UV and visible light controllable depletion zone of ZnO-polyaniline p–n junction and its application in a photoresponsive sensor
Abstract
In this communication, we report that the depletion zone thickness of the p–n junction between an n-type
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* Corresponding authors
a
School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0620, USA
E-mail:
yulin.deng@chbe.gatech.edu
Fax: 404-894-4778
Tel: 404-894-5759
b Key Laboratory of Polyoxometalate Science of Ministry of Education, Department of Chemistry, Northeast Normal University, Changchun, Jilin 130024, P.R. China
c State Key Laboratory of Fine Chemicals, Chemical Engineering and Technology, Dalian University of Technology, Dalian, P.R. China
In this communication, we report that the depletion zone thickness of the p–n junction between an n-type
J. Gong, Y. Li and Y. Deng, Phys. Chem. Chem. Phys., 2010, 12, 14864 DOI: 10.1039/C0CP01101K
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