Tuning of electronic transport characteristics of ZnO micro/nanowire piezotronic Schottky diodes by bending: threshold voltage shift

Abstract

We report the longitudinal and transverse PtIr–ZnO wire piezotronic Schottky diodes in a conductive atomic force microscope (C-AFM). The tuning of electronic transport characteristics by bending ZnO wire was investigated. For longitudinal transport, the threshold voltage can be tuned over a wide range (from 1 V to 8 V) during the bending process. For transverse transport, the threshold voltage can be positively tuned at the stretched side, and negatively tuned at the compressed side. The possible mechanisms are discussed.