseudocapacitors

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Abstract

A 3D highly conductive urchin-like NiCo2S4 nanostructure has been successfully prepared using a facile precursor transformation method. Remarkably, the NiCo2S4 electroactive material demonstrates superior electrochemical performance with ultrahigh high-rate capacitance, very high specific capacitance, and excellent cycling stability.

Graphical abstract: Highly conductive NiCo2S4 urchin-like nanostructures for high-rate pseudocapacitors

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Supplementary files

Article information


Submitted
07 Jun 2013
Accepted
14 Jul 2013
First published
16 Jul 2013

Nanoscale, 2013,5, 8879-8883
Article type
Communication

Highly conductive NiCo2S4 urchin-like nanostructures for high-rate pseudocapacitors

H. Chen, J. Jiang, L. Zhang, H. Wan, T. Qi and D. Xia, Nanoscale, 2013, 5, 8879
DOI: 10.1039/C3NR02958A

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