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Issue 3, 2013
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Bandgap engineering of CdxZn1−xTe nanowires

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Abstract

Bandgap engineering of single-crystalline alloy CdxZn1−xTe (0 ≤ x ≤ 1) nanowires is achieved successfully through control of growth temperature and a two zone source system in a vapor–liquid–solid process. Extensive characterization using electron microscopy, Raman spectroscopy and photoluminescence shows highly crystalline alloy nanowires with precise tuning of the bandgap. It is well known that bulk CdxZn1−xTe is popular for construction of radiation detectors and availability of a nanowire form of this material would help to improve detection sensitivity and miniaturization. This is a step forward towards the accomplishment of tunable and predetermined bandgap emissions for various applications.

Graphical abstract: Bandgap engineering of CdxZn1−xTe nanowires

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Article information


Submitted
22 Oct 2012
Accepted
17 Dec 2012
First published
18 Dec 2012

Nanoscale, 2013,5, 932-935
Article type
Communication

Bandgap engineering of CdxZn1−xTe nanowires

K. Davami, J. Pohl, M. Shaygan, N. Kheirabi, H. Faryabi, G. Cuniberti, J. Lee and M. Meyyappan, Nanoscale, 2013, 5, 932
DOI: 10.1039/C2NR33284A

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