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Issue 5, 2012
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Photoconductive and supramolecularly engineered organic field-effect transistors based on fibres from donor–acceptor dyads

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Abstract

We report on the formation of photoconductive self-assembled fibres by solvent induced precipitation of a HBC–PMI donor–acceptor dyad. Kelvin Probe Force Microscopy revealed that upon illumination with white light the surface potential of the fibres shifted to negative values due to a build-up of negative charge. When integrated in a field-effect transistor (FET) configuration, the devices can be turned ‘on’ much more efficiently using light than conventional bias triggered field-effect, suggesting that these structures could be used for the fabrication of light sensing devices. Such a double gating represents an important step towards bi-functional organic FETs, in which the current through the junction can be modulated both optically (by photoexcitation) and electrically (by gate control).

Graphical abstract: Photoconductive and supramolecularly engineered organic field-effect transistors based on fibres from donor–acceptor dyads

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Article information


Submitted
01 Nov 2011
Accepted
13 Dec 2011
First published
20 Dec 2011

Nanoscale, 2012,4, 1677-1681
Article type
Paper

Photoconductive and supramolecularly engineered organic field-effect transistors based on fibres from donor–acceptor dyads

M. Treier, A. Liscio, J. M. Mativetsky, M. Kastler, K. Müllen, V. Palermo and P. Samorì, Nanoscale, 2012, 4, 1677
DOI: 10.1039/C2NR11635A

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