Open Access Article
Anoop C Sathyadevan Nair
a,
K. P. Adarsh Raja,
Muneendra Dasannagarib,
Abhijith T
cd,
Abhishek Melarkode Rajendrana,
Dipangkor Basumatary
a,
Safakath Karuthedath
*b,
C. S. Suchand Sangeeth
*a and
Vari Sivaji Reddy
*a
aDepartment of Physics, National Institute of Technology Calicut (NITC), Kerala – 673601, India. E-mail: sivaji@nitc.ac.in
bInstitute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen – 518055, China
cDepartment of Physics, PSG Institute of Technology and Applied Research, Neelambur, Coimbatore, Tamil Nadu – 641062, India
dDepartment of Nanoscience and Technology, PSG Institute of Advanced Studies, Peelamedu, Coimbatore, Tamil Nadu – 641004, India
First published on 10th March 2026
Fine-tuning the photophysical properties and nanoscale morphology of the photoactive layer by incorporating an additional donor or acceptor is a promising strategy for improving the performance of organic solar cells (OSCs). Here, we strategically incorporated a wide-bandgap donor (PBDB-T) into the PTB7-Th:COi8DFIC-based host binary to attain a relatively high power conversion efficiency (PCE). The complementary absorption spectra of these materials enabled the harvesting of solar spectrum in a wide wavelength range of 400 nm to 1000 nm. An efficient energy transfer from PBDB-T to PTB7-Th was confirmed by steady-state and time-resolved photoluminescence measurements. The introduction of PBDB-T resulted in an optimized active layer morphology, thereby markedly improving the exciton-dissociation and charge-collection efficiencies, leading to the improvement of the short-circuit current density (JSC) and fill factor (FF). As a result, ternary OSCs fabricated with 20 wt% PBDB-T exhibited an average efficiency of 9.74%, compared to 8.87% in the host binary. Impedance spectroscopy analysis at various bias voltages within the operating regime revealed a reduction in the bulk resistance and an increase in the recombination resistance for the optimized ternary OSC, validating the observed enhancements in JSC and FF. Furthermore, transient photovoltage and photocurrent measurements revealed a long carrier lifetime of 22.30 µs and a short extraction time of 904 ns in the ternary system, which were beneficial for the OSC performance. In addition, the incorporation of PBDB-T resulted in reduced non-radiative recombination in the device through efficient energy transfer. The role of PBDB-T in improving the performance of the PTB7-Th:COi8DFIC-based host binary was investigated through systematic photophysical, morphological and electrical characterizations.
Ternary OSC architecture, which uses a blend of three materials (D1:D2:A or D:A1:A2), with complementary absorption spectra as the active layer, has been introduced as an alternative to the tandem architecture for harvesting photons in a broad wavelength range.16–19 Along with broad range absorption, the ternary OSCs are often benefitted by additional charge transfer, energy transfer, parallel linkage and alloy mechanisms.20–23 Recently, a power conversion efficiency (PCE) above 20% has been achieved using the ternary strategy.24–27 Selecting a suitable third component is of great importance in ternary OSCs, as it can significantly affect the nanoscale morphology of the blend, which in turn directly influences the performance of OSCs.
In the present study, we have selected a less explored PTB7-Th:COi8DFIC blend as the host binary. COi8DFIC is an A-D-A type molecule with eight fused rings in the D domain and two difluoro-substituted end groups in the A domains, often blended with PTB7-Th in OSCs due to proper energy level alignment, favorable phase separation and optimal nano-scale morphology.28–32 Moreover, COi8DFIC exhibits one of the longest reported exciton diffusion lengths (≈40 nm) to date, which is suitable for efficient exciton dissociation.33 These properties make COi8DFIC a promising candidate for high-performance OSC applications. Various strategies have been employed to improve the performance of PTB7-Th:COi8DFIC-based OSCs. Zhang et al. used 0.5 vol% of 1,8-diiodooctane as the solvent additive, which interacted with the side chains of COi8DFIC to enhance the formation of A-D-type J aggregates in the blend.31 The significant red shift of the absorption spectrum towards the near-infrared region has resulted in a substantial improvement in the PCE. Li et al. achieved a PCE of 13.4% by employing the hot substrate casting method to simultaneously form H and J aggregates of COi8DFIC, which spread the absorption spectrum towards both low and high wavelengths.30 Ternary bulk-heterojunction strategy has also been explored to improve the performance of PTB7-Th:COi8DFIC-based OSCs by adding IEICO-4F, ITIC-4F and PC70BM as the third component into the host binary.34–37 Both IEICO-4F and ITIC-4F absorb in the high wavelength region. Even though PC70BM absorbs in the low wavelength region, its contribution to the light harvesting in OSCs is limited due to relatively modest optical absorption.38 Therefore, the addition of a wide bandgap material with strong absorption into PTB7-Th:COi8DFIC seems to be a promising method for harvesting high-energy photons.
Here, we select a wide bandgap polymer (PBDB-T) as the third component. The good compatibility between PBDB-T and the host donor (PTB7-Th), together with the complementary absorption ranges of the ternary components, is expected to provide favorable morphological properties and enhanced spectral coverage. Inverted OSCs are fabricated with PBDB-T:PTB7-Th:COi8DFIC as the active layer, and the weight percent of PBDB-T in the blend is optimized to achieve the best performance. The optimum ternary OSC with 20 wt% PBDB-T exhibited an average efficiency of 9.74%, compared to 8.87% for the PTB7-Th:COi8DFIC host binary. The transient photocurrent (TPC) measurement on the optimized devices reveals that the carrier extraction time for the ternary device is reduced to 904 ns, compared to 1019 ns for the host binary device. Correspondingly, the carrier lifetime (obtained from the transient photovoltage (TPV) experiments) in the ternary device is improved to approximately 22.30 µs, which is more than three times that of the host binary (≈6.35 µs). Based on various photophysical, morphological and electrical characterizations, the performance enhancement mechanism has been thoroughly investigated.
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| Fig. 1 (a) Chemical structures of PBDB-T, PTB7-Th and COi8DFIC and (b) normalized UV-vis absorption spectra of the PBDB-T, PTB7-Th and COi8DFIC neat films. | ||
To explore the photovoltaic performance of the proposed ternary combination, OSCs were fabricated with the following device structure: ITO/ZnO/PBDB-T:PTB7-Th:COi8DFIC/MoO3/Ag, as depicted in Fig. 2(a). The weight ratio of PBDB-T was varied from 0% to 100% in order to optimize the device performance. The UV-vis absorption spectra of ternary blend films with different D1:D2 weight ratios (0:1, 0.2:0.8, 0.8:0.2, and 1:0) are shown in Fig. 2(b). Fig. S1 presents the spectra for all tested D1:D2 weight ratios. As expected, the introduction of PBDB-T improved the absorption at low wavelengths, allowing high-energy photons to contribute more efficiently to exciton generation. Moreover, no change in the absorption peak position of COi8DFIC was observed due to the presence of PBDB-T (Fig. 2(b)), indicating no effect of PBDB-T on COi8DFIC aggregation. Fig. 2(c) represents the J–V curves of OSCs fabricated with different D1:D2 weight ratios. The corresponding photovoltaic parameters are presented in Table 1. The host binary consisting of PTB7-Th:COi8DFIC exhibited an average PCE of 8.87% with a JSC of 19.86 mA cm−2, a VOC of 0.721 V and an FF of 61.93%. The addition of 20 wt% PBDB-T in the donor resulted in the highest PCE of 9.74% with a JSC of 21.36 mA cm−2, a VOC of 0.726 V and an FF of 62.80%. Further increase in the PBDB-T content resulted in a steady reduction in PCE (Fig. S2 and Table S1). As shown in Table 1, OSCs with 80% PBDB-T showed an average PCE of 8.15%. Following the same trend, PBDB-T-based binary showed a poor PCE of 6.81%, mainly due to a relatively low FF of 52.91%. This could be attributed to the incompatible blend of PBDB-T and COi8DFIC, leading to inadequate charge transport. Moreover, the box plot of the PCE shown in Fig. S3 confirms the reproducibility of the experimental results. In order to study the spectral response of the devices, EQE measurements were carried out, and the spectra are presented in Fig. 2(d). The optimum ternary device with 20 wt% PBDB-T in the donor exhibited superior quantum efficiency, reaching 70% at 850 nm. Additionally, the maximum EQE of all the devices was found to be around 850 nm due to the high amount of COi8DFIC in the blend. It also indicated efficient hole transfer from COi8DFIC to the donors, especially to PTB7-Th, as evident from the FF values. The low EQE values observed for the PBDB-T:COi8DFIC binary device in the absorption range of PBDB-T indicated the poor exciton dissociation and charge transport in the blend compared to those of the ternary devices.
| PBDB-T:PTB7:COi8DFIC | JSC (mA cm−2) | VOC (V) | FF (%) | PCE (%) | |
|---|---|---|---|---|---|
| Average | Best | ||||
| 0:1:1.5 | 19.86 ± 0.67 | 0.721 ± 0.003 | 61.93 ± 1.81 | 8.87 ± 0.24 | 9.16 |
| 0.2:0.8:1.5 | 21.36 ± 0.36 | 0.726 ± 0.004 | 62.80 ± 0.48 | 9.74 ± 0.17 | 9.98 |
| 0.8:0.2:1.5 | 20.05 ± 0.43 | 0.721 ± 0.006 | 56.31 ± 1.11 | 8.15 ± 0.15 | 8.34 |
| 1:0:1.5 | 18.15 ± 0.37 | 0.708 ± 0.006 | 52.91 ± 1.04 | 6.81 ± 0.13 | 7.06 |
To investigate the possibility of energy transfer from the wide-bandgap PBDB-T to the medium-bandgap PTB7-Th, steady-state PL measurements were performed. As shown in Fig. 3(a), the absorption spectrum of PTB7-Th strongly overlaps with the emission spectrum of PBDB-T, indicating possible energy transfer from PBDB-T to PTB7-Th.40,41 To understand the energy transfer mechanism in more detail, the PL measurements were carried out on D1:D2 blend films with various weight ratios. The solutions were prepared at a concentration of 10 mg mL−1 and spun at 1000 rpm to ensure equal thickness for all the samples. For PL measurements, samples were excited at a wavelength of 620 nm, which was closer to the absorption maximum of PBDB-T (623 nm), and the PL spectra of the films are shown in Fig. 3(b). The emissions of pristine PBDB-T and PTB7-Th films were found to be in the ranges of 625–850 nm and 700–875 nm, respectively. The emission intensity of pristine PTB7-Th was only half of that of pristine PBDB-T, indicating less absorption by PTB7-Th. When a small amount of PTB7-Th was added to PBDB-T, significant quenching in the emission intensity of PBDB-T with a simultaneous increase in the emission intensity of PTB7-Th was observed, confirming energy transfer from PBDB-T to PTB7-Th.42 Moreover, it was noted that the maximum emission intensity of PTB7-Th in the blend film was observed for the sample containing 20% PTB7-Th and 80% PBDB-T. As the fraction of PTB7-Th increased in the blend, the emission intensity of PTB7-Th was consistently reduced. These results clearly indicated that the major portion of the PTB7-Th emission in the blend was contributed by energy transfer from PBDB-T.
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| Fig. 3 (a) Normalized UV-vis absorption spectrum of PTB7-Th and the normalized PL spectrum of the PBDB-T film. (b) PL spectra of the PBDB-T:PTB7-Th blend films with various weight ratios. | ||
The cascade energy level alignment between the components of the ternary blend hinted at the possibility of exciton dissociation at the PBDB-T/PTB7-Th interface. To get more insight into the charge/energy transfer mechanisms, time-resolved photoluminescence (TRPL) measurements were carried out. Fig. S5 shows the normalized PL spectra of the PBDB-T and PTB7-Th thin films with emission peaks at 725 and 770 nm, respectively. The TRPL spectra of the pristine PBDB-T and PTB7-Th films monitored at 725 and 770 nm, respectively, are presented in Fig. 4(a). The decay curves were fitted using the bi-exponential model, A + B1e−t/τ1+ B2e−t/τ2, where A is the offset correction term representing the ambient light and instrumental noise.43 The average lifetime was calculated using the following equation:
![]() | (1) |
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| Fig. 4 TRPL spectra of (a) PBDB-T and PTB7-Th, and (b) PBDB-T:PTB7-Th thin films monitored at 725 and 770 nm. All the samples were excited at 630 nm. | ||
The PBDB-T exhibited an average lifetime of 288 ps at 725 nm, whereas the lifetime of PTB7-Th was found to be 131 ps at 770 nm. As presented in Fig. 4(b), after adding 20% PBDB-T into the donor, the lifetime of PBDB-T drastically reduced to 88 ps, while the lifetime of PTB7-Th in the blend increased to 136 ps, indicating an efficient energy transfer from PBDB-T to PTB7-Th.44–46 The efficiency of energy transfer from PBDB-T to PTB7-Th was calculated using the following equation:
![]() | (2) |
Both PBDB-T and PTB7-Th consist of a benzodithiophene group in their backbones, hinting at possible alloy formation between the donors. To verify this possibility, contact angle measurements were carried out on pristine PBDB-T and PTB7-Th thin films. Water and ethylene glycol (EG) with known surface energy values and different polarities on the film surface were used to obtain accurate surface energy values.49,50 The images of droplets are presented in Fig. S7. PBDB-T exhibited a water contact angle of 95.58° ± 0.62°, whereas PTB7-Th exhibited a slightly higher value of 101.59° ± 0.71°. On the other hand, both PBDB-T and PTB7-Th showed relatively low EG contact angles of 80.60° ± 0.39° and 74.76° ± 0.77°, respectively. The surface energy of the materials was calculated using the harmonic mean formula presented in the supplementary information. PBDB-T exhibited a surface energy of 27.76 m Nm−1, with a polar component of 1.38 m Nm−1 and a dispersive component of 26.38 m Nm−1. Similarly, the surface energy of PTB7-Th was found to be 24.36 m Nm−1, with a polar component of 4.53 m Nm−1 and a dispersive component of 19.84 m Nm−1. The interfacial energy between the donors was calculated by Wu's method:51
![]() | (3) |
From these analyses, we concluded that energy transfer was the main mechanism responsible for performance enhancement. The working of ternary OSC are schematically presented in Fig. 5. The excitons in both PBDB-T and PTB7-Th dissociated at their respective interfaces with COi8DFIC. The electrons were collected at the cathode through the COi8DFIC channel, and the holes preferred to take the individual D1 or D2 channel to the anode. Even though the hole transport from PTB7-Th to PBDB-T was energetically feasible, the small amount of PBDB-T in the blend made it less probable (indicated by the dashed red arrow in the schematic).
To understand the effect of PBDB-T on the morphology of the active layer blend, AFM analysis was carried out, and the results are presented in Fig. 6. Fig. 6 (a–d) shows the topography images of the active layer films at various D1:D2 ratios. The PTB7-Th:COi8DFIC binary film exhibited an average roughness of 5.61 nm. The addition of 20% PBDB-T into the host binary improved the morphology of the ternary blend by showing a reduced surface roughness value of 4.20 nm. A smooth surface was beneficial for facilitating the charge transport from the active layer to the electrodes by minimizing the recombination.54 Further increase in the PBDB-T content to 80% resulted in an average roughness of 5.13 nm. This could be attributed to the self-aggregation of PBDB-T at room temperature, which was clearly observed from the high roughness value of 5.96 nm in the PBDB-T:COi8DFIC blend.55 The phase images corresponding to various D1:D2 ratios are presented in Fig. 6 (e–h). Compared to the PTB7-Th:COi8DFIC binary, the ternary blend with 20% PBDB-T exhibited domains suitable for efficient charge transport to the electrodes. As illustrated in Fig. 6(g) and (h), an increase in the PBDB-T content results in the formation of large domains within the active layer blend, which is inadequate for efficient exciton dissociation. The AFM analysis indicated that the inclusion of PTB7-Th in the blend modulated the molecular arrangement of PBDB-T, thereby enhancing the charge transport in the ternary OSC.
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| Fig. 6 AFM topography (a–d) and phase (e–h) images of the active layer films corresponding to various PBDB-T:PTB7-Th weight ratios: 0:1, 0.2:0.8, 0.8:0.2, and 1:0. | ||
To gain more insight into the role of PBDB-T on the exciton generation and charge extraction in ternary OSCs, photocurrent density (Jph) versus effective voltage (Veff) analysis was carried out, and the results are presented in Fig. 7(a). Here, Jph is defined as JL – JD, where JL is the current density under 1 sun illumination, and JD is the current density under dark conditions. Veff is given by V0 – Va, where V0 is the voltage at which Jph becomes zero, and Va is the applied voltage.56 At Veff > 2 V, the high internal field dissociated the excitons into free charge carriers, which were collected at respective electrodes, providing a saturation current density (Jsat). Among all the devices, the optimized ternary OSC exhibited the highest Jsat value of 23.45 mA cm−2 (Table 2) due to enhanced absorption in the active layer blend. The improved FF value observed in the optimized ternary OSC was directly related to the charge transport properties. In order to explore this, exciton dissociation (ηdiss) and charge collection (ηcc) efficiencies were calculated from the Jph – Veff curves and are presented in Table 2. ηdiss is defined as Jph/Jsat under short-circuit conditions, and ηcc is defined as Jph/Jsat under the maximum power output condition. The PTB7-Th:COi8DFIC-based binary OSC exhibited an ηdiss value of 90.77%, which improved to 92.92% in the case of optimized ternary OSC with 20% PBDB-T content. The fine D/A phase separation observed from the AFM images substantiated this observation, since the excitons formed in the donor (or acceptor) were dissociated within their exciton dissociation lengths before recombination. As the PBDB-T content increased to 80%, the ηdiss reduced to 89.85%. Among all the devices, the lowest ηdiss was observed for the PBDB-T:COi8DFIC-based binary OSC, which was attributed to the inadequate phase separation in the active layer blend, as observed from the AFM analysis. A similar trend was observed in the charge collection, with the optimized ternary exhibiting the highest ηcc value of 75.1%, followed by the PTB7-Th:COi8DFIC-based binary (73.5%), ternary OSC containing 80% PBDB-T (72.21%) and PBDB-T:COi8DFIC-based binary (62.9%). These results indicated that the incorporation of a small amount of PBDB-T into the host blend improved the charge transport properties of the ternary OSCs, thereby enhancing the PCE.
| PBDB-T:PTB7-Th:COi8DFIC | Jph#(mA cm−2) | (mA cm−2) | Jsat (mA cm−2) | ηdiss (%) | ηcc (%) |
|---|---|---|---|---|---|
a Jph#: Photocurrent density at the short circuit condition.b : Photocurrent density at the maximum power point condition.c Jsat: Photocurrent density at the saturation point. |
|||||
| 0:1:1.5 | 20.38 | 16.50 | 22.45 | 90.77 | 73.50 |
| 0.2:0.8:1.5 | 21.79 | 17.61 | 23.45 | 92.92 | 75.1 |
| 0.8:0.2:1.5 | 19.76 | 15.88 | 21.99 | 89.85 | 72.21 |
| 1:0:1.5 | 17.84 | 13.24 | 21.04 | 84.5 | 62.9 |
The improvement in PCE of the PTB7-Th:COi8DFIC binary OSC upon the addition of PBDB-T was due to the enhancement of JSC and FF, which were directly related to the charge transport and recombination processes in the device. Impedance spectroscopy (IS) analysis is considered a powerful and non-destructive technique to probe various electrical processes in OSCs. In order to get a clear picture of the dynamics of photo-generated charge carriers within the operating regime (0–VOC), the IS measurements were carried out at various bias voltages under 1 sun illumination. The Nyquist plots of the PTB7-Th:COi8DFIC binary, PBDB-T:PTB7-Th:COi8DFIC ternary and PBDB-T:COi8DFIC binary OSCs are presented in Fig. 7 (b–d), respectively. All the Nyquist plots were fitted with the Matryoshka or ladder-type equivalent circuit, which is shown in the inset of Fig. 7(c).57,58 The high-frequency region in the Nyquist plot represents charge transport properties, whereas the low-frequency region characterizes various recombination processes present in the device.59 The bulk (Rbulk) and recombination (Rrec) resistances, which provide a deeper understanding of charge transport and recombination processes in OSCs, were obtained by fitting the Nyquist plots. The variation of Rbulk and Rrec with the bias voltage is shown in Fig. 8(a) and (b), respectively. A relatively high Rbulk indicates reduced charge transport, whereas a relatively high Rrec means low recombination in the device. From Fig. 8(a) and (b), it is clear that the optimum ternary OSC exhibits lower Rbulk and higher Rrec compared to the two binary devices, indicating efficient charge transport. In order to get a clear picture, the Rbulk and Rrec of individual devices are compared in Fig. S8. For the PBDB-T:COi8DFIC binary, the Rbulk was more than the Rrec at all bias voltages, which substantiated the observed low FF values. For both the PTB7-Th:COi8DFIC-based binary and optimum ternary, Rrec was found to be higher than Rbulk, with the ternary showing a large difference between the two resistances, indicating efficient charge transport. Furthermore, Xu et al. reported that the FF in OSC can be directly correlated to (Rrec/Rbulk)1/2 value.60 At 0 V, the PTB7-Th:COi8DFIC-based binary exhibited a (Rrec/Rbulk)1/2 value of 1.07, which increased to 1.61 for the ternary device, validating the improvement in the FF values for the ternary OSC.
To further understand the consequence of the increased Rrec and reduced Rbulk observed for the optimal ternary OSC on the charge extraction and charge carrier lifetimes, TPC and TPV measurements were employed.61 TPC and TPV rely on the measurement of photocurrent and photovoltage response, respectively, to a small light perturbation superimposed on a constant bias light.62,63 The carrier generation is considered effectively instantaneous.64,65 However, the perturbation pulse width was chosen so that the device reached steady state before the perturbation was turned off. As a result, the subsequent decay isolates charge extraction (photocurrent) or recombination (photovoltage) processes at various timescales, depending on the external bias of the device.66–68 During TPC measurement, the device was held under short-circuit conditions, and the resulting decay profile provided information about the charge extraction lifetime. In the TPV measurements, the device was kept under open-circuit conditions to determine the charge-carrier lifetimes.69,70 The TPC and TPV decay profiles of the PTB7-Th:COi8DFIC, PBDB-T:COi8DFIC binary and PBDBT:PTB7-Th:COi8DFIC (0.2:0.8:1.5) ternary devices are presented in Fig. 8(c) and (d), respectively. The TPC decay profiles for a background light with 0.1 sun intensity were used to extract the charge carrier lifetimes (see the SI). The results revealed that the ternary system had a faster carrier extraction time of τternary = 904 ± 16 ns than the control binary (τPTB7-Th, binary = 1019 ± 21 ns). On the other hand, the PBDB-T:COi8DFIC-based binary device exhibited a relatively poor extraction time of 1561 ± 28 ns. The quick carrier extraction observed in the optimal ternary device indicated reduced charge carrier resistance, substantiating the observed improvement in the FF and the JSC.71 From the TPV curves displayed in Fig. 8(d), the charge carrier lifetime of the PTB7-Th:COi8DFIC-based host binary was found to increase from 6.35 ± 0.10 µs to 22.30 ± 0.30 µs upon the addition of 20 wt% PBDB-T. However, the PBDB-T:COi8DFIC-based binary showed the lowest charge carrier lifetime (τPBDB-T, binary = 5.64 ± 0.12 µs), thereby validating the high bulk and low recombination resistances obtained from impedance analysis. The improved charge carrier lifetime observed for the optimum ternary device indicated reduced recombination losses. Hence the increase in the charge carrier lifetime, along with a short extraction time, helped the ternary OSC to reduce its recombination losses to enhance FF and JSC, thereby improving the PCE.
In order to understand the causal relationship between recombination, charge transport and the proposed energy transfer mechanism, a qualitative voltage-loss analysis was performed. The total voltage loss in a solar cell is represented as ΔV = ΔV1 + ΔV2 + ΔV3, where
, which is the radiative loss above the optical bandgap, and it is the fundamental loss in all solar cells. Here, Eg is the optical bandgap, q is the elementary charge and Voc, SQ is the maximum open-circuit voltage that a solar cell can achieve, as predicted by Shockley and Queisser. ΔV2 = Voc, SQ−Voc, rad represents the radiative recombination below the optical bandgap. ΔV3 quantifies the non-radiative recombination loss in a solar cell, and it is defined as ΔV3 = Voc,rad−Voc.72 As shown in Table 3, ΔV1 (∼0.26 V) and ΔV2 (∼0.08 V) remain nearly unchanged for all devices, indicating that the optical gap and radiative recombination processes are not significantly influenced by the addition of PBDB-T. In contrast, a considerable change in ΔV3 was observed across the devices. Compared to the PTB7-Th:COi8DFIC-based host binary with a ΔV3 value of 0.307 V, the optimum ternary exhibited a relatively low ΔV3 value of 0.303 V. The reduced ΔV3 provided direct quantitative evidence that FRET suppresses non-radiative recombination by facilitating rapid exciton energy transfer prior to thermal relaxation and trap-assisted decay. This reduction in the non-radiative recombination is consistent with the decreased bulk resistance and prolonged carrier lifetime observed in impedance spectroscopy and transient measurements. The present study reports the utilization of a wide bandgap polymer donor for the efficiency enhancement of the PTB7-Th:COi8DFIC-based OSCs. In addition to high efficiency, long-term stability and scalability play a crucial role in the commercialization of OSCs. The variation of the efficiency with the active-layer thickness and the device area and the effect of illumination and thermal exposure on the long-term stability need to be thoroughly investigated.
| PBDB-T:PTB7-Th:COi8DFIC | Eg (eV) | VOC (V) | VOC,SQ (V) | VOC,rad (V)< | ΔV1 (V) | ΔV1 (V) | ΔV1 (V) |
|---|---|---|---|---|---|---|---|
| 0:1:1.5 | 1.368 | 0.721 | 1.108 | 1.028 | 0.260 | 0.079 | 0.307 |
| 0.2:0.8:1.5 | 1.366 | 0.726 | 1.106 | 1.029 | 0.260 | 0.077 | 0.303 |
| 0.8:0.2:1.5 | 1.363 | 0.721 | 1.103 | 1.025 | 0.260 | 0.079 | 0.304 |
| 1:0:1.5 | 1.365 | 0.708 | 1.105 | 1.026 | 0.260 | 0.078 | 0.318 |
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