Bernadette C.
Ortner
ab,
Konrad
Binter
b,
Julia
Hönigsberger
b,
Stefano
Favero Costa
c,
Georg
Haberfehlner
a,
Gerald
Kothleitner
ad,
Heinz
Amenitsch
e,
Thomas
Rath
b,
Markus C.
Scharber
c and
Gregor
Trimmel
*b
aInstitute of Electron Microscopy and Nanoanalysis, NAWI Graz, Graz University of Technology, Steyrergasse 17, 8010, Graz, Austria
bInstitute for Chemistry and Technology of Materials (ICTM), NAWI Graz, Graz University of Technology, Stremayrgasse 9, 8010, Graz, Austria. E-mail: gregor.trimmel@tugraz.at
cLinz Institute for Organic Solar Cells (LIOS), Institute of Physical Chemistry, Johannes Kepler University Linz, Altenbergerstrasse 69, 4040 Linz, Austria
dGraz Centre for Electron Microscopy, Steyrergasse 17, Graz, 8010, Austria
eInstitute of Inorganic Chemistry, NAWI Graz, Graz University of Technology, Stremayrgasse 9, 8010 Graz, Austria
First published on 21st August 2025
The increased interest in tandem solar cells and semitransparent building-integrated photovoltaics raises the need for organic solar cells with enhanced visible light transmittance. Reducing the donor content successfully enhances semitransparency in the visible wavelength range, however, it can introduce issues in charge carrier separation and transport. We address this key issue and concentrate on a detailed investigation of the nanomorphology of D18:L8-BO bulk heterojunctions with reduced donor content to provide new insights into the morphological changes and their impact on device performance. Scanning transmission electron microscopy combined with electron energy loss spectroscopy based elemental ratio mapping provides good contrast between the donor and acceptor domains and we observed that the donor phase forms a well interconnected network, which surprisingly persists even at low donor contents down to 2%. Investigations of the solar cell characteristics align with these findings and reveal that despite a significant reduction of the donor, the fundamental device physics remains largely unaffected. Rather than changes in charge carrier mobility or exciton dissociation, we identify charge carrier collection and a significant reduction in shunt resistance as critical loss factors that have been previously underestimated. A thorough understanding of these changes will contribute to optimizing donor-diluted organic solar cells for semitransparent applications.
However, questions arise regarding the influence of donor dilution on the fundamental device physics, mode of operation, and power conversion efficiency. Unbalanced phase morphology, a reduced interface and, in the extreme case, the loss of percolation paths within the donor phase are consequences of this donor diluting approach. Exciton dissociation primarily occurs at the donor:acceptor (D:A) interface due to the energy level offset, therefore a reduced interfacial area results in less exciton dissociation and hampers the generation of free charge carriers.8 The network formation typically witnessed for the donor material D18 is beneficial for both, exciton dissociation and charge transport. Such networks are also found in other bulk heterojunction (BHJ) absorber layers (e.g. PM6:L8-BO, D18:L8-ThCl) and their investigation is mainly based on grazing-incidence wide-angle X-ray scattering (GIWAXS), atomic force microscopy (AFM) and transmission electron microscopy (TEM) in combination with electron diffraction techniques.9–11 In previous work, it was shown that electron energy loss spectroscopy (EELS) enables efficient visualization of D:A separation in the bulk without crystallinity dependence, thereby enhancing the illustration of defined network structures.12–15 These structures will be investigated more closely in this study focusing on changes resulting from gradual donor reduction in the D18:L8-BO system. D18:L8-BO is currently among the most efficient and thoroughly investigated material combinations that form network structures. To obtain a comprehensive understanding on the impact of the D:
A ratios, this study investigates six weight ratios between 1
:
1.5 to 1
:
100. We correlate changes in the D:A network to photovoltaic parameters, absorption and EQE spectra, GIWAXS data, charge carrier mobility, Jph–Veff characteristics, light intensity dependence, and luminescence data. A particular focus is thereby set on elucidating how a systematic reduction of the donor fraction alters the underlying device physics.
Ratios | V OC [V] | J SC [mA cm−2] | FF | PCE [%] | J SC/Jsat | J MPP/Jsat | μ e [cm2 V−1 s−1] | μ h [cm2 V−1 s−1] |
---|---|---|---|---|---|---|---|---|
1![]() ![]() |
0.90(0.89 ± 0.02) | 24.8(24.4 ± 0.5) | 0.73(0.72 ± 0.02) | 16.4(15.8 ± 0.4) | 0.97 ± 0.02 | 0.83 ± 0.07 | 9.63 × 10−4 ± 2.14 × 10−4 | 4.98 × 10−5 ± 2.69 × 10−5 |
1![]() ![]() |
0.91(0.90 ± 0.01) | 17.2(16.1 ± 0.6) | 0.72(0.63 ± 0.02) | 11.3(9.2 ± 2.1) | 0.96 ± 0.01 | 0.83 ± 0.01 | 2.62 × 10−3 ± 3.32 × 10−4 | 1.45 × 10−4 ± 4.30 × 10−5 |
1![]() ![]() |
0.91(0.90 ± 0.01) | 15.9(15.1 ± 0.5) | 0.69(0.69 ± 0.01) | 10.0(8.8 ± 0.4) | 0.89 ± 0.01 | 0.70 ± 0.03 | 2.67 × 10−3 ± 4.78 × 10−4 | 6.43 × 10−5 ± 2.45 × 10−5 |
1![]() ![]() |
0.90(0.90 ± 0.01) | 12.2(11.9 ± 0.3) | 0.69(0.59 ± 0.02) | 7.6(7.5 ± 0.3) | 0.89 ± 0.01 | 0.62 ± 0.09 | 5.25 × 10−4 ± 4.65 × 10−4 | 5.66 × 10−5 ± 2.93 × 10−5 |
1![]() ![]() |
0.88(0.87 ± 0.03) | 6.77(6.44 ± 0.2) | 0.46(0.44 ± 0.06) | 2.7(2.5 ± 0.4) | 0.54 ± 0.05 | 0.36 ± 0.03 | 7.50 × 10−4 ± 4.41 × 10−4 | 9.09 × 10−5 ± 4.48 × 10−5 |
1![]() ![]() |
0.88(0.87 ± 0.01) | 3.49(3.33 ± 0.17) | 0.45(0.43 ± 0.03) | 1.4(1.2 ± 0.2) | 0.43 ± 0.02 | 0.19 ± 0.01 | 6.57 × 10−4 ± 1.35 × 10−4 | 7.03 × 10−5 ± 5.99 × 10−5 |
1![]() ![]() |
0.66(0.70 ± 0.14) | 0.12(0.08 ± 0.03) | 0.31(0.30 ± 0.01) | 0.02(0.02 ± 0.01) | — | — | 2.04 × 10−6 ± 3.15 × 10−6 | 7.12 × 10−5 ± 1.02 × 10−4 |
0![]() ![]() |
0.09(0.04 ± 0.03) | 0.04(0.03 ± 0.007) | 0.27(0.25 ± 0.02) | 1.0 × 10−3(3.8 × 10−4 ± 3.7 × 10−4) | — | — | 1.22 × 10−3 ± 2.46 × 10−4 | 7.67 × 10−5 ± 2.87 × 10−5 |
According to Fig. 1c, the fill factor (FF) has a high tolerance to donor reduction across D:
A weight ratios from 1
:
1.5 to 1
:
10 followed by a marked decline at ratios of 1
:
50 and 1
:
100. The open circuit voltage (VOC) shows stable behavior over all investigated ratios, however, the ratio alteration provides notable impact on the short circuit current densities (JSC). The JSC values steadily decrease with reduced donor content, from 24.4 mA cm−2 (1
:
1.5) to 11.9 mA cm−2 (1
:
10) and 3.33 mA cm−2 (1
:
100). Despite a significant reduction of the donor content from 40% (1
:
1.5) to 9% (1
:
10), it is interesting to note that only a performance decline of about 50% is observed (15.8% to 7.5%). A similar correlation between solar cell performance and donor content was observed for the PM6:Y6 combination by Zhang et al.16
Significant variations depending on donor content alteration are observed in the absorption spectra shown in Fig. 1e. This graph demonstrates a substantial decline in the absorption of the visible range with decreasing donor content. The donor absorption peak maxima located between 570 and 600 nm are significantly decreasing with reduced donor content in comparison to the L8-BO absorption peak maxima located between 790 and 820 nm. For the 1:
50 and 1
:
100 ratios, no significant changes are visible in the donor absorption region. However, depending on the processing conditions, absorption spectra of these two ratios can reveal a distinct redshift of the acceptor absorption maxima from 800 nm to 817 nm as shown in Fig. S1a. This indicates a more pronounced crystallinity of the acceptor in these films compared to layers with a higher donor content and thereby possibly also a significantly changed D:A network formation.
For the J–V curves of the devices with 1:
50 and 1
:
100 D
:
A ratios, in addition to a reduced photocurrent also the photovoltage and in particular the FF are significantly reduced, which demonstrates the competition between recombination and extraction of charge carriers.17 Obviously, the series resistance (Rseries) is also much higher for solar cells with these two ratios (1
:
50 and 1
:
100) and even more for those with the pure donor or acceptor. The Rseries values are increasing from 1.7 Ω cm2 (1
:
1.5) to 2.1 (1
:
4), 2.5 (1
:
8), 2.6 (1
:
10), 8.2 (1
:
50), 12.0 (1
:
100), 1990 (0
:
1) to 2960 Ω cm2 (1
:
0). For more balanced D
:
A ratios (1
:
1.5, 1
:
4, 1
:
8 and 1
:
10), we believe that sufficiently efficient charge transport enables higher FFs and therefore decent efficiencies despite the significantly reduced donor content.
To better understand these results, we focused on the analysis of morphological changes induced by the variations in the D:
A ratio, with particular attention on the investigation of the presence of percolation pathways for charge transport. Morphology investigations are typically done with techniques like TEM, AFM and PiFM (photo-induced force microscopy).18,19 However, with STEM-EELS elemental mapping, which is used in this study, it is possible to distinguish between donor and acceptor materials based on their chemical composition.20 Elemental ratio maps for nitrogen, present in higher amount in the acceptor (L8-BO (C84H90F4N8O2S5)), and for sulfur, present in higher amount in the donor material (D18 (C76H92F2N2S9)n), allow the visualization of the different phases, shown in Fig. 2. Since 7.77% N atoms are present in the acceptor molecule and 2.25% N atoms (H excluded) are present in the donor, there are 3.5 times more nitrogen atoms in the acceptor material. For the donor material, the sulfur content is 2.1 times higher than the one of the acceptor molecules with 4.85% sulfur in the acceptor vs. 10.11% sulfur in the donor. This enables the representation in elemental ratio maps, separating areas with different atomic ratios of a specific element, in this case nitrogen and sulfur. STEM-EELS data for D18 and L8-BO are shown in Fig. S2a. The mean relative thicknesses (t/λ) of the measured areas are 0.59 (1
:
1.5), 0.44 (1
:
4), 0.47 (1
:
8), 0.56 (1
:
10), 0.44 (1
:
50) and 0.54 (1
:
100) with λ representing the inelastic mean free path of electrons in the material and therefore (t/λ) representing the average number of inelastic scattering events per electron. Thickness estimation is done with a low-loss spectrum, comparing the intensity I0 of the zero-loss peak with the total intensity It of the whole spectrum (t/λ = ln(It/I0)).21 At constant experimental parameters, the mean free path λ depends mostly on the effective atomic number, which is similar for donor and acceptor, so it can be concluded that all samples have a similar thickness.
![]() | ||
Fig. 2 Elemental ratio maps of N (blue) and S (red) based on STEM-EELS measurements of thin films with D![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() |
For the 1:
1.5 ratio, a dense network structure with irregular sulfur- and nitrogen-rich areas are detected as shown in Fig. 2. The sulfur-rich donor material forms strand structures with a thickness of 15–20 nm. Regions used to estimate the diameter of the network strands are shown in Fig. S2b. Overall, an interpenetrating network on the nanoscale was clearly obtained, providing a large D:A interface for charge dissociation and a percolating structure for efficient charge transport.22 The 1
:
4 sample shows a distinct sulfur content reduction, but nevertheless, a dense and regular network structure with polymer fibrils having a diameter between 15 and 27 nm. For the 1
:
8 and 1
:
10 ratios, the network density gets further reduced with 15–20 nm thick strands but also an increased appearance of 6–10 nm thin strands, especially for the 1
:
10 ratio. However, due to the elongated fibrils of D18, a percolating network can be assumed, enabling the relatively high FF obtained for solar cells with this ratio. Smaller photocurrents of the 1
:
10 compared to the 1
:
1.5 or 1
:
4 D
:
A ratio samples, can be explained with D
:
A interface reduction. For the 1
:
50 ratio, a very leaky network is still observed consisting of a few very thin donor threads, which measured approximately 10–15 nm. The presence of fibrils is heavily reduced, which hinders the charge transport in the donor phase due to the lack of percolating pathways. No donor network structure can be recognized in the 1
:
100 layer. Indeed, the solar cells based on these two D
:
A ratios show significantly higher series resistance and lower FF compared to the devices with higher donor content and prominent network structures.
In addition to the STEM-EELS analysis, AFM measurements were conducted and are depicted in Fig. S3 for all ratios. The films with D:
A ratios of 1
:
1.5, 1
:
4 and 1
:
8 show fibrillar structures on the sample surface and for the 1
:
10 ratio, their visibility is significantly reduced, while for the films with 1
:
50 and 1
:
100 D
:
A ratios no similar network-like structures are detectable. The surface roughness values, shown in Table S1, significantly increase with the reduction of the donor material since the polymer does not flatten the film and larger acceptor domains are formed.
These results indicate that dense network structures of the donor are beneficial for obtaining a good fill factor with overall decreasing donor content, but do not prevent JSC losses. Thus, the photocurrent generation was investigated in detail with external quantum efficiency (EQE) measurements. The EQE spectra in Fig. 3a also indicate the overall decreasing current generation and the peak maxima correlate with the maxima of the donor absorption peaks in the range of 500–600 nm. For the 1:
1.5 ratio, the EQE spectrum in the donor absorbing region between 500 and 600 nm is slightly higher than in the acceptor absorbing area around 800 nm, which equalizes for higher ratios but never reverses to higher EQE values at around 800 nm despite increased L8-BO content. This might be caused by the formation of larger L8-BO aggregates between the donor fibrils, which is also revealed by the EELS-based elemental ratio maps and known from literature.19 The observation that the L8-BO in the larger aggregates is not efficiently contributing to the photocurrent generation could be caused by increased recombination within the large L8-BO domains exceeding the exciton diffusion length of approx. 14 nm (in pure L8-BO).23,24 This is additionally supported by the enhanced photoluminescence (PL) of these devices (see below). The comparison of the calculated short circuit current densities from the EQE data with the measured JSC values is given in Table S2.
![]() | ||
Fig. 3 (a) EQE spectra of solar cells with different D![]() ![]() |
The observations in the EQE spectra reveal that the donor material contributes significantly to photocurrent generation, even for absorber layers with lower donor content, but the donor reduction does not have a linear relationship with the JSC values. Comparing the 1:
1.5 (40% donor) and 1
:
100 (1% donor) D
:
A ratios, the donor content decreases by a factor of 40, while the short circuit current density is only reduced by a factor of 7.3 (1
:
1.5 ratio: 24.4 mA cm−2; 1
:
10 ratio: 3.33 mA cm−2). However, with regard to processability, the presence of a certain donor content is of considerable significance, because for pristine L8-BO, processing of homogeneous layers with reasonable thickness is very challenging. Therefore, the concentrations of the precursor solutions are increased from 4 mg ml−1 (1
:
0) to 8 (1
:
1.5), 14 (1
:
4), 16 (1
:
8 and 1
:
10) and 20 mg ml−1 (1
:
50, 1
:
100 and 0
:
1). The layer thicknesses were checked with a profilometer and the spin coating parameters adjusted accordingly to obtain layers of similar thickness.
Furthermore, the EQE spectra at the absorption edge between 895 and 1000 nm were analyzed in more detail to detect charge transfer states, but as it is shown in Fig. 3b, the curves for all ratios follow a linear decline with no visible appearance of the signature of charge transfer states. This is typical for D18:Y6 or other comparable absorber materials as the acceptor exciton and the charge transfer state show a very small energy offset.25
As already discussed above, the absorption spectra in Fig. S1a reveal a redshift for the acceptor peaks in the films with 1:
50 and 1
:
100 D
:
A ratios. The redshift for ratios exceeding 1
:
10 could be caused by a closer packing and increased crystallinity of L8-BO resulting in pronounced inter-molecular electronic couplings as it is shown for Y6.26 A denser π–π stacking typically results in enhanced charge transfer, charge separation and reduced energy losses.27 But the significantly reduced D
:
A interface area in the samples with 1
:
50 and 1
:
100 D
:
A ratio, in combination with increased L8-BO domain sizes, might diminish these advantages. To investigate this in more detail, we characterized the films with grazing incidence wide-angle X-ray scattering (GIWAXS). The obtained GIWAXS images as well as the in-plane and out-of-plane cuts are shown in Fig. 4. It can be well observed that L8-BO has a lower π–π stacking distance compared to D18. The maximum of the π–π stacking peak of D18 is at 16.5 nm−1 (stacking distance: 0.38 nm), whereas the L8-BO reveals a maximum at 17.4 nm−1, which corresponds to a π–π stacking distance of 0.36 nm. While the shape of the 1
:
10 sample is still similar to the samples with 1
:
4 and 1
:
8 ratios (with maxima of the π–π stacking peaks between 16.85 and 17.15 nm−1), the 1
:
100 sample resembles the shape of the pristine L8-BO film very well and the maximum of the π–π stacking peak is very similar to the value of the pristine L8-BO film. Moreover, it can be observed that the L8:BO lamellar stacking distance in the blends remains unchanged compared to the pristine L8-BO film as indicated by the in-plane peak at 4.6 nm−1 corresponding to a lamellar stacking distance of 1.36 nm.
Furthermore, SCLC measurements of hole and electron only devices were performed (Fig. S4) and the obtained mobility values are summarized in Table 1 and Fig. 5a. We observed very comparable hole mobilities in the investigated D18:L8-BO blend films and even for pristine acceptor devices. This can be attributed to the ambipolar nature of L8-BO providing multiple charge-hopping channels and strong electronic coupling.28 Also the electron mobilities have only a small correlation with varying the D:
A ratios, except for pristine D18 devices, where a pronounced decrease in electron mobility is observed. For acceptor contents above 89% (1
:
8), the electron mobilities are decreasing. This trend was also found in PM6:Y6 cells with decreasing donor content.16 It is assumed that the domain interconnectivity is reduced by increasing acceptor aggregation and thus has a significant negative effect on electron mobility29 and is supported by the found increasing serial resistance. While these experiments reveal that the donor material is not a prerequisite for sufficient charge carrier mobilities, the loss of separate pathways for hole and electron transport enhances recombination in the active layers with low donor content.
![]() | ||
Fig. 5 Charge carrier mobilities for different D![]() ![]() |
Furthermore, Jph–Veff characteristics, as shown in Fig. 5b, were collected. The ratio of JSC and Jsat (Veff = 2 V) gives insight into the efficiency of exciton dissociation, while the ratio of the current density at the maximum power point (JMPP) to Jsat provides information about the charge collection efficiency, both shown in Fig. 5c. The corresponding values are given in Table 1 and Table S3. Exciton dissociation stays above 0.88 for ratios up to 1:
10, with a significant drop for the 1
:
50 and 1
:
100 ratios down to 0.54 and 0.43, respectively. In contrast, the charge collection efficiency in comparison to the exciton dissociation efficiency is decreasing more rapidly from 0.83 for 1
:
1.5 to 0.19 for 1
:
100. These results are in line with the reduction of the JSC in these devices (cf.Table 1) and leads to the conclusion that approximately half of the losses in the 1
:
100 devices are caused by the fact that only half of the excitons (compared to the 1
:
1.5 device) dissociate and 80% of the generated charges are lost via nongeminate recombination due to insufficient charge transport.
Moreover, the recombination behavior was investigated with experiments on light intensity dependence of the JSC shown in Fig. 6a and the VOC (Fig. 6b). Alpha values derived from JSCvs. light intensity measurements (JSC ∝ Iα, with I for intensity) reveal information about recombination.30 Interestingly, the alpha values derived from the linear fits, shown in Table S4, reveal values close to 1 for all the different ratios, validating balanced charge transport also shown in the SCLC measurements. However, VOC measurements at different light intensities vary significantly for different D:
A ratios. With decreasing light intensities, the VOC of cells with ratios of 1
:
1.5 and 1
:
4 decreases quite linearly, while the voltage values for solar cells with lower donor content do not follow a linear trend. This could be caused by increased leakage currents with less donor content. The net current is comprised of the diode current, leakage current and the photogenerated current whereas all of them are voltage-dependent but only the latter scales with light intensity. As a consequence, the leakage current is of particular significance at lower light intensities.31 The extent of leakage currents is predominantly influenced by the shunt resistances, which were determined from the dark curves for all different ratios. Shunt resistances decrease from 30.9 kΩ cm2 (1
:
1.5) to 7.7 (1
:
4), 3.1 (1
:
8), 3.4 (1
:
10), 2.4 (1
:
50) and 2.1 kΩ cm2 (1
:
100), as shown in Fig. 6c, which could therefore confirm the problem with leakage currents. This makes it tricky to extract exact ideality factors, but an attempt was made to estimate the ideality factors from the data points at light intensities between approx. 100 and 30 mW cm−2, as the VOC dependence in this range shows a linear behavior and the results are shown in Fig. 6c and Table S4. For the 1
:
1.5 and 1
:
4 ratios, ideality factors close to 1 indicate that primarily bimolecular recombination occurs, while for the residual ratios, trap-assisted recombination gets increasing prominence, possibly caused by isolated donor island structures.32
The exciton recombination is further investigated with photoluminescence (PL) measurements. The different ratios are tested at open circuit and short circuit conditions plotted in Fig. 7a with the raw (not normalized) data in Fig. S5. The same energetic position of the photoluminescence peak in all samples suggests that the radiative recombination stems from the singlet exciton of the L8-BO. Minimal variation of the PL spectra recorded at Voc and Jsc shows that only a fraction of charge carriers extracted under short circuit conditions recombine radiatively when the device is operated at open circuit. The observed emission origins from regions in the absorber layer where no charge generation is taking place and thus the photoluminescence increases with decreasing donor concentration (see Fig. S5), as larger L8-BO domains are formed. In these larger domains, photoexcitation predominantly leads to the formation of excitons, which recombine before they can be split at a D:A interface.
![]() | ||
Fig. 7 Photoluminescence (PL) measurements of D18:L8-BO solar cells with different D![]() ![]() |
In addition to PL measurements, where laser excitation of charge carriers is used, electroluminescence (EL) measurements are performed with applied currents changing in the range from 100 to 1300 μA for the ratios 1:
1.5, 1
:
4, 1
:
8 and 1
:
10 and 200 to 1300 μA for the ratios 1
:
50 and 1
:
100, shown in Fig. 7b. The electroluminescence matched the energetic position of the photoluminescence and increases exponentially in intensity with increasing injection currents.25
Reducing the donor concentration leads to higher EL intensities. In solar cells with a D:
A ratio of 1
:
1.5, holes are predominately injected into the donor polymer and electrons are injected into the acceptor phase. Charge carriers recombine across the D:A interface mostly non-radiatively.
At low donor concentrations, electrons and holes are injected into the acceptor phase. As L8-BO supports the transport of electrons and holes, recombination of charges in the acceptor phase leads to the formation of L8-BO excitons. This is also supported by the bias-dependence of the electroluminescence (Fig. S6). While devices with D:
A ratios between 1
:
1.5 and 1
:
10 show a steep increase of the EL between 0.8 and 0.9 V, much larger voltages are required to achieve similar EL intensities for lower donor concentrations.
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