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Issue 90, 2012
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FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors

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Abstract

Hole mobility was evaluated by top-contact bottom gate field effect transistor and time resolved microwave conductivity measurements in 2,6-dithienylanthracene and hexyl-substituted 2,6-dithienylanthracene films prepared by spin-coating of their α-diketone precursors followed by photoirradiation, revealing enough high potentials for semiconducting films with charge carrier mobilities of 0.8–0.9 cm2 V−1 s−1 in the photo-irradiated films.

Graphical abstract: FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors

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Supplementary files

Article information


Submitted
27 Jul 2012
Accepted
20 Sep 2012
First published
09 Oct 2012

Chem. Commun., 2012,48, 11136-11138
Article type
Communication

FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors

H. Yamada, C. Ohashi, T. Aotake, S. Katsuta, Y. Honsho, H. Kawano, T. Okujima, H. Uno, N. Ono, S. Seki and K. Nakayama, Chem. Commun., 2012, 48, 11136
DOI: 10.1039/C2CC35439J

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