Issue 5, 2012

Photoconductive and supramolecularly engineered organic field-effect transistors based on fibres from donor–acceptor dyads

Abstract

We report on the formation of photoconductive self-assembled fibres by solvent induced precipitation of a HBC–PMI donor–acceptor dyad. Kelvin Probe Force Microscopy revealed that upon illumination with white light the surface potential of the fibres shifted to negative values due to a build-up of negative charge. When integrated in a field-effect transistor (FET) configuration, the devices can be turned ‘on’ much more efficiently using light than conventional bias triggered field-effect, suggesting that these structures could be used for the fabrication of light sensing devices. Such a double gating represents an important step towards bi-functional organic FETs, in which the current through the junction can be modulated both optically (by photoexcitation) and electrically (by gate control).

Graphical abstract: Photoconductive and supramolecularly engineered organic field-effect transistors based on fibres from donor–acceptor dyads

Supplementary files

Article information

Article type
Paper
Submitted
01 Nov 2011
Accepted
13 Dec 2011
First published
20 Dec 2011

Nanoscale, 2012,4, 1677-1681

Photoconductive and supramolecularly engineered organic field-effect transistors based on fibres from donor–acceptor dyads

M. Treier, A. Liscio, J. M. Mativetsky, M. Kastler, K. Müllen, V. Palermo and P. Samorì, Nanoscale, 2012, 4, 1677 DOI: 10.1039/C2NR11635A

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