Fatemeh Kazemi
Kerdabadi
a,
Parviz
Kameli
*a,
Mohamad Mohsen
Momeni
*b,
Tapati
Sarkar
d and
Bagher
Aslibeiki
cd
aDepartment of Physics, Isfahan University of Technology, Isfahan, 84156-83111, Iran. E-mail: kameli@iut.ac.ir
bDepartment of Chemistry, Isfahan University of Technology, Isfahan, 84156-83111, Iran. E-mail: mm.momeni@iut.ac.ir
cDepartment of Physics, University of Tabriz, Tabriz, Iran
dDepartment of Materials Science and Engineering, Uppsala University, Box 35, Uppsala SE-75103, Sweden
First published on 12th January 2026
Rational design of electrode materials with tailored structural and electronic properties is crucial for the development of high-performance supercapacitors. Here, we report a Zn/V co-doping strategy for NiMoO4 (ZV-NM), which simultaneously induces abundant oxygen vacancies and a phase transformation from the α to the β phase. The synergistic effects of lattice distortion, enhanced redox activity, and improved electrical conductivity collectively endow ZV-NM3 with extraordinary charge storage capabilities, achieving a remarkable specific capacitance of 1423.1 F g−1 (316.24 mA h g−1) at a current density of 0.4 A g−1. When integrated into an asymmetric supercapacitor device (ZV-NM3/NF//GS), this optimized electrode exhibits a specific capacitance of 101 F g−1 at a current density of 0.4 A g−1. It offers a high energy density of 45.4 Wh kg−1 and a power density of 1.31 kW kg−1, while retaining 90.45% of its capacitance after 10
000 charge/discharge cycles. These results highlight the effectiveness of binary doping in engineering vacancy-rich, phase-optimized transition metal oxides for next-generation energy storage applications.
Beyond the observed phase transformation, the microstructural properties of the synthesized materials were notably influenced by the doping strategy. The crystallite size (D) and the lattice strain (ε) were determined through the Williamson–Hall (W–H) method.33 As summarized in Table S2, pristine NiMoO4 exhibited the largest crystallite size of 103 nm, along with the lowest lattice strain, indicating a well-ordered crystalline structure. Upon individual doping, both Zn- and V-doped samples showed significant reductions in crystallite size to 62 nm and 45 nm, respectively. Zn doping induced a slight increase in strain, likely due to lattice mismatch caused by the substitution of Ni2+ with larger Zn2+ ions, resulting in moderate lattice distortion. Conversely, V doping led to a further rise in strain, potentially due to enhanced defect formation and oxygen vacancy generation associated with the substitution of Mo6+ by V5+. The most significant structural evolution was observed in the ZV-NM3 sample, which exhibited the smallest crystallite size (28 nm) and the highest lattice strain. These observations suggest substantial microstructural disorder arising from the combined effects of dual doping. The significant suppression of crystal growth and the increased lattice distortion are likely attributed to enhanced structural mismatch and the synergistic introduction of defects, which increase the surface area and grain boundaries, thereby exposing more redox-active sites, facilitating faster ion diffusion.34,35
Raman spectroscopy was employed to investigate the impact of individual doping of Zn and V and simultaneous Zn/V dual doping on the chemical composition and molecular structure modifications in NiMoO4. As depicted in Fig. 1(b and c), all spectra showed a dominant α-NiMoO4 phase, particularly symmetric Mo
O at ∼961 cm−1 and asymmetric Mo–O peak stretching at ∼910 cm−1, confirming retention of the MoO6 octahedral structure across all four samples.36 The Z-NM Raman profile preserved sharp Mo–O bands with an evident red shift, reflecting that Zn2+ incorporation mainly causes local lattice strain without significantly disrupting the phase development. Zn doping predominantly affects Ni–O–Mo connectivity without compromising Mo–O structural integrity.35 The presence of vanadium induced significant broadening of the Mo
O peak and enhanced mid-frequency bands (∼493–708 cm−1), suggesting lattice distortion from V5+ substitution at Mo6+ sites.37 Weak β-phase features (e.g. peaks at ∼354, ∼367, and ∼827 cm−1) were more pronounced in V-NM, indicating that V promotes partial formation of β-NiMoO4 through structural perturbation.38,39 The co-doped sample (ZV-NM3) displayed broadened Mo–O peaks and mid-frequency features combining both V- and Zn-related effects. Notably, β-phase bands were more evident than in Z-NM, implying that V5+ plays a dominant role in driving β-phase formation, while Zn2+ modulates local distortions at Ni2+ sites. Moreover, as with V-NM and ZV-NM3, the lack of bands near ∼816 cm−1 affirms that vanadium is integrated into the host lattice rather than forming segregated V–O phases. Notably, the main Raman peaks associated with the α and β phases of dual-doped NM (e.g. ZV-NM1 and ZV-NM2 samples) are observed clearly in Fig. S2(b). These Raman results further confirm the successful dopant incorporation in the NiMoO4 configuration, demonstrating their impact on the phase development.
The morphologies, EDX, and mapping analysis of the synthesized samples are identified by FESEM analysis. FE-SEM images of NM and ZV-NM3 (Fig. 2(a–d)) show the 1D nanorods of NM. The 1D nanorods are uniform and the morphology remains unchanged after Zn and V doping. Such a type of morphology creates a free space between the rods, facilitating good contact with electrolyte ions and promoting rapid diffusion, resulting in high electrochemical performance.40,41 As depicted in Fig. 2(e), the mapping analysis of ZV-NM3 shows the uniform distribution of nickel (Ni), molybdenum (Mo), oxygen (O), zinc (Zn) and vanadium (V).
![]() | ||
| Fig. 2 (a and b) FE-SEM of NM and (c and d) ZV-NM3 at different magnifications, and (e) EDX elemental mapping of ZV-NM3. | ||
Fig. 3 presents the nitrogen adsorption–desorption isotherms (a) and the corresponding pore size distribution (b) for the synthesized materials. The ZV-NM3 composite exhibits a characteristic Type IV isotherm with an H4 hysteresis loop, indicative of a highly porous structure dominated by mesopores. Crucially, ZV-NM3 displays a massive enhancement in adsorption capacity (518.7 m2 g−1), while the other samples (V-NM, Z-NM, and NM) show minimal porosity. The BJH pore size distribution (3(b)) confirms this observation, showing a sharp, dominant peak for ZV-NM3 centered in the small mesopore range (estimated at 3-10 nm), suggesting a highly tailored porous network critical for efficient surface-based performance. This exceptionally high surface area and ideal mesopore size distribution provide abundant, accessible active sites and facilitate rapid ion transport, which are essential prerequisites for achieving superior charge storage capacity and rate capability in supercapacitors.41,42
To investigate the surface electronic structures and chemical states of the synthesized materials, high-resolution X-ray Photoelectron Spectroscopy (XPS) was conducted for NM and ZV-NM3, focusing on Ni 2p, Mo 3d, Zn 2p, V 2p, and O 1s core levels (Fig. 4). The schematic presentation of the simultaneous incorporation of Zn and V, which induces lattice distortion and oxygen vacancies in the NiMoO4 host material, is provided in Fig. 4(a). Quantitative atomic percentages were determined by normalizing the peak areas with relative sensitivity factors according to eqn (S4). The dopant concentrations are relatively low (1–2 at%), consistent with their role as minor cationic substitutions. Detailed atomic percentages for all elements in each sample are provided in Table S3 of the SI. The relatively low concentrations of Zn and V are consistent with their role as dopants rather than major lattice constituents, supporting the effective cationic substitution without altering the primary NiMoO4 framework. The broad XPS survey spectrum (Fig. 4(b)) confirms successful incorporation of Zn and V dopants, as evidenced by clear Zn 2p and V 2p signatures alongside preserved Mo, Ni, and O peaks. The formation of a quaternary composite is thus validated. As shown in Fig. 4(c), both samples exhibit two prominent spin–orbit doublets Ni 2p3/2 and Ni 2p1/2 alongside associated shake-up satellite peaks. For NM, characteristic peaks at ∼855.7 eV and ∼858.0 eV (Ni 2p3/2) are assigned to Ni2+ and Ni3+, respectively. The corresponding Ni 2p1/2 peaks emerge at ∼873.3 eV (Ni2+) and ∼875.5 eV (Ni3+), with satellite features at ∼862.0 eV and ∼880.6 eV. The observed spin–orbit separation of 17.6 eV confirms the coexistence of Ni2+/Ni3+ species, essential for faradaic charge storage.43,44 Additionally, the enhanced satellite peak intensity and elevated Ni3+ content in ZV-NM3 suggest a higher density of redox-active sites, contributing to improved charge transfer dynamics and enhanced pseudocapacitive behavior.45Fig. 4(d) presents Mo 3d spectra deconvoluted into Mo6+ and Mo4+ doublets, separated by ∼3.1 eV. In pristine NM, the peaks at ∼232.3 eV and ∼235.6 eV are attributed to Mo6+, while those at ∼233.2 eV and ∼235.3 eV correspond to Mo4+.46 The presence of a faint satellite near the Mo 3d3/2 feature suggests a shake-up process consistent with ionic Mo–O bonding in the NM pattern. ZV-NM3 exhibits an intensified Mo4+ signature and reduced satellite peak intensity, pointing to greater electron delocalization and enhanced covalency.47 This shift implies increased oxygen deficiency and a more conductive framework that favors charge mobility and redox interactions. Fig. 4(e) details the deconvoluted O 1s spectra, consisting of lattice oxygen (OL), oxygen vacancies (OV), and chemisorbed oxygen (OC). In NM, the dominant component at ∼530.1 eV reflects an ordered crystal structure with few defects. Subordinate peaks at ∼531.3 eV (OV) and ∼533.1 eV (OC) suggest limited vacancies and surface adsorption. Conversely, ZV-NM3 exhibits a notable increase in the oxygen vacancy signal (∼531.0 eV) and a corresponding decrease in lattice oxygen intensity. This trend denotes a higher defect concentration and improved conductivity, facilitating enhanced ion diffusion and redox activity.48 A slight reduction in chemisorbed oxygen suggests a cleaner, more stable surface. Fig. 4(f and g) illustrate the chemical states of Zn and V in ZV-NM3. The Zn 2p spectrum shows well-resolved peaks at ∼1022.3 eV (Zn 2p3/2) and ∼1045.4 eV (Zn 2p1/2), with a spin–orbit splitting of ∼23.1 eV, consistent with Zn2+ in a stable oxide environment.30 The V 2p region is deconvoluted into four peaks: V4+ (at ∼516.8 eV and ∼524.7 eV) and V5+ (at ∼517.7 eV and ∼525.7 eV). Quantitative analysis reveals a dominant V4+ contribution, suggesting partial reduction likely driven by substitutional doping and lattice oxygen deficiencies.49,50 Moreover, XPS analysis was conducted to further evaluate the compositional characteristics of Z-NM and V-NM nanorods, as evidenced in Fig. S3(a–i). The result demonstrates an increased presence of Ni3+, Mo4+, and oxygen deficiency upon vanadium incorporation into the NM configuration. These findings reveal the importance of the induced dopants (Zn and V) in enhancing redox-active sites, promising for the increase of electrochemical performance.
Fig. S4(a) illustrates the optical absorption spectra of the four prepared samples. Moreover, the direct optical bandgaps derived from Tauc plots (Fig. S4(b)) reveal a systematic reduction upon single and co-metal doping. The pristine NM shows a bandgap of 2.46 eV, which decreases to 2.28 eV for Z-NM, 2.32 eV for V-NM, and further to 2.26 eV for Zn and V co-doped ZV-NM3, consistent with values reported in the literature51,52. This bandgap narrowing reflects the introduction of defect states, primarily oxygen vacancies, as confirmed by XPS and Raman analyses. Notably, Zn doping significantly enhances electronic conductivity by facilitating charge carrier mobility through these defect states, while V incorporation further modifies the electronic structure53. The combined Zn–V co-doping thus synergistically improves the electronic conductivity and is expected to enhance the charge storage performance of NiMoO4 electrodes. Fig. S4(c) presents the Mott–Schottky curve of the pristine NM and the ZV-NM3 electrodes measured in 3 M KOH. Both samples exhibit a negative slope, confirming p-type semiconductor behavior, which is consistent with hole-dominated charge transport in NiMoO4-based materials54–56. However, the ZV-NM3 electrode shows a distinctly different slope and intercept compared to the pristine NM, indicating that Zn/V co-doping significantly alters the semiconductor characteristics. The flat-band potential (Efb), extracted from the x-intercept of the linear region, shifts from 0.167 V (NM) to 0.252 V (ZV-NM3) vs. Ag/AgCl. This positive shift suggests an increased hole concentration and modified band alignment due to the introduction of Zn2+ and V5+/V4+ species, which is consistent with the formation of additional oxygen vacancies induced by Zn and V co-doping57. Additionally, the reduced slope of the ZV-NM3 curve implies a higher acceptor density, which facilitates improved charge transport and enhances electrical conductivity.
| NiMoO4(s) + OH− → NiOOH(s) + MoO42−(aq) + e− | (1) |
| NiOOH(s) + MoO42−(aq) + e− → NiMoO4(s) + OH− | (2) |
Analysis of the CV curves reveals that NF, pristine NM, and individually doped NM electrodes exhibit relatively small enclosed CV areas, signifying a limited contribution to overall electrochemical performance. In contrast, the ZV-NM3 electrode displays the largest integrated CV area among all tested samples, clearly indicating its superior specific capacitance. The specific capacitance values, calculated using eqn (S6) and presented in Fig. 5(b), are as follows: NM: 529 F g−1, Z-NM: 467 F g−1, V-NM: 561 F g−1, ZV-NM1: 769 F g−1, ZV-NM2: 825 F g−1, and ZV-NM3: 1175 F g−1.
ZV-NM3 notably outperforms the others, suggesting a greater number of electrochemically active sites. This enhancement aligns with structural and compositional analyses, pointing to a synergistic effect from the optimized incorporation of Ni, Zn, and V dopants. The phase development and distinct oxygen vacancies created by Zn–V co-doping at optimal concentrations provide abundant, accessible active sites for electrolyte ion interactions, as evidenced by Raman and XPS analysis, reinforcing the importance of such cation–cation doping strategies in boosting charge storage capabilities within the NM matrix.63Fig. 5(c–f) further illustrate CV profiles of NM, Z-NM, V-NM, and ZV-NM3 electrodes recorded at varying scan rates (1–50 mV s−1) across a potential window of −0.2 to 0.6 V (vs. Ag/AgCl). The consistent shape of these profiles across different scan rates highlights rapid redox processes and efficient electron/ion transfer kinetics.22,64 With increasing scan rates, both the integrated area and current density rise significantly while maintaining peak symmetry and reversibility, signs of robust electrochemical activity. Prominent redox peaks are attributed to fast and reversible interactions involving Ni2+/Ni3+ and V5+/V4+ species. At low scan rates, diffusion dominates, allowing more ions to reach the electrode interface, although fewer participate in actual charge transfer. Conversely, at higher scan rates, ion diffusion is limited by time, and redox reactions are mainly governed by quick adsorption/desorption dynamics at the electrode/electrolyte interface.65,66 Nonetheless, even under rapid cycling conditions, the system maintains high current densities and integral areas, underscoring its excellent rate capability. An essential parameter linking electroactive site density to accessible surface area is the voltammetric charge (Q*), calculated using eqn (S11).67,68 As expected, Q* increases with decreasing scan rate, reflecting enhanced ion diffusion and more effective interaction between electrolyte ions and electrode surfaces. Among all tested samples, the ZV-NM3 electrode demonstrates a remarkable Q* of 6.27 C cm−2 at a scan rate of 4 mV s−1, surpassing those of NM (2.82 C cm−2), Z-NM (2.49 C cm−2), and V-NM (2.98 C cm−2). This elevated specific charge confirms that ZV-NM3 hosts a higher concentration of electrochemically active sites than the other materials. The result complements earlier findings and underscores the impact of optimized dual-doping strategies on improving charge storage efficiency in NM-based electrodes.
The relationship between peak current (i) and scan rate (ν) can be described by the equation
![]() | (3) |
i versus log
ν plots recorded at a potential of 0.4 V for various electrodes. All tested samples show near-linear behavior, and the calculated b values for pristine and single doped electrodes fall between 0.5 and 1.0, suggesting dominantly capacitive mechanisms with partial faradaic effects.69 In contrast, the ZV-NM3 electrode displays a distinct trend (pink line in Fig. 6(a and b)), indicating a diffusion-controlled process driven by redox reactions, highlighting its potential for high specific capacitance and energy density. Specifically, the b values for anodic and cathodic peaks of the pure NM electrode are 0.98 and 0.99, respectively, consistent with capacitive behavior. For ZV-NM3, these values are significantly lower, 0.44 (oxidation) and 0.71 (reduction), underscoring the impact of dopants in promoting ionic diffusion through the NM matrix. These findings suggest enhanced energy storage capability facilitated by improved charge transport pathways. By employing the above equation, this analysis provides a robust method for differentiating between surface-controlled and diffusion-controlled processes, offering valuable insights into electrode kinetics. Fig. 6(c–f) illustrate how the total charge storage behavior evolves with scan rate, differentiating between capacitive and diffusion mechanisms. In these figures, the purple regions correspond to capacitive current, while the blue zones indicate diffusion-driven contributions. The data reveal that the dominant charge storage mechanism at lower scan rates is diffusion-controlled, whereas capacitive contributions grow more prominent at higher scan rates. This trend is consistent with the previously discussed b-values derived from CV curves. At elevated scan rates, ions have insufficient time to engage in deep redox interactions within the NM matrix. Instead, they undergo rapid adsorption/desorption alongside superficial redox reactions near the electrode/electrolyte interface. At lower scan rates, however, diffusion processes dominate due to extended interaction time, allowing ions to penetrate deeper into the electrode structure, supporting pseudocapacitive behavior and contributing to high specific capacitance.70,71 In addition, Fig. S6(a–f) indicate the CV profiles and charge storage mechanism of ZV-NM1 and ZV-NM2 electrodes, which indicates that their anodic b-values are 1 and 0.71 at a potential of 0.4 V, respectively. Therefore, this dual nature suggests that charge storage in the doped electrodes stems primarily from pseudocapacitance, complemented by electric double-layer capacitance (EDLC).72 The enhanced performance can be attributed to the synergistic effect of the quaternary metal combination: Ni, Zn, V, and Mo. Ni, Zn, and V improve electrical conductivity and activate redox reactions, while Zn and V promote efficient electron transport and increase the number of electrochemically active sites.
Galvanostatic charge/discharge (GCD) analysis was employed to evaluate the charge storage capabilities of the synthesized electrode materials in a 3 M KOH electrolyte. Measurements were conducted at a current density of 0.4 A g−1 across a potential window of 0–0.8 V (Fig. 7(a)). Notably, the ZV-NM3 electrode exhibited the longest discharge time, underscoring its superior energy storage capacity, a result consistent with CV profiles. This exceptional performance stems from strategic dual-cation doping of Zn and V into the NiMoO4 framework, coupled with its 1D nanorod morphology. These compositional and structural modifications significantly enhance the specific capacitance. Fig. 7(b–e) present the GCD curves of NM, Z-NM, V-NM, and ZV-NM3 electrodes at various current densities. Specific capacitance values, calculated from the GCD profiles (using eqn (S10)), are as follows: NM: 13.7 F g−1, Z-NM: 63.3 F g−1, V-NM: 140.4 F g−1, ZV-NM1: 351 F g−1, ZV-NM2: 807.2 F g−1, and ZV-NM3: 1423.1 F g−1 (316.24 mAh g−1).
GCD was also used to select the potential window for all four electrodes. The absence of distortion in these curves indicates that the operating voltage range of 0.8 V is suitable for the prepared electrodes, as shown in Fig. S7(a–d). Fig. 7(f) further explores the influence of current density on Cs for ZV-NM3. At low current densities, electrolyte ions have sufficient time to penetrate the electrode matrix, accessing abundant electrochemically active sites throughout the bulk and surface. This deep ion diffusion facilitates extensive redox activity, thereby maximizing charge storage. Conversely, at higher current densities, ion transport is confined to the outer surface due to time constraints, reducing Cs accordingly.73 Despite these changes, all four electrodes retained the shape of their GCD curves across varying current densities, demonstrating excellent reversibility and highlighting their pseudocapacitive characteristics in alignment with CV analyses. Additionally, the IR drop was minimal (0.005 V), even at elevated current densities, indicating low internal resistance and efficient energy retention.74 The optimal Zn/V doping concentration contributes to enhanced electrochemical performance through modified electronic conductivity and accelerated electron transit, which is well in line with structural and chemical characterization. Fig. 7(g) showcases cycle stability data following 10
000 charge/discharge cycles at 8 A g−1. Capacitance retention rates for NM, Z-NM, V-NM, and ZV-NM3 were 74%, 93.91%, 93%, and an impressive 100%, respectively. The decrease in NM performance is attributed to material dissolution and the inherent instability of NiMoO4, which suffers from mechanical stress and poor conductivity during repeated cycling. In contrast, ZV-NM3's robust stability is credited to its reduced band gap, enhanced ion mobility, and the dynamic redox behavior of Ni and V. Structurally, pristine NM adopts a monoclinic α-phase, where Ni and Mo occupy octahedral sites. Upon dual doping, Ni participates via its octahedral sites, while V contributes through both tetrahedral and octahedral sites, expanding redox possibilities and significantly boosting Cs. The higher density of active sites and optimal doping ratios further elevate the performance of ZV-NM3 above that of pristine and single-doped counterparts. The structural and chemical stability of the ZV-NM3/NF electrode before and after 10
000 GCD cycles was confirmed by FESEM, EDX, and XRD analyses. As depicted in Fig. S8(a and b), FESEM images show that the porous nanorod architecture is largely preserved after cycling, with only slight thickening and partial fusion of the rods, likely due to mild surface reconstruction during repeated redox processes. EDX mapping further verifies that the homogeneous distribution of Ni, Mo, O, Zn, and V remains unchanged, indicating the absence of elemental leaching or segregation. Consistently, the XRD patterns before and after cycling display the same α/β-NiMoO4 phase signatures without peak shifting, demonstrating that the crystal structure remains intact; only modest peak broadening is observed, reflecting minor surface relaxation rather than bulk degradation. In addition, EIS results support this stability, showing only a small increase in Rs (2.21 to 2.78 Ω); the non-appearance of the semicircle indicates a low interfacial Rct and a steeper low-frequency slope after cycling, suggesting improved ion transport due to electrode activation. These combined analyses confirm the excellent structural, chemical, and electrochemical durability of the Zn/V-doped NiMoO4 electrode during long-term operation. Fig. 7(h) provides a schematic of ion/electron transport in ZV-NM3 nanorods. The crystal structure facilitates strong ligand–metal interaction between O 2p orbitals and metal 2p and 3d orbitals, promoting reversible electronic transitions during charging and discharging. This dynamic bonding creates abundant redox-active sites, enhancing both pseudocapacitive behavior and electrochemical reaction rates (Table 1).
| Material | Electrolyte | Current density (A g−1) | C s (F g−1) | C s retention (%) with cycles | Ref. |
|---|---|---|---|---|---|
| NiMoO4/WO3/NF | 2 M KOH | 1 | 429.4 | 89.9% (10 000) |
75 |
| δ-MnO2/NiMoO4/NF | 6 M KOH | 1 | 1866.2 | 96.6% (5000) | 76 |
| NiMoO4@CNTs | 1 M KOH | 2 | 915.32 C g−1 | — | 77 |
| NiMoO4@Co(OH)2 | 2 M KOH | 1 | 1357 | 80.66% (5000) | 78 |
| NiMoO4 nanoflower | 1 M KOH | 1 | 947 | 94% (6000) | 79 |
| WO3/NiMoO4–120 | 2 M KOH | 1 | 875 | 90.48% (5000) | 80 |
| NiMoO4@Ni0.5Co-MOF/CC | 2 M KOH | 1 | 1210 | — | 20 |
| C@Co9S8/NiMoO4 | 0.6 M Na2SO4 | 1 | 986.3 | 74.9% (10 000) |
81 |
| MNM-160 | 2 M KOH | 0.5 | 1160.5 | 93.2% (5000) | 82 |
| ZV-NM3//NF | 3 M KOH | 0.4 | 1433 |
100% (10 000)
|
This work |
To explore the practical applicability of the ZV-NM3/NF electrode, hybrid asymmetric supercapacitor (ASC) devices were fabricated and systematically evaluated. These pouch-type devices employed ZV-NM3 as the positive electrode, a graphite sheet (GS) as the negative electrode, and a PVA/KOH gel electrolyte as the ion-conducting medium. A Whatman filter paper was used as a separator to prevent direct electrode contact. The overall architecture is illustrated in Fig. 8(a). In addition, FESEM analysis (Fig. S10) shows that the graphite sheet consists of overlapping graphite platelets with visible micro-voids and interlayer separations, indicating a porous and non-compact structure that facilitates ion access during charge/discharge processes. Moreover, the electrochemical performance of the negative electrode is also conducted for comparison in a three-electrode system, and the results are shown in Fig. S11.
Fig. 8(b) compares the CV profiles of ZV-NM3 and GS electrodes within their respective stable voltage windows of −0.2 to 0.6 V (ZV-NM3) and −1.0 to 0 V (GS) vs. Ag/AgCl, at a scan rate of 20 mV s−1. The assembled ZV-NM3/NF//GS device was optimized to operate within a broad potential window of 0.0 to 1.8 V (Fig. 8(c)), exhibiting minimal polarization. However, further expansion to 1.9 V triggers the onset of the oxygen evolution reaction (OER), characterized by gas bubble formation and a sharp rise in current density, which compromises device durability and ideal cell performance. Fig. 8(d) presents CV curves of the ZV-NM3/NF//GS ASC at sweep rates ranging from 3 to 50 mV s−1 within the 0.0–1.8 V window. Increasing sweep rates result in an expansion of the enclosed area, indicating excellent reversibility and predominant capacitive behavior. This confirms that ZV-NM3 paired with GS and PVA/KOH gel electrolyte offers robust charge/discharge dynamics. GCD measurements for the ZV-NM3/NF//GS ASC device (Fig. 8(e)) were performed at current densities from 0.3 to 1.4 A g−1, showing stable operation with a low IR drop across a wide voltage window (0.0–1.8 V). The distorted plateau observed in the GCD profile arises from the dual contribution of electrochemical double-layer capacitance (EDLC) from GS and faradaic processes from ZV-NM3. The highest stored SC of 101 F g−1 is achieved at a current density of 0.4 A g−1. In addition, when evaluating the performance of the device, it is crucial to consider the energy and power densities obtained using eqn (S8) and (S9). At a specific power of 1.31 kW kg−1, the as-designed flexible asymmetric supercapacitor device exhibits a maximum specific energy of 45.4 Wh kg−1. Long-term cycling stability was assessed over 10
000 cycles at 4 A g−1 (Fig. 8(f)), revealing a capacitance retention of 90.45% and a coulombic efficiency maintained at nearly 99%. This impressive durability is attributed to ZV-NM3's intrinsic low resistance and high density of active surface sites, which minimize inter-electrode resistance and preserve electrochemical integrity during prolonged cycling.83 Moreover, the electrochemical stability of the PVA/KOH gel electrolyte was evaluated by linear sweep voltammetry (LSV) in a three-electrode configuration versus Ag/AgCl (Fig. 8(g)). The current remained negligible up to ≈1.7 V, after which a sharp rise associated with water decomposition was observed, confirming an electrochemical stability window of about 1.7 V. The LSV curve of the solid-state supercapacitor (Fig. 8(h)) shows a nearly linear current response up to 1.8 V without any abrupt current increase, indicating the absence of electrolyte decomposition or side reactions. This confirms that the device can safely operate within the 0–1.8 V potential window. Electrochemical impedance spectroscopy (EIS) data before and after cycling in the frequency range of 0.01 Hz to 100 kHz, along with the equivalent circuit model, are presented in the inset of Fig. S11(a). As shown in Table 2, the series resistance (Rs) showed a slight increase from 18.54 to 20.45 Ω, indicating that the intrinsic conductivity was largely retained. The charge-transfer resistance (Rct) increased moderately by 12.5%, reflecting minor interfacial resistance growth during cycling. The double-layer capacitance (Q1) decreased by 18.1%, while the pseudocapacitive component (Q2) declined significantly, likely due to surface reconfiguration or partial loss of active sites. The Warburg impedance, typically observed as a sloped feature in the low-frequency region, reflects the diffusive resistance of OH− ions within the electrode system. The gradual change in slope can be attributed to reversible faradaic redox processes and the progressive insertion of OH− ions into the electrode material.84 After cycling, the Warburg resistance (W0R) increased, indicating higher diffusion impedance and more restricted ion transport. Meanwhile, the W0P exponent decreased slightly from 0.473 to 0.451, suggesting stronger finite-length diffusion effects, consistent with structural and ionic-transport changes induced during long-term cycling.85 These results confirm the electrode's strong structural integrity and stable electrochemical behavior under long-term operation.35,37
| Parameter | Initial value | Value after 10 000 cycles |
Unit |
|---|---|---|---|
| R s | 18.54 | 20.45 | Ω |
| R ct | 19.67 | 24.73 | Ω |
| Q 1 | 0.595 | 0.425 | mF cm−2 |
| Q 2 | 3.15 × 10−4 | 3.35 × 10−4 | mF cm−2 |
| W 0R | 108.42 | 281.5 | Ω s−1/2 |
| W 0P | 0.473 | 0.451 | — |
Additionally, flexibility is a crucial factor for portable and compact devices.86,87 To demonstrate the flexible properties of the prepared device, we tested its CV and GCD curves at various bending angles (0°, 90°, and 180°). The curves remained well-aligned across these angles, showing no significant changes in shape, which indicates the device's excellent flexibility (Fig. S12(b and c)). Fig. S12(d) shows the remarkable electrochemical and mechanical stability of the full supercapacitor device, maintaining 88.97% of its initial capacitance after 10
000 charge/discharge cycles while being subjected to an aggressive 180° bending angle. Collectively, these findings demonstrate that the ZV-NM3/NF//GS hybrid flexible device delivers robust pseudocapacitive behavior, excellent structural stability, prominent flexibility, and promising potential for advanced energy storage applications.
In addition, leakage current plays a crucial role in predicting energy loss in supercapacitors. To comprehensively evaluate both leakage current and self-discharge behaviors, solid-state asymmetric supercapacitors based on Zn, V co-doped NiMoO4 (ZV-NM3) were fabricated. The leakage current and self-discharge characteristics of the asymmetric devices were investigated under open-circuit conditions at room temperature. As shown in Fig. 9(a), the ZV-NM3/NF//GS device exhibited a low leakage current. The leakage current initially dropped sharply to 0.50 mA within the first 3 h, followed by a gradual decrease to 0.42 mA over the subsequent 21 h, indicating stable and low leakage behavior that favors voltage retention. This suggests that the device exhibits lower leakage current, which is beneficial for maintaining the stability of voltage holding.88 After charging to 1.8 V, the self-discharge process was monitored as a function of time for 24 h. The ZV-NM3/NF//GS device exhibited a potential decay from 1.8 V to 0.91 V within 24 h (Fig. 9(b)), indicating that it retained nearly half of its initial voltage over this period. The noticeable voltage drop is associated with the intrinsic self-discharge characteristics of high-voltage supercapacitors. It has been reported that an increase in charging voltage intensifies the self-discharge process due to a larger potential difference between the pore mouth and bottom, which enhances the ion concentration gradient within the electrode structure.89 This gradient promotes ion redistribution or desorption from the electrode surface, leading to a gradual potential decay over time. Therefore, the observed self-discharge behavior at 1.8 V is in good agreement with previously reported results and confirms the voltage-dependent nature of this phenomenon.90 These results demonstrate that the binary Zn, V co-doping strategy effectively minimizes energy loss in NiMoO4-based supercapacitors and broadens their potential for practical applications in next-generation energy storage systems.
000 cycles). These enhancements are attributed to synergistic effects between Zn and V dopants, which modulate the local electronic environment, increases the number of redox-active sites, and facilitate rapid ion diffusion and charge transfer. Furthermore, an asymmetric supercapacitor (ZV-NM3/NF//GS) demonstrated a high working voltage of 1.8 V, delivering an impressive energy density of 45.4 Wh kg−1 and a power density of 1.31 kW kg−1, along with excellent rate capability and 90.45% capacitance retention after prolonged cycling. These results establish ZV-NM3 as a promising electrode material for next-generation energy storage devices and provide valuable insights into the design of advanced transition metal oxide-based pseudocapacitors through strategic co-doping approaches.
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