Melissa Sophie
Egger
a,
Marco
Sigl
a,
Robert
Saf
a,
Heinz
Amenitsch
b,
Ana
Torvisco
b,
Thomas
Rath
*a and
Gregor
Trimmel
*a
aInstitute for Chemistry and Technology of Materials (ICTM), NAWI Graz, Graz University of Technology, Stremayrgasse 9, 8010 Graz, Austria. E-mail: thomas.rath@tugraz.at; gregor.trimmel@tugraz.at
bInstitute of Inorganic Chemistry, NAWI Graz, Graz University of Technology, Stremayrgasse 9, 8010 Graz, Austria
First published on 11th June 2025
Metal sulfides are promising materials for a wide range of applications, from environmental applications to energy conversion and storage. Like many other transition metal sulfides, nickel sulfide exists in different stoichiometries and phases, which influence their chemical and physical properties. While this feature enables the compound's diversified applications, it also makes it necessary to develop simple and reproducible methods to prepare nickel sulfide with defined composition, phase, and morphology. For metal xanthates, the design of the xanthate ligand allows to tune the properties of the metal sulfide obtained by their thermal conversion. To efficiently tailor the precursor to the application, it is imperative to understand the degradation mechanism of the precursors and the formation of the nickel sulfide phases. In this study, we synthesized a series of nickel xanthates bearing alkyl side chains of varying lengths and branching: methyl, ethyl, n-propyl, iso-propyl, iso-butyl, n-pentyl, neo-pentyl, and n-hexyl. Together with two additional nickel xanthates, we systematically investigated their thermal decomposition behavior and the resulting decomposition products using thermogravimetric analysis with coupled gas chromatography/mass spectrometry, pyrolysis gas chromatography/mass spectrometry, single crystal and powder X-ray diffraction, and grazing incidence wide angle X-ray scattering. Based on these findings, we propose a two-step decomposition mechanism that combines alkyl transfer between the ligands with an extended version of the literature-known Chugaev mechanism, which describes alkene formation from xanthates. This refined mechanism can explain the conflicting degradation products reported in literature so far. Additionally, we studied the influence of the ligand on the formed nickel sulfide using temperature dependent X-ray scattering experiments. The decomposition of the xanthates leads to the initial formation of α-NiS at low temperatures for all the precursors, followed by a phase transformation at higher temperatures. Depending on the precursor both pure α- or β-NiS and various mixed phases can be obtained.
Nickel sulfide is an inorganic semiconductor which presents itself in a multitude of stoichiometries and crystalline phases. Depending on the specific phase, its scope of applications is vast: From energy storage applications such as battery or supercapacitor electrodes,9 photo(electro)catalytic water splitting,10,11 to medicinal applications12,13 or water treatment and disinfection.14 Nevertheless, it is necessary to devise simple, economical and reliable methods to control stoichiometry, polymorphs and morphology.8
There are numerous methods for the preparation of binary, ternary or other multi-metal sulfide nanomaterials. The different obtainable structures such as nanospheres (0D), nanorods (1D), nanosheets (2D) and mesoporous hierarchical structures (3D) strongly influence nanostructured materials and their functional properties.15 However, to enable the use of nanostructured metal sulfides, large-scale synthesis methods of metal sulfides with well-defined, tunable properties are necessary.1
The most commonly used preparation methods for transition metal sulfide nanostructures are hydro- or solvothermal synthesis. By varying reactants (metal precursor, sulfur source, surfactant, solvent) and conditions (reaction time and temperature, concentrations, pH-values) these methods provide good control over the nanostructure morphology and composition.16 A promising alternative to conventional solvothermal synthesis methods is the use of single source precursors (SSPs). This approach uses metal complexes with ligands containing the desired chalcogenide. SSPs can be used in a broad range of different fabrication methods to replace multiple precursors. Volatile SSPs can be used in molecular organic chemical vapor deposition, which provides clean decomposition at relatively low temperatures. Soluble SSPs might be used in further methods such as aerosol-, spray-, or injection pyrolysis, in the solvothermal preparation of nanoparticles, or also directly in solvent-free solid-state pyrolysis. Both elements being present in a single compound simplifies the experimental procedure for the fabrication of metal sulfides compared to using multiple element sources.18 Furthermore, the ligand usually coordinates to the metal center via the chalcogenide. Therefore, the precursor features preformed bonds between the metal and the chalcogen atoms, which can result in a product with fewer defects and more defined stoichiometry. Additionally, this approach allows not only the control of the stoichiometry but also the control of other properties such as solubility and volatility of the precursor by the design of the ligand.17,18
There are a few characteristics necessary for a compound to be suitable as a SSP. The synthesis should be simple, easily scalable and the compound should be obtained in high yields and high purity to prevent possible contaminations of the deposited material. The precursor should be stable in air, have a low toxicity, and, ideally, the thermal decomposition of the complex should yield the thin film/nanoparticles with only volatile byproducts. However, the ligands are often not cleanly evaporating into the gas phase, but undergo complex fragmentations, especially for heteroleptic compounds. For the rational design of precursors yielding materials with the desired properties, insights into the molecular decomposition pathways are necessary.18
One class of single-source precursors for the fabrication of metal sulfide nanoparticles or thin films are transition metal xanthates.19–27 Metal xanthates are the metal salts of xanthic acid, therefore already containing metal–sulfur bonds, and are highly versatile as precursors through the modification of the ligands. Metal xanthates are both easily synthesized and easily converted thermally to the corresponding metal sulfide. The thermolysis occurs at relatively low temperatures with only volatile byproducts, and can be done solventless, or in different media such as solvents or polymers.28 The xanthate's properties can be modified via the choice of the alkyl side chain of the xanthate ligand(s),22,29,30 or by using heteroleptic complexes containing additional ligands such as triphenylphosphine31 or pyridine derivatives.32,33 The modification of volatility and solubility enables the use in different processing methods such as aerosol-assisted chemical vapor deposition, spin coating, drop casting, and co-casting with other metal xanthates or polymers.18,34,35 This allows using xanthates in quite interesting and unconventional applications, one of which is laser printing of xanthates on paper using a mixture of metal xanthate, polymer and commercial toner. Thermal conversion of the precursor in the toner mixture yields metal chalcogenides for printed electronics.34 Another application is to prepare polymer thin films containing xanthate based semiconductor nanostructures for flexible electronics.36
However, the decomposition pathway of metal xanthates, often stated to occur in a Chugaev- or Chugaev-like mechanism (Scheme 1A), is rather complicated. Previous research suggests that the identity of the metal center has only a small influence on the pathway. On the other hand, major differences in the produced byproducts, and therefore the corresponding pathway, were found depending on the alkyl substituent. An alternative pathway was proposed by A. Piquette (Scheme 1B),21 however, the proposed eight-membered cyclic transition state is energetically unfavored and thus very unlikely. Also, this does not account for results of different studies finding the decomposition products expected for the Chugaev-elimination.33 This highlights the need for an in-depth investigation to shed light on the complex decomposition pathway.
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Scheme 1 (A) Chugaev-like degradation pathway for metal xanthates forming the metal sulfide and COS, alkene and xanthic acid side products. (B) Degradation pathway for xanthates proposed by A. Piquette, yielding a purely organic xanthate via an alkyl transfer.2 |
Consequently, in this study we prepared a series of nickel xanthates (NiXas) with ligands featuring alkyl chains of differing lengths and branching and studied the decomposition of the xanthates and the properties of the formed nickel sulfide thin films. We characterized the thermal decomposition behavior of the xanthates using thermogravimetric analysis (TGA), TGA-gas chromatography/mass spectrometry (GCMS) and pyrolysis-GC-HRMS, with the focus of this work placed on the decomposition mechanism of the nickel xanthates. Furthermore, we studied the properties of the nickel sulfide thin films using X-ray diffraction (XRD) and temperature dependent grazing incidence wide angle X-ray scattering (GIWAXS).
The solubility of the nickel xanthates can be tuned easily by the choice of the alkyl chain. The solubility in chloroform of the precursor with the shortest possible alkyl chain, NiXaC1, is too low to prepare films. With increasing chain length, the solubility increases, and for NiXaC2 the solubility is already sufficiently high (>0.1 mmol mL−1) to use this precursor for the preparation of thin films.
The procedure and the structures of the prepared xanthates are given in Scheme 2. With the exception of NiXaC5b, for which only a pyridine adduct has been reported,44 the discussed nickel xanthates are already known in the literature. However, NMR spectra (not reported: NiXaC1, NiXaC3, NiXaC5b, NiXaC6) and crystal structures (not reported: NiXaC5, NiXaC5b) have not been published for all compounds so far. The 1H and 13C NMR spectra (Fig. S1–S8) given in the ESI† are in accordance with the proposed structures, as well as with the values given for the already literature known compounds.22,39,40
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Scheme 2 Synthesis route used for the preparation of the nickel xanthates and the chemical structures of the alkyl ligands of the xanthates investigated in this study. |
The experimental mass loss for most of the xanthates is consistent with the theoretical mass loss expected for the formation of stoichiometric NiS (see also Table S1, ESI†). Minor deviations from the theoretical value were in the range of ±2.5% pt. While a slightly lower mass loss can be explained by the presence of decomposition products or sulfates, the higher mass loss might stem from a vapor phase transport of the nickel xanthate or the newly formed nickel sulfide. The observed formation of very thin films on adjacent surfaces supports this explanation, as also observed by A. Piquette.21
To investigate these proposed pathways, we performed TGA-GC-MS experiments. In this setup, the TGA sample chamber is connected to the GC inlet via a heated transfer line. Therefore, the setup introduces some delay between the formation of the decomposition products and the start of the GC measurement. First experiments with this setup yielded ambiguous results that varied strongly between repeated measurements. A result common to all experiments was that the alkene expected from the Chugaev mechanism was usually not the main product and, in some cases, hardly present. Additionally, we found a range of decomposition products which cannot be explained by the proposed pathway, such as O,S-dialkyl dithiocarbonate, dialkyl sulfide, or CS2.
As depicted in Fig. 3, we observed strongly dissimilar results for the linear and branched xanthates. While the linear xanthates (Fig. 3A and C) behaved similarly among each other, the branched xanthates (Fig. 3B and D) strongly differed from them and among each other. For the linear xanthates, the O,S-dialkyl dithiocarbonate (xanthate ester) species was by far the major product with 75 to 85%. The full report of the decomposition products is given in Table S10 in the ESI.† For most precursors no significant amount of alkenes was detected. In the case of NiXaC5b, where the formation of alkenes is not possible, dimethyl cyclopropane was found.
The observed decomposition products cannot be explained by the Chugaev pathway. This, as well as the absence of alkenes, instead suggests the occurrence of an alkyl transfer between the xanthate ligands, thereby forming the ester (Scheme 1B), as described by A. Piquette.21 8-membered transition states are usually energetically unfavorable, therefore we propose an alternative mechanism for the alkyl transfer proceeding via a 6-membered transition state (Scheme 4A). The alkyl transfer eliminates the need for a β-hydrogen to be present in the structure. This explains the decomposition profile of the nickel methyl xanthate being consistent with the series of linear xanthates despite not having a β-hydrogen. In addition, it might provide an explanation for the different behavior of the branched ligand xanthates. The higher steric demand of the branched alkyl chain might hinder the attack of the sulfur atom on the α-carbon of the second xanthate ligand, therefore slowing the reaction and enabling another pathway. The steric pressure on the α-carbon (Scheme 3B) increases in the order NiXaC4b < NiXaC5b < NiXaC3b, which fits to the decrease of the relative amount of dithiocarbonate. Also, the branched precursor with the lowest steric hindrance (NiXaC4b) shows a decomposition profile matching that of the linear xanthates.
Not only are the obtained results contradictory to the pathway generally assumed to occur in literature reports, they also strongly differ from the results using the TGA-GC-MS setup (Fig. 4). For this comparison, we chose the linear pentyl xanthate NiXaC5, as its decomposition products are well resolved in the GC. The most noticeable difference is the prominent peak present in the pyrolysis-GC-HRMS measurement corresponding to the O,S-dipentyl dithiocarbonate (marked in yellow), which is only weakly existent in the TGA-GC-MS experiment. Instead, the TGA-GC-MS shows several medium intensity peaks (marked in black), with the main products being the dipentyl sulfide and pentane thiol. In addition, the expected Chugaev elimination product – 1-pentene – is present in relative high amounts compared to the pyrolysis-GC-HRMS measurement.
We conducted a series of follow up experiments with the TGA-GC-MS setup to investigate these discrepancies, using the precursor NiXaC5. For those experiments, the sample was heated rapidly to the sampling temperature, followed by an isothermal step during which the sampling for the GCMS occurred. The sampling temperature was varied between 200 and 250 °C. In addition, we adjusted the temperatures of the transfer system to the GC (transfer line, interface, and inlet) accordingly. For temperatures between 200 and 220 °C, the pentyl dithiocarbonate was the main decomposition product by far, while only small amounts of alkene, alcohol and thiol were detected. The product distribution resembles very much the results from the pyrolysis-GC-MS experiment. However, when increasing the sampling temperature to 230 °C, the amount of dithiocarbonate abruptly decreased, and we observed larger amounts of COS, alkene, and alcohol. Upon further increase of the temperature, we could no longer detect any significant amount of dithiocarbonate. Instead, larger amounts of alkene, carbon disulfide, aldehyde and alcohol were formed (Fig. 5). These findings, in combination with the previous results from the pyrolysis-GC-HRMS experiments, suggest that the decomposition of the metal xanthate occurs in two distinct steps. The first step of the decomposition reaction is the formation of the metal sulfide and the O,S-dialkyl xanthate ester (Fig. 5A, 200 °C). The subsequent decomposition of the dialkyl xanthate ester occurs according to the Chugaev pathway and yields CS2, COS, alkene, aldehyde, alcohol, thiol, and alkyl sulfides/disulfides (Fig. 5A, 250 °C).
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Fig. 5 (A) Results of the TGA-GCMS measurement of NiXaC5 at sampling- and instrument temperatures between 200 and 250 °C (order of the decomposition products was inverted compared to Fig. 3 for readability). The measurement denoted by 200* (turquoise) depicts a measurement at a sampling temperature of 200 °C and device transfer temperature of 300 °C. The comparison with the measurement 200 (dark red) illustrated the strong impact of the measurement conditions on the result. (B) Change of the relative amounts of the two main products (pink: COS, blue: dithiocarbonate) in dependence on the sampling- and instrument temperature. |
In standard TGA-GC-MS experiments, the temperatures of the transfer system are set to higher values to minimize material deposition and clogging in the transfer line. However, this drastically changed the product distribution and complicated the identification of the degradation mechanism. We assumed that the high temperature in the transfer line resulted in the further decomposition of the unstable intermediates. To verify this assumption, we conducted another measurement at a low sampling temperature of 200 °C but kept the temperature of the GC components at 300 °C (Fig. 5A, 200*). This experiment showed a completely different decomposition profile, with low amounts of the dithiocarbonate and high amounts of the lighter products, thereby supporting our assumption. The direct comparison of the two main products for all the sampling temperatures is given in Fig. 5B.
Based on our results, we propose a combined decomposition pathway for the linear nickel xanthates and NiXaC4b (Scheme 4), assuming an intramolecular reaction mechanism. First, the nickel xanthate undergoes an alkyl transfer from one ligand to another, thereby forming a purely organic xanthate ester and nickel sulfide (Scheme 4A). The second step of the mechanism is the degradation of the organic xanthate via an expanded Chugaev mechanism (Scheme 4B). This includes the classical Chugaev mechanism (Scheme 4B, red), yielding alkene, COS, and thiol. Additionally, it includes the possibility of the 6-membered transition state of the Chugaev pathway being formed via the hydrogen on the β-carbon to the xanthate sulfur (Scheme 4B, blue). This explains the presence of CS2 and alcohol in the decomposition products. Further products can be explained by thermal rearrangement (Scheme 4B, pink), which yields the S,S-dialkyl xanthate, or the recombination of thermally formed radicals. Recombination leads to the formation of alkyl sulfides and disulfides (Scheme 4B, lilac), as well as the O,O-dialkylthiocarbonate (Scheme 4B, green).
While the decomposition profile of the branched precursor NiXaC4b matches those of the linear xanthates, NiXaC3b and NiXaC5b behave differently. For NiXaC5b the dialkyl dithiocarbonate is still the main decomposition product, but is present in a significantly lower percentage. This might be due to the steric hindrance of the large alkyl substituent, which slows down the proceeding of the intramolecular alkyl transfer, and possibly enables the occurrence of an alternative decomposition mechanism. A possibility for this might be a Chugaev-like decomposition mechanism consisting of the initial elimination of one alkyl substituent which forms the 1,1-dimethylcyclopropane. This is followed by the elimination of COS and the second xanthate ligand. For NiXaC3b, the decomposition profile suggests that the decomposition proceeds preferentially via a radical pathway.
The obtained XRD patterns (Fig. 6) confirm the formation of NiS for all precursors and reveal a strong influence of the temperature and some influence of the side chain on the formed polymorph. Using an annealing temperature of 400 °C or 300 °C (see Fig. S17, ESI†) depending on precursor and temperature, mixtures of different ratios of the hexagonal α-NiS (main diffraction peaks: 30.1 (100), 45.9° 2θ (102)) and the rhombohedral β-NiS (main diffraction peaks: 18.5 (110), 32.2 (300), 48.9° 2θ (131/311)) were obtained.
However, an annealing temperature lower than 250 °C leads to the formation of pure α-NiS from all the precursors. Depending on the precursor, annealing at 200 °C is not sufficient for a complete conversion (C3, C4b, C5b, C6b, C7b, see Fig. S17 in ESI,† compare to TGA in Fig. 2). This formation of the α-NiS phase represents a reversal of the behavior typically reported for the Ni-S system: the thermodynamically stable β-NiS is formed at low temperatures, while the metastable α-NiS is only formed at high temperatures.47 The presence of α-NiS at this relatively low temperature is a known peculiarity of the synthesis of NiS from sulfur-rich single-source precursors such as xanthates or dithiocarbamates.19 Due to the high sulfur content in the system, xanthates favor the formation of the slightly over stochiometric, sulfur-rich α-phase.48 Upon further heating, a phase transition from α- to β-NiS occurs, which can be observed in the emerging of the reflections of the beta phase, while the peaks corresponding to the alpha phase decrease in intensity. At 400 °C, varying mixtures of β- and α-NiS are obtained depending on the precursor. The amounts and the average crystallite sizes were calculated from the respective phase's major peaks (45.9 (102, α-NiS) and 32.2° 2θ (300, β-NiS), Tables S11 and S12, ESI†). For the short-chained precursors NiXaC2 and NiXaC3, the mixtures contained high amounts of α-NiS, while phase-pure β-NiS was formed from the precursors NiXaC4b, NiXaC5 and NiXaC7b. This possibility to control the phase plays an important role in tailoring materials properties to the desired application, such as photocatalysis.49
The formed polymorph is not only influenced by the sintering temperature, but also by other factors such as the heating rate. We did XRD heating runs of the precursor NiXaC4b to get real-time information of the thermal conversion and phase formation. When using a slow heating rate (Fig. 7), again, the formation of the α-phase can be observed initially. Subsequently, the β-phase emerges already during the heating step. During cooling, the α-phase is almost completely converted to the β-phase when reaching 200 °C. In contrast, when a fast heating rate is used, no β-phase is formed during the heating and holding step at 400 °C (Fig. S18A, ESI†). Only during cooling the α-phase is converted to β-NiS. Fast heating yields slightly smaller primary crystallites and a higher amount of α-NiS (see Fig. S18, ESI†).
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Fig. 7 XRD heating run of the precursor NiXaC4b. Heating rate: 2 °C min−1, 30 minutes holding steps at 400 °C during heating and at 40 °C after cooling. |
However, the precursor also influences the product: a comparison of heating runs of two different precursors (NiXaC4b and NiXaC5b, Fig. S18 and S19, ESI†) at the same conditions shows that while both precursors yield a phase mixture, the NiS produced from the precursor NiXaC5b consists of predominantly α-NiS with significantly smaller primary crystallites.
In Fig. 8A, at low temperatures, the diffraction pattern of the crystalline NiXaC3b precursor is visible, which disappears at approximately 115 °C due to the melting of the precursor. At 170 °C, the alpha phase starts to emerge, which fits the onset-temperature of the decomposition determined by TGA (see Fig. 2). The presence of the alpha phase – usually considered the high-temperature phase – at this relatively low temperature can be explained by the aforementioned high sulfur content in the system.48 Upon further heating, the reflections of the beta phase start to appear at 215 °C, while the ones corresponding to the alpha phase decrease in intensity. At 400 °C the alpha phase has disappeared almost completely. During the holding and cooling step, the primary crystallite size and crystallinity increase without further observable changes of the phase (Fig. 8B). From this precursor, NiS is obtained almost phase pure as β-NiS (α-NiS/β-NiS: 5.0/95.0%, calculated from the respective phase's major peaks at 45.9 (102, α-NiS) and 32.2° 2θ (300, β-NiS)).
For the nickel neopentyl precursor (Fig. 8C), the larger side chain leads to a higher stability, and the melting and onset of the decomposition can be observed at 200 and 210 °C, respectively. The reflections of the alpha phase start to emerge shortly after at 215 °C. Interestingly, further heating did not lead to a phase transition, only an increase of the primary crystallite size (Fig. 8D), forming significantly larger crystallites than when the α-NiS exists as the minor phase (Fig. 8B). This differs from the XRD measurement of the thin films prepared on glass slides (Fig. 6B), which shows a high percentage of β-NiS. As phase transitions in nanomaterials can be influenced by many different interacting factors,19 these variations could be due to differences in the experimental setups of XRD and GIWAXS measurements, such as nitrogen flow and heating rates. In addition, the formed phase can also be influenced by the support material (for this measurement silicon), as reported by Buchmaier et al.22
The previous experiments have been carried out in thin films, however, we observed similar trends in NiS prepared as powders (Fig. 9). The β-NiS phase remains the major phase for the precursors NiXaC3b, NiXaC4b and NiXaC7b, while most other precursors lead to phase mixtures. Due to the different heat distribution and cooling in the bulk phase compared to thin films, different phase ratios are obtained.
In the second part of this study, we investigated the formation of the NiS phases from the precursors. While it is obvious that there are several factors influencing the final phase composition, we were able to show that for all precursors, α-NiS is the initial phase. At higher temperatures, the α-phase is partly or fully converted to β-NiS for most precursors. Slow heating generally resulted in a more complete conversion of the α- to the β-NiS phase for precursors yielding a phase mixture, and the formation of larger primary crystallites. So, although we could not determine the underlying reasons, it was possible to reproducibly obtain phase-pure α- or β-NiS and mixtures of both phases, depending on precursor choice and heating rates.
Our findings enabled us (i) to propose a refined degradation mechanism for nickel xanthates and (ii) to a good extent, control the formed nickel sulfide polymorph. Further research regarding the influence of the alkyl chains on properties such as porosity, particle sizes and more will be of interest for applications. Xanthates as single-source precursors provide a very facile and increasingly used method to prepare homogeneous nanomaterials and thin films of semiconductors, with possible applications ranging from printable electronics to photovoltaics and electro- or photocatalysis.
Nickel O-3,3-dimethylbutan-2-yl-dithiocarbonate (NiXaC6b) and nickel O-2,2-dimethylpentan-3-yl-dithiocarbonate (NiXaC7b) were previously prepared.22 Potassium ethyl xanthate was purchased from Sigma-Aldrich and used without further purification.
NMR spectra were recorded on a Bruker Ultrashield 300 MHz NMR spectrometer (1H NMR: 300 MHz, 13C NMR: 75 MHz). The solvents used were deuterated chloroform with tetramethylsilane (TMS) (1H NMR: 7.26 ppm, 13C NMR: 77.16 ppm) and deuterium oxide (1H NMR: 4.79 ppm). The spectra were evaluated with TopSpin 3.1 from Bruker.
FTIR spectra were measured on a Bruker Alpha FTIR spectrometer in attenuated total reflection (ATR) mode using the ALPHA's Platinum ATR single-reflection diamond ATR module. All spectra were recorded in a range between 4000 and 400 cm−1 with 24 scans and the air as background.
Thermogravimetric measurements were performed on a PerkinElmer TGA 8000 thermogravimetric analyzer in ceramic crucibles under nitrogen atmosphere with a flow rate of 40 mL min−1. The operated temperature range was between 40–450 °C with heating rates of 10 to 40 °C min−1. The onset of decomposition temperature was taken as the intersection of the baseline and the tangent at the point of maximum gradient.
Thermogravimetric measurements with coupled gas chromatography/mass spectrometry (TGA-GCMS) were performed on a GCMS-QP2010 SE equipped with a GC-2010 Plus from Shimadzu (Kyoto, Japan) and the GC column Zebron ZB-5ms (30 m, 0.25 mm i.d., 0.25 mm film thickness) from Phenomenex (Torrance, CA/USA). The sample was introduced to the GC via a transfer line from the TGA. The GC was operated with nitrogen as carrier gas at a flow of 0.5 mL min−1. The program of the oven was: Initial temperature of 40 °C for 4 min, heating to 300 °C at 20 °C min−1 and holding at this temperature for 5 minutes. Mass spectra were acquired after a solvent delay of 0.2 min in the mass range of 35–600 m z−1 with a recording interval of 0.2 s.
Pyrolysis gas chromatography/mass spectrometry (Pyrolysis-GCMS) analyses were performed on a JMS-T2000GC (AccuTOFTM GC-Alpha) from JEOL Ltd (Tokyo, Japan) equipped with an 8890 GC System from Agilent (Santa Clara, CA/USA) and a Single-Shot Pyrolyzer PY-3030S from Frontier Laboratories Ltd (Saikon, Koriyama, Japan). The furnace temperature of the pyrolyzer (TPyr) was usually 250 °C, the interface temperature 250 °C, and a sampling time of 0.1 min was applied. The GC column used was a Zebron ZB-5 ms (30 m, 0.25 mm i.d., 0.25 mm film thickness) from Phenomenex (Torrance, CA/USA). The GC was operated with helium as carrier gas at a constant flow rate of 1.0 mL C min−1, the split ratio was 10. The program of the oven was as follows: Initial temperature of 40 °C for 3 min, heating to 280 °C at a rate of 20 °C min−1, and finally isothermal at 280 °C for 5 min. The GC-MS interface was at 270 °C. Electron ionization (EI+, 70 eV, 200 μA; source at 250 °C) mass spectra were acquired after a solvent delay of 0.2 min in the mass range 10–700 Da using a recording interval of 0.25 s. The resolution (FWMH) was >16000 for small masses, and >30
000 at higher m/z ratios. Mass calibration was done with PFTBA, drift compensation via reference from the reservoir in time windows of 0.6–0.8 and 19.6–9.8 min, respectively.
Appr. 0.1 μg of the samples were filled into the deactivated sample cup of the pyrolyzer and transferred into the pyrolyzer. To allow removal of oxygen brought into the system with the sample/cup pyrolysis-GC-MS analysis were started after an additional delay of 5 min using the conditions described above.
Data analysis/chromatographic deconvolution was done with the software msFineAnalysis version 2 from JEOL. All detected peaks were searched against the NIST 2020 mass spectral database. Elemental composition analysis was performed for molecular ions as well as for all corresponding fragment ions. Mass accuracies were generally in the low ppm range (compare tables in the ESI†).
X-ray diffraction (XRD) measurements were taken on a RIGAKU MiniFlex 600 with D/Tex Ultra detector operated at 40 kV and 15 mA using CuKα radiation (λ = 1.5418 Å). The measurement was performed on a silicon zero-background sample holder.
Grazing incidence wide angle X-ray scattering (GIWAXS) measurements were performed at the Austrian SAXS beamline 5.2 L of the electron storage ring Elettra (Italy).50 The GIWAXS setup was adjusted for an angular range of 2θ between 29 and 55° (q = 4π/λsin(2θ/2)) and the experiments were carried out with a photon energy of 8 keV. The angular calibration of the used Pialtus3 100 K detector was performed using p-bromo benzoic acid. The conversion of the diffraction images was conducted with SAXSDOG.51 The samples were mounted on an Anton Paar DHS 1100 heating cell equipped with a specially designed dome with Kapton windows to provide high X-ray transmissivity with low background. The sample chamber was purged with N2 during the heating run experiments. One frame was recorded every 6 seconds for a temperature resolution of 1 °C and an incident angle of 0.55° was used.
For the determination of the integrated intensity (out-of-plane direction) of the α- and β-NiS in the heating runs, reflexes without overlapping neighbor peaks were chosen. NiXaC3b: 2θ values of 44.7 to 47.5° (102, α-phase), 48.6 to 49.9° (300, β-phase). NiXaC5b: 2θ values of 45.3 to 46.8° (102, α-phase).
For single crystal X-ray crystallography, all crystals suitable for single crystal X-ray diffractometry were removed from a vial and immediately covered with a layer of silicone oil. Compounds NiXaC3, NiXaC3b, NiXaC4b, NiXaC5b, NiXaC6 crystallized as a birefringent crystal (dichroic) with the colors light orange/green. A single crystal was selected, mounted on a mitegen on a copper pin, and placed in the cold N2 stream provided by an Oxford Cryosystems cryostream. Data for crystal structures of the aforementioned compounds were collected using a Rigaku XtaLAB Synergy, Dualflex, HyPix-Arc 100 diffractometer. Data were measured using Cu Kα radiation (λ = 1.54056 Å). The diffraction pattern was indexed and the total number of runs and images was based on the strategy calculation from the program CrysAlisPro.52 The unit cell was refined and data reduction, scaling and absorption corrections were performed using CrysAlisPro. Using Olex2,53 the structure was solved with the SHELXT54 structure solution program and refined with the SHELXL55 refinement package using full matrix least squares minimization on F2. All non-hydrogen atoms were refined anisotropically. All hydrogen atoms for all compounds were located in the difference map. All crystal structures representations were made with the program Diamond56 with all non-carbon atoms displayed as 30% ellipsoids. CIF files were edited, validated and formatted either with the programs encifer,57 publCIF,58 or Olex2.53 All presented C–H⋯S hydrogen bonds22 and C–H⋯Ni anagostic interactions59–61 fall within expected ranges. Compound NiXaC342 has been previously published. The crystal structures NiXaC3b,43 NiXaC4b,37 NiXaC637 had been reported at RT, therefore, the 100 K data obtained for these structures were deposited in the CCDC database along with the newly reported NiXaC5b. CCDC 2430036–2430039 contain the supplementary crystallographic data for the compounds NiXaC3b, NiXaC4b, NiXaC5b and NiXaC6, respectively. These data can be obtained free of charge from The Cambridge Crystallographic Data Centre via www.ccdc.cam.ac.uk/data_request/cif. Table S14 (ESI†) contains crystallographic data and details of measurements and refinement.
Footnote |
† Electronic supplementary information (ESI) available: NMR spectra, additional single crystal structures, mass spectrometry data, additional GIWAXS data of heating run experiments. CCDC 2430036–2430039. For ESI and crystallographic data in CIF or other electronic format see DOI: https://doi.org/10.1039/d5tc01096a |
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