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Issue 5, 2012
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Photoconductive and supramolecularly engineered organic field-effect transistors based on fibres from donor–acceptor dyads

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Abstract

We report on the formation of photoconductive self-assembled fibres by solvent induced precipitation of a HBC–PMI donor–acceptor dyad. Kelvin Probe Force Microscopy revealed that upon illumination with white light the surface potential of the fibres shifted to negative values due to a build-up of negative charge. When integrated in a field-effect transistor (FET) configuration, the devices can be turned ‘on’ much more efficiently using light than conventional bias triggered field-effect, suggesting that these structures could be used for the fabrication of light sensing devices. Such a double gating represents an important step towards bi-functional organic FETs, in which the current through the junction can be modulated both optically (by photoexcitation) and electrically (by gate control).

Graphical abstract: Photoconductive and supramolecularly engineered organic field-effect transistors based on fibres from donor–acceptor dyads

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Publication details

The article was received on 01 Nov 2011, accepted on 13 Dec 2011 and first published on 20 Dec 2011


Article type: Paper
DOI: 10.1039/C2NR11635A
Citation: Nanoscale, 2012,4, 1677-1681
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    Photoconductive and supramolecularly engineered organic field-effect transistors based on fibres from donor–acceptor dyads

    M. Treier, A. Liscio, J. M. Mativetsky, M. Kastler, K. Müllen, V. Palermo and P. Samorì, Nanoscale, 2012, 4, 1677
    DOI: 10.1039/C2NR11635A

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