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Issue 90, 2012
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FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors†

Hiroko Yamada,*ab   Chika Ohashi,c   Tatsuya Aotake,a   Shuhei Katsuta,a   Yoshihito Honsho,d   Hiroo Kawano,e   Tetsuo Okujima,e   Hidemitsu Uno,e   Noboru Ono,e   Shu Seki*d  and  Ken-ichi Nakayama*bc  
Author affiliations

* Corresponding authors

a Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Japan
E-mail: hyamada@ms.naist.jp
Fax: +81 743-724-6042

b CREST, JST, 7 Goban-cho, Chiyoda-ku 102-0076, Japan

c Department of Organic Device Engineering, Graduate School of Science and Engineering, Yamagata University, Yonezawa 992-8510, Japan
E-mail: nakayama@yz.yamagata-u.ac.jp
Fax: +81 238-26-3713

d Department of Applied Chemistry, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Japan
E-mail: seki@chem.eng.osaka-u.ac.jp
Fax: +81 6-6879-4586

e Department of Chemistry and Biology, Graduate School of Science and Engineering, Ehime University, Matsuyama, Japan

Abstract

Hole mobility was evaluated by top-contact bottom gate field effect transistor and time resolved microwave conductivity measurements in 2,6-dithienylanthracene and hexyl-substituted 2,6-dithienylanthracene films prepared by spin-coating of their α-diketone precursors followed by photoirradiation, revealing enough high potentials for semiconducting films with charge carrier mobilities of 0.8–0.9 cm2 V−1 s−1 in the photo-irradiated films.

Graphical abstract: FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors

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Article information

https://doi.org/10.1039/C2CC35439J
Submitted
27 Jul 2012
Accepted
20 Sep 2012
First published
09 Oct 2012
Chem. Commun., 2012,48, 11136-11138
Article type
Communication
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FET performance and substitution effect on 2,6-dithienylanthracene devices prepared by photoirradiation of their diketone precursors

H. Yamada, C. Ohashi, T. Aotake, S. Katsuta, Y. Honsho, H. Kawano, T. Okujima, H. Uno, N. Ono, S. Seki and K. Nakayama, Chem. Commun., 2012, 48, 11136
DOI: 10.1039/C2CC35439J

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