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Issue 3, 2013
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Three-dimensional etching of silicon for the fabrication of low-dimensional and suspended devices

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Abstract

In order to expand the use of nanoscaled silicon structures we present a new etching method that allows us to shape silicon with sub-10 nm precision. This top-down, CMOS compatible etching scheme allows us to fabricate silicon devices with quantum behavior without relying on difficult lateral lithography. We utilize this novel etching process to create quantum dots, quantum wires, vertical transistors and ultra-high-aspect ratio structures. We believe that this etching technique will have broad and significant impacts and applications in nano-photonics, bio-sensing, and nano-electronics.

Graphical abstract: Three-dimensional etching of silicon for the fabrication of low-dimensional and suspended devices

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Article information


Submitted
28 Sep 2012
Accepted
11 Dec 2012
First published
13 Dec 2012

Nanoscale, 2013,5, 927-931
Article type
Communication

Three-dimensional etching of silicon for the fabrication of low-dimensional and suspended devices

S. S. Walavalkar, A. P. Homyk, M. D. Henry and A. Scherer, Nanoscale, 2013, 5, 927
DOI: 10.1039/C2NR32981F

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