Open Access Article
Jingwen Gong
a,
Qi Zhaob,
Jingtao Huang*ac,
Zhuocheng Yea,
Zihao Wanga,
Yidong Chena and
Wei Gong*a
aCollege of Electrical Engineering, Sichuan University, Chengdu, 610065, Sichuan, China. E-mail: Gwei349@163.com
bState Grid Sichuan Electric Power Company Leshan Power Supply Company, 614000, China
cCollege of Electrical Engineering, Northwest Minzu University, Lanzhou, 730030, China
First published on 15th December 2025
This study investigates the degradation state of silicone rubber (SiR) under electric and thermal fields by analyzing its gas-evolution characteristics. The goal is to provide a new diagnostic approach for high-voltage cable accessories. Thermogravimetry-infrared spectroscopy (TG-IR) was used to trace the thermal decomposition products. Electrical breakdown was simulated through discharge experiments. Density functional theory (DFT) calculations and reactive force field (ReaxFF) molecular dynamics simulations were employed to verify the reaction mechanisms and decomposition pathways. The results show that under electric field, SiR mainly produces CH4, C2H2, and silane (SiH4), accompanied by CO and CO2. Under thermal field, the main products are CH2O, CH4, hexamethylcyclotrisiloxane (D3), and octamethylcyclotetrasiloxane (D4), along with oxidative gases such as CO2. Molecular simulations revealed differences in microscopic decomposition pathways. A normalized infrared spectral database was also established based on DFT calculations. Overall, this work links macroscopic gas-evolution behavior with microscopic mechanisms and diagnostic applications. It systematically elucidates the decomposition behavior of SiR under electric and thermal fields and provides a theoretical foundation for gas-infrared-based fault diagnosis in cable accessories.
To investigate this phenomenon, previous studies have used thermogravimetric analysis (TGA),6 Fourier transform infrared spectroscopy (FTIR), gas chromatography-mass spectrometry (GC-MS), and scanning electron microscopy (SEM) to analyze the gas-evolution behavior of SiR under electric and thermal fields.7,8 Most of these studies have focused on the analysis of gas evolution during thermal decomposition. In contrast, investigations on gas generation under electric field remain scarce. Comparative studies of electrical breakdown-induced decomposition versus thermal decomposition are particularly rare, and the differences in gas evolution under these conditions have not been fully explored. Although typical gaseous products such as CH2O and cyclic siloxanes generated during thermal decomposition have been identified,9,10 the intrinsic relationship between molecular chain scission pathways and gas formation remains unclear. Consequently, current diagnostic techniques are still limited in their ability to elucidate the underlying mechanisms of SiR decomposition.
Previous studies have shown that the decomposition behavior of SiR is strongly influenced by both electric and thermal field conditions. In most reports, the thermal decomposition process is divided into three temperature stages. The low-temperature stage occurs below 350 °C and is characterized by surface moisture evaporation. The medium-temperature stage, between 350 °C and 450 °C, involves side-chain scission. The high-temperature stage, above 450 °C, is where the maximum weight loss occurs. This is due to extensive bond cleavage and recombination.11 However, this coarse classification does not fully capture the complexity of SiR decomposition under real service conditions. Moreover, most existing studies have been limited to single thermal effects, and systematic investigations of decomposition mechanisms under coupled electro-thermal fields remain scarce.
ReaxFF molecular dynamics simulations have shown that high-temperature thermal degradation of SiR mainly generates CH4, small-ring cyclosiloxanes, and methyl radicals as gaseous products.12–17 However, these simulation results differ significantly from those obtained by dissolved gas analysis (DGA). DGA primarily detects gases dissolved in liquid insulating oils,18 whereas SiR is a solid material whose decomposition products are mainly solid SiO2.19 The characteristic gases detected by the two methods also differ considerably.
In addition, some studies on other polymer systems have used the electron force field (EFF) to model discharge-induced decomposition.20 The method is accurate at the microscopic level, but it is computationally expensive. It scales poorly for large polymer systems and is difficult to extend to engineering applications. To address this limitation, researchers have introduced charge transfer with polarization current equalization (QTPIE). QTPIE represents intramolecular charge distribution and equilibration under external electric fields more accurately. It provides a new route to probe decomposition mechanisms of polymers under complex electro-thermal conditions and helps overcome the limitations of conventional methods in large-scale simulations.
Accordingly, this work combines experiments with molecular simulations to investigate the gas-evolution behavior of SiR under various electric and thermal field conditions. A normalized infrared spectral database of characteristic gases is established. And reveal the generation rules of gas products under different environmental conditions.
The instruments used in this study were as follows: Fourier transform infrared spectrometer (FTIR, Nicolet 6700, Thermo Fisher Scientific, USA); thermogravimetric analyzer (TGA, Pyris, PerkinElmer, USA); and gas chromatograph (GC, GC112N, Shanghai Analytical Instrument Co., China).
In the TG-IR experiments, the sample temperature was increased under programmed control using the thermogravimetric analyzer. Volatile products released during decomposition were continuously monitored by the FTIR spectrometer. The tests were conducted in air and argon atmosphere, with the temperature range set from 50 °C to 800 °C and a heating rate of 50 °C min−1. GC experiments were carried out by placing 0.1 g of SiR in a gas washing bottle, with the temperature precisely controlled by an electric heater. After gas generation, the gaseous products were qualitatively and quantitatively analyzed using a gas chromatograph equipped with a molecular sieve column and an alumina column, with detection performed by FID and TCD, respectively. In the muffle furnace experiments, when the temperature exceeded 400 °C, 0.02 g of SiR was loaded into an alumina threaded crucible and heated to produce gases; the released products were collected in a sealed plastic bag equipped with a gas valve and subsequently analyzed by GC under the same conditions. Prior to quantitative measurements, a seven-component mixed standard gas was used for calibration to ensure the accuracy of concentration determination. All GC-derived gas concentrations were normalized to the sample mass by dividing the measured concentration of each component by the corresponding sample amount, and the results were finally expressed as gas concentration per gram of sample.
In the thermal decomposition simulations, the system was gradually heated to 1500 K under a constant-volume, constant-temperature (NVT) ensemble, where 1500 K was adopted as an “accelerated condition” rather than the actual decomposition temperature to speed up the decomposition process.24 Temperature control was achieved using a Berendsen thermostat with a damping constant of 25 fs to promote chain scission and structural rearrangement. For the electric field simulations, the QTPIE method was used to achieve dynamic charge equilibration. An external electric field of 3 kV mm−1 was applied to the two ends of the simulation box to enhance molecular polarization and facilitate chain breakage. Both the single-chain and folded-chain models were simulated. The single-chain model was used to analyze the microscopic mechanisms of small-molecule generation, whereas the folded-chain model, being closer to real systems, allowed statistical analysis of the yields of characteristic gaseous products. The molecular structural evolution during decomposition was visualized using Open Visualization Tool (OVITO), and the formation trends of key products were quantified.
The gas release during SiR decomposition was obtained from the molecular dynamics (MD) simulations. Vibrational analyses based on density functional theory (DFT) were then performed. These analyses calculated the vibrational modes and infrared absorption frequencies of the characteristic gases. These calculations were carried out in Gaussian at the B3LYP/def2-SVP level of theory.25 Because the harmonic approximation and the solution of the Schrödinger equation introduce systematic errors,26 the predicted IR frequencies are typically higher than the experimental fundamentals. Following the literature,27,28 a scaling factor of 0.9671 was applied to correct the calculated frequencies. The spectra were then Gaussian-broadened using the Multiwfn program to achieve better agreement with the experimental data.
C bonds, thereby reducing the yield of C2H2.
Moreover, H2 radicals generated during discharge can react with silicon atoms to form Si–H-containing species, such as silane (SiH4). Although cyclic siloxanes are important monomeric units of SiR, their yields were low under breakdown conditions because the reaction was extremely rapid and chain rearrangement was limited. As a result, their FTIR characteristic bands were weak (Fig. 3).
To more intuitively illustrate the effects of atmosphere and temperature on the gas-evolution behavior, three-dimensional FTIR spectra (Fig. 5) and GC chromatograms (Fig. 6) were acquired under both air and argon atmospheres, and several representative temperatures were selected for analysis in conjunction with the TG curves. The results show that, below the onset decomposition temperature in argon atmosphere, only H2O and trace amounts of CO2 are detected, indicating that the material structure remains largely unchanged. At the decomposition temperature, small amounts of CH4 and CO2 appear in the products. As the temperature increases above the decomposition threshold, the signals associated with Si-containing groups (e.g., Si–CH3, Si–O–Si, Si–(CH3)2) become more pronounced,30–33 suggesting that the cleavage and rearrangement of the structural units in SiR are significantly intensified at elevated temperatures. Previous studies have shown that, at high temperatures, these structural units can undergo scission and cyclization to form low-molecular-weight cyclic siloxanes such as hexamethylcyclotrisiloxane (D3) and octamethylcyclotetrasiloxane (D4).34–39
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| Fig. 5 Three-dimensional IR spectra of the gas release during thermal decomposition of SiR in (a) air and (b) argon atmospheres. | ||
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| Fig. 6 Gas chromatography results of SiR gas production at different temperatures in (a) argon 100–350 °C, (b) argon 405–450 °C, (c) oxygen 100–250 °C, and (d) oxygen 300–400 °C atmospheres. | ||
000 ps), the SiR network was almost completely degraded, resulting in the generation of large quantities of small-molecule gases. The strong agreement between simulation and experimental results further validated the accuracy of the molecular dynamics approach. It should be noted that although 1500 K is much higher than the actual decomposition temperature, this condition is mainly employed to accelerate the reaction process and to elucidate the decomposition mechanism and relative trends, rather than to directly extrapolate absolute rates or service lifetimes.40
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| Fig. 7 Snapshots of gas formed during simulation for SiR, (a) under electric field condition; (b) under thermal condition. | ||
Unlike electrical breakdown, the thermal decomposition of SiR favored high-temperature rearrangement. The ReaxFF-based MD simulations were further used to investigate this process. As shown in Fig. 7(b), at the early stage (25 ps), side chains were cleaved first, producing free radicals that provided the basis for subsequent high-temperature reactions. By 675 ps, the main chain began to disintegrate, and some fragments underwent rearrangement, producing H2 and CH4. This observation agrees well with the CH4 characteristic peaks detected in the FTIR spectra. At 4175 ps, elevated temperature promoted further scission and rearrangement of the siloxane backbone, leading to the formation of cyclic siloxanes such as D4, which are typical products of thermal decomposition, together with a certain amount of CO. By 25
000 ps, the reaction approached completion. The residual structure was dominated by Si–O–Si linkages, with only trace amounts of CH4 and CO present. This result is consistent with the experimental observation of strong Si–O–Si characteristic peaks and weak small-molecule peaks.
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| Fig. 9 Decomposition mechanisms of SiR under (a) thermal field and (b) electric field, illustrating incremental gas production under anaerobic and aerobic environments. | ||
Under the action of the electric field, the SiR molecular chains undergo pronounced scission, and methyl side groups are detached from the backbone to form radicals, which subsequently recombine to yield small molecules such as CH4 and C2H2. With increasing discharge intensity, chain scission becomes more severe, and hydrogen radicals generated during the discharge react with silicon to form Si–H-containing species, such as SiH4.
In an oxygen-containing atmosphere, the synergistic effect of discharge and oxygen further enhances chain scission and radical generation, thereby promoting the formation of CH4 and Si–H-containing compounds. Meanwhile, the participation of oxygen facilitates the cleavage or transformation of C
C bonds, leading to a decreased yield of C2H2. In addition, owing to the extremely short duration of breakdown, chain rearrangement is limited, so the conditions for the formation of cyclic siloxanes are not fully met, resulting in a relatively low yield of cyclic siloxanes. Overall, the decomposition of SiR under an electric field is dominated by chain scission and radical formation, which gives rise to multiple small-molecule gaseous products, particularly CH4 and C2H2, whereas the formation of cyclic siloxanes is comparatively suppressed.
C bonds and the formation of Si–H compounds. Compared with thermal decomposition, electrical decomposition produces a more diverse range of gaseous species and larger overall amounts of gas. These differences in degradation mechanisms and products highlight the intrinsic distinction between the chemical pathways of electrical and thermal decomposition (Table 1).
| Thermal decomposition | Electrical decomposition | |
|---|---|---|
| Reaction mechanism | Thermally induced chain breakage/rearrangement | Electrothermal coupling chain breakage/free radical generation |
| Reaction products | CO2, CO, CH4, D3, D4 | CH4, C2H2, SiH4 |
| Influencing factors | Temperature | Electric field and temperature |
(1) Under pure thermal conditions, SiR primarily decomposed to produce CH2O, CH4, and Si-containing organics such as D3 and D4, accompanied by a certain amount of oxidative products such as CO2. Under electric field, the characteristic gases were dominated by C2H2, CH4, and Si-containing compounds such as SiH4, along with small amounts of CO and other oxidizing molecules. This composition indicates a discharge gas-evolution behavior characterized by low-molecular-weight and highly reactive Si-containing species.
(2) Reactive MD simulations based on ReaxFF revealed the microscopic decomposition mechanisms of SiR under thermal and electric fields. Under thermal conditions, weak bonds such as –CH3 were cleaved first. Free radicals subsequently accumulated and recombined, eventually causing the cleavage of the Si–O–Si backbone and the formation of small cyclic siloxanes. Under electric field, initial scission also occurred at weak bonds. As the applied voltage increased, deeper chain cleavage and unsaturation took place, leading to the generation of CH4 and SiH4. However, because the breakdown duration was extremely short, chain rearrangement was insufficient and the yield of cyclic siloxanes was limited. These simulation results were highly consistent with the experimental trends, providing molecular-level insight that is difficult to obtain directly from experiments. Overall, electric field promoted chain scission, whereas thermal field favored structural rearrangement.
(3) The presence of oxygen significantly promoted molecular chain scission and radical reactions, whereas in an inert atmosphere the decomposition proceeded mainly through thermal pyrolysis.
A preliminary FTIR spectral library of characteristic gaseous products from SiR decomposition was established, and an IR-based diagnostic method was proposed. These results provide a technical pathway for gas-phase IR spectroscopy in aging assessment and fault diagnosis of high-voltage cable accessories. This approach is expected to play an important role in early fault warning and diagnosis, thereby reducing the risks of power outages and fire accidents.
Supplementary information (SI): detailed information regarding the experimental procedures and analysis results of the study. Specifically, it includes: S1 (details of the electrical decomposition experiments): detailed parameters for the electrical decomposition experiments, including the gas collection setup, step-by-step voltage increase, measured breakdown voltages in air and argon, discharge duration, and an estimation of the discharge energy for various electrode spacings (presented in Table S1 1). S2 (comparison of thermal and electric decomposition mechanisms): a comparative summary (in Table S2 2) detailing the differences in the reaction mechanisms, main reaction products, and influencing factors between the thermal and electrical decomposition of Silicone Rubber (SiR). S3 (gas products from thermal decomposition of SiR): infrared (IR) spectra (Fig. S1 3) of the gases released during the thermal decomposition of SiR at key characteristic temperatures (100 °C, 200 °C, 300 °C, 370 °C, 615 °C, and 754 °C) in both air and argon atmospheres. See DOI: https://doi.org/10.1039/d5ra07405c.
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