Open Access Article
Jiaze Wang†
ab,
Tongbin Zhang†ab,
Xiaoyan Liu
*ab,
Lili Yang
ab,
Jian Cao
ab,
Qiong Wuab,
Fengyou Wangab,
Yanli Chenab,
Xin Li*ab and
Maobin Wei*ab
aKey Laboratory of Functional Material Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun 130103, PR China. E-mail: liuxiaoyan1437@163.com; xlwl@jlnu.edu.cn; jlsdzccw@126.com
bNational Demonstration Center for Experimental Physics Education, Jilin Normal University, Siping 136000, PR China
First published on 22nd October 2025
To address the challenges of easy agglomeration, inadequate adsorption capacity, and low electron separation efficiency of pure ZnIn2S4 during the CO2 photoreduction process, a novel 3D/0D ZnO/ZnIn2S4 S-scheme heterojunction was fabricated by growing ZnIn2S4 nanoparticles (NPs) in situ on the surfaces of ZnO nanoflowers (NFs). By regulating the loading amount of ZnIn2S4 NPs, ZnO/ZnIn2S4 composites with high catalytic activity were obtained. The optimal performance was observed for the sample ZZ8 (ZnIn2S4
:
ZnO = 8
:
100 molar ratio), achieving the maximum CO2 photoreduction rates. Under 4 h UV-vis light irradiation, ZZ8 produced CO and CH4 of 149.38 μmol g−1 and 94.39 μmol g−1, respectively, corresponding to 3.44 times and 5.51 times the rates of pure ZnIn2S4. The optimal ZnIn2S4 loading significantly expanded ZZ8's effective adsorption area and pore structure, enhancing CO2 adsorption, activation and reactant diffusion. Concurrently, Zn–In bimetallic sites markedly boosted CO2 adsorption and activation capacity, inducing a synergistic catalytic effect. After 10 reaction cycles, the CO production rate remained above 85%, indicating excellent photostability of ZZ8. Comprehensive analysis confirmed an S-scheme electron transfer pathway in the ZnO/ZnIn2S4 composite during CO2 photoreduction, enabling efficient spatial separation of photogenerated charges. This study effectively optimized the photocatalytic performance of the material through morphology control and the construction of an S-scheme heterojunction. It provides a theoretical basis and a technical pathway for the rational design of other 3D/0D S-scheme heterojunction photocatalytic materials (e.g., ZnO/g-C3N4, ZnO/MoS2).
O bonds.
Zinc indium sulfide (ZnIn2S4), as a bimetallic sulfide, possesses advantages such as a tunable band gap (2.06–2.85 eV), strong visible-light responsiveness, controllable morphology, high chemical stability, and low toxicity, making it an ideal semiconductor material for photocatalytic CO2 reduction.8–10 However, the single-component ZnIn2S4 semiconductor suffers from issues such as easy agglomeration, high recombination rate of surface photogenerated carriers, inadequate CO2 adsorption and activation capabilities, and limited visible-light response range, resulting in low photocatalytic activity and hindering its practical applications. To address these issues, researchers have developed multiple optimization approaches, including morphology modulation, defect engineering, ion doping, surface plasmonic modification, and heterostructure construction.11–14 Among these, constructing heterojunctions is a highly promising solution. Selecting suitable semiconductor materials can not only enhance the dispersion of the host material, expose more active sites, and broaden the spectral response range, but also facilitate the efficient spatial separation of photogenerated carriers.
In recent years, the construction of S-scheme heterojunctions, which combine a reduction photocatalyst (RP) and an oxidation photocatalyst (OP), has become a well-established effective strategy. Under illumination, this architecture facilitates interfacial recombination between CB's electrons of the lower Fermi level (Ef) semiconductor and VB's holes of the higher Ef semiconductor through the built internal electric field (IEF) and induced band bending. This unique charge transfer mechanism effectively inhibits the carrier recombination within the individual component while retaining high-energy electrons and holes.5,15 Consequently, it can simultaneously fulfill the requirements for both oxidation and reduction reactions. We have successfully loaded 2D RP ZnIn2S4 nanosheets onto 2D OP WO3 nanosheets for efficient CO2 photoreduction. This unique 2D/2D S-scheme heterostructure can form intimate interfacial contact, effectively promoting interfacial charge transfer.16 Therefore, the selection of RP and OP semiconductor materials, which possess specific nanostructures, matched band structures, and appropriate Ef positions, is critical to constructing high-efficiency S-scheme nanocatalysts.
Zinc oxide (ZnO), as a typical OP semiconductor photocatalyst, is extensively applied in photocatalysis, benefiting from its non-toxicity, morphological diversity, low cost, environmental compatibility, and strong oxidation ability.17–19 However, the inherent wide bandgap property of ZnO (∼3.37 eV) severely limits its light absorption range (utilizing only 3–5% of the solar spectrum), leading to poor solar energy utilization.20–22 ZnIn2S4 and ZnO share the same metal element (Zn) and exhibit well-matched band structures. When the two are combined, it is expected to form an intimate interfacial contact and an S-scheme charge transfer pathway, thereby broadening their spectral response range and enhancing their photocatalytic activity. On the other hand, 3D hierarchical micro-nano oxide structures, constructed from building blocks such as nanoparticles, nanorods, or nanosheets, have garnered significant scientific interest owing to their unique structural configurations and tunable material properties (e.g., low agglomeration, high specific surface area, well-ordered porous structure).23,24 These characteristics endow them with promising application prospects in the field of photocatalysis.
Herein, hierarchical 3D flower-like ZnO nanostructures assembled from tightly interwoven nanosheets were prepared via a solvothermal method. Subsequently, 0D ZnIn2S4 nanoparticles (NPs) were in situ grown onto the ZnO nanoflowers (NFs), resulting in a 3D/0D ZnO/ZnIn2S4 S-scheme heterojunction. This unique structure not only effectively suppresses the agglomeration of ZnIn2S4 NPs but also maximally exposes their photoreduction sites, thereby enhancing their CO2 adsorption capacity and achieving efficient spatial separation of photogenerated charge carriers. Under UV-vis irradiation, the ZZ8 sample exhibited significantly enhanced CO and CH4 production rates compared to pure ZnO and ZnIn2S4. The S-scheme charge transfer mechanism was systematically elucidated through comprehensive photoelectrochemical and spectroscopic characterization. Additionally, in situ FTIR spectroscopy was employed to probe the reaction pathway of photocatalytic CO2 reduction.
The detailed testing procedures, instrument models and manufacturers are provided in the SI.
:
ZnO = 6
:
100). Using identical synthesis parameters while varying precursor ratios, we fabricated a series of composites with ZnIn2S4 NPs loadings of 8%, 10%, and 12% (ZZ8, ZZ10, ZZ12 corresponding to molar ratios 8
:
100, 10
:
100, 12
:
100). The complete fabrication workflow is illustrated in Scheme 1.
For comparative analysis, pure ZnIn2S4 was synthesized using identical reaction conditions in the absence of ZnO.20
XPS analyses were performed on ZnO, ZnIn2S4 and ZnO/ZnIn2S4 composites to examine their surface elemental chemical states and atomic compositions. All spectra were calibrated against the C 1s reference peak (284.8 eV).28 Full survey spectra verify the presence of Zn, O, In, and S in sample ZZ8 without detectable impurities (Fig. S2), confirming the successful deposition of ZnIn2S4 onto ZnO. The Zn 2p high-resolution spectrum of pure ZnO (Fig. 1(c)) shows peaks at 1044.58 eV (Zn 2p1/2) and 1021.52 eV (Zn 2p3/2), characteristic of Zn2+.12 In contrast, pure ZnIn2S4 exhibits Zn 2p1/2 and Zn 2p3/2 peaks at 1044.91 eV and 1021.85 eV, respectively. The Zn 2p peaks of ZZ8 composite exhibit noticeable asymmetry and can be deconvoluted into two distinct peaks, indicating different electronic environments around Zn atoms in the composite.29 The dominant signals at 1044.49 eV and 1021.49 eV are assigned to Zn2+ in ZnO (2p1/2 and 2p3/2, respectively). Concurrently, lower-intensity peaks at 1045.72 eV and 1022.56 eV arise from Zn2+ in ZnIn2S4.21
The In 3d spectrum of pure ZnIn2S4 (Fig. 1(d)) reveals characteristic In3+ states at 452.36 eV (3d3/2) and 444.79 eV (3d5/2).12 Similarly, S 2p peaks at 162.59 eV (2p1/2) and 161.40 eV (2p3/2) in Fig. 1(e) confirm the S2− chemical state.13 Together with the Zn 2p data, these spectra confirm the successful synthesis of ZnIn2S4. The deconvoluted O 1s spectrum of ZnO (Fig. 1(f)) exhibits peaks at 530.41 eV (lattice oxygen, O–Zn), 532.36 eV (adsorbed oxygen), and 533.92 eV (adsorbed water).26,30 Compared to pure ZnO NFs, the O–Zn peak is suppressed after ZnIn2S4 shell growth. In the photoreduction of CO2 reaction, adsorbed oxygen and water are essential, the increased proportion of them in ZZ8 indicates enhanced redox capacity of the composite material.26 The composite formed between ZnO and ZnIn2S4 exhibits distinct peak shifts compared to its individual components. Compared to pure ZnIn2S4, the characteristic Zn, In, and S peaks in ZZ8 shift marginally toward higher binding energies, indicating reduced electron density in ZnIn2S4. In contrast to pure ZnO, the Zn and O elements in the ZZ8 sample shift toward lower binding energies, indicating that ZnO gains electrons. These observations collectively demonstrate that electrons spontaneously transfer from ZnIn2S4 to ZnO in the composite material under dark conditions.31,32 This reveals strong interfacial coupling and electronic interaction between ZnO and ZnIn2S4, providing crucial experimental evidence for elucidating the charge transfer mechanism in heterostructures.28,33
Surface functional groups and chemical composition were characterized by FTIR (Fig. S3). The spectrum of pure ZnIn2S4 shows broad absorptions at 3430, 1629, and 1397 cm−1, assigned to the vibrational modes of surface-absorbed H2O molecules or hydroxyl groups.34,35 C–H bending (3003–2800 cm−1) and C–N stretching (1171–1016 cm−1) modes are observed. The pure ZnO exhibits two Zn–O vibrational bands between 600–350 cm−1.36 The sample ZZ8 retains these characteristic modes of the individual components, confirming the formation of ZnO/ZnIn2S4 heterostructure at the molecular vibrational level.
SEM and TEM characterization were employed to reveal the sample's microstructure and morphology. Fig. 2(a) shows that the hierarchical 3D flower-like nanostructures of pure ZnO NFs are composed of tightly overlapped and interwoven nanosheets. A locally magnified view (Fig. 2(b)) shows the ZnO nanosheets (NSs) have smooth surfaces and thicknesses of 50–60 nm. Fig. S4(a) displays a nanoflower morphology of pure ZnIn2S4, self-assembled from ultrathin nanosheets. In the SEM image of ZZ8 composite (Fig. 2(c)), ZnIn2S4 exists as tiny nanoparticles attached to the surface of ZnO NSs, while the overall flower-like microstructure of the ZnO NFs remains largely intact. During the in situ synthesis of the nanocomposite, the interaction of Zn2+ and In3+ ions with atoms on the ZnO NFs facilitates the direct growth of ZnIn2S4 NPs on the ZnO NSs.26,37 Consequently, the resulting morphology of ZnIn2S4 in ZZ8 composite differs significantly from that of pure ZnIn2S4. The successful loading of these particulate ZnIn2S4 nanostructures provides abundant catalytically active sites. The intimate contact between ZnIn2S4 NPs and ZnO NSs in ZZ8 is confirmed by the high-magnification SEM (Fig. 2(d)), which shows a roughened nanosheet surface. This interaction creates a coarse, shell-like coating that should facilitate rapid migration of photogenerated charge carriers for enhanced photocatalysis.20
As shown in Fig. S5, the morphology of the composites (ZZ6, ZZ8, ZZ10 and ZZ12) changes significantly with the increasing concentration of ZnIn2S4, accompanied by a rise in the number of particles on the nanosheet surfaces. In the ZZ12 sample, the ZnO nanoflower structure is almost entirely covered by ZnIn2S4 NPs, and the original morphology becomes indistinguishable. The excessive ZnIn2S4 coverage can block the active sites and hinder the access of light and reactants to the ZnO/ZnIn2S4 interface. This morphological evolution provides critical evidence for establishing the structure–property relationship of the materials. The EDS spectrum of ZZ8 (Fig. S6(a)) further confirms the presence of Zn, O, In, and S elements in the composite. Additionally, the homogeneous distribution of these constituent elements throughout the composite, evident from the elemental mapping in Fig. 2(e), indicates that the two semiconductor materials are intimately integrated.14,27,38 This optimized interfacial structure is anticipated to enhance charge separation, thereby boosting photocatalytic performance.
The morphological features observed by SEM are further verified in the corresponding TEM images (Fig. 3(a, c) and S4(b)) for pure ZnO, pure ZnIn2S4, and ZZ8. Notably, Fig. 3(b) reveals the exceptionally smooth nanosheet surfaces of pure ZnO NFs. The well-ordered lattice fringes with a measured spacing of 0.26 nm are visible in the HRTEM image (the inset of Fig. 3(b)), consistent with the ZnO (002) plane.39 As seen in Fig. S4(c), pure ZnIn2S4 exhibits poor crystallinity, with lattice fringes measuring 0.32 nm corresponding to its (102) plane.26 Significant changes in brightness contrast can be observed in the HRTEM image of the ZZ8 composite (Fig. 3(d)), which confirms that ZnIn2S4 NPs have anchored onto ZnO NSs, forming a rough surface. The average particle size of ZnIn2S4 NPs is approximately 5 nm (Fig. S6(b)). The coexisting 0.26 nm (ZnO (002)) and 0.32 nm (ZnIn2S4 (102)) lattice fringes in Fig. 3(d) unambiguously verifies the formation of the ZnO/ZnIn2S4 heterojunction interface. These findings are consistent with the XRD and XPS results, confirming the effective formation of the ZnO/ZnIn2S4 heterojunction.
Furthermore, the utilization rate (R) of photogenerated electrons can directly reflect the sample's photoreduction capability for CO2.41 ZZ8 shows a calculated electron utilization rate of 263.48 μmol g−1 h−1 (Fig. 4(c)), significantly higher than those of pure ZnO (29.40 μmol g−1 h−1) and ZnIn2S4 (55.98 μmol g−1 h−1). This substantial enhancement further evidences ZZ8's superior CO2 photoreduction performance. Based on the yields, the product and electron selectivity for CO and CH4 of the samples were calculated (Fig. S7(a and b)).42 The ZZ8 composite exhibits a notable enhancement in CH4 selectivity, confirming that the ZnO/ZnIn2S4 heterojunction effectively facilitates charge transfer. This process increases the surface electron density, which promotes the protonation of reaction intermediates and ultimately leads to higher CH4 selectivity. As shown in Fig. S7(c) and Table S2, the apparent quantum efficiency (AQE) of the ZZ8 composite is about 3.03% at 360 nm, 0.28% at 420 nm, 0.07% at 500 nm, 0.06% at 550 nm, respectively. This wavelength-dependent trend in AQE correlates with the light absorption edge of ZZ8, confirming that the CO2 reduction is a light-driven process.43 To identify the carbon source in reduction products, control experiments were operated under three conditions: (i) without light, (ii) without catalyst, and (iii) replace CO2 with Ar. The null product detection in control experiments (Fig. S7(d)) establishes catalyst-driven CO2 photoreduction as the exclusive origin of carbon-based products. As stability evaluation is essential for photocatalyst assessment, ZZ8 underwent ten cyclic CO2 reduction tests (Fig. S8(a)). Between runs, the reaction system was thoroughly cleaned and the recovered catalyst was degassed. After ten consecutive cycles, the CO production rate decreases only marginally from 149.38 to 129.57 μmol g−1. The XRD, XPS and SEM analyses (Fig. S8(b–d)) reveal no significant changes in the crystalline structure, element composition or morphology of ZZ8 after 10 runs.44,45 These results confirm the concurrent achievement of exceptional photostability and high catalytic activity in the ZZ8 composite.
To elucidate the role of the surface structural characteristics in photocatalytic performance, we conducted N2 and CO2 adsorption–desorption analyses. The N2 adsorption–desorption isotherms were used to determine the specific surface areas and pore size distributions (Fig. 4(d–f) and S9).46 Pure ZnO, ZnIn2S4, and ZZ8 all exhibit IV-type isotherms with H3-type hysteresis loops. ZnO displays typical mesoporous characteristics, while ZnIn2S4 and the ZZ8 composite show hierarchical porous structures combining mesopores and macropores.27 According to Brunauer–Emmett–Teller (BET) measurements (Table S3), a specific surface area of 87.48 m2 g−1 is achieved for the optimized ZZ8 composite, representing 5.82-fold and 1.95-fold increases compared to pure ZnO (15.04 m2 g−1) and ZnIn2S4 (44.96 m2 g−1), respectively. The significantly enhanced specific surface area not only provides more active sites for photocatalytic reactions but also substantially improves the transport efficiency of photogenerated charge carriers during redox processes.47 This further promotes CO2 capture and activation, thereby greatly enhancing the photocatalytic performance of the material. Additionally, ZZ8 demonstrates a significantly improved pore volume (0.32 cm3 g−1) compared to its individual components. This hierarchical porous structure provides an ideal three-dimensional mass transfer pathway for reactant diffusion and accessibility to active sites.
From the CO2 adsorption–desorption isotherms (Fig. 4(g)), the ZZ8 composite demonstrates a significantly enhanced CO2 capture capability compared to pure ZnO and ZnIn2S4. When the pressure was restored to ambient conditions, the adsorbed CO2 molecules were not completely desorbed, confirming that a large amount of CO2 was strongly bound and retained on the catalyst surface. The net CO2 adsorption capacity of ZZ8 was calculated to be approximately 1.29 cm3 g−1 (Fig. 4(h)), representing about a 2.22-fold increase over pure ZnO. The superior CO2 capture performance of ZZ8 primarily originates from two aspects: first, the loaded ZnIn2S4 NPs form “nanoscale protrusions” on the surface of ZnO NSs, transforming the originally smooth nanosheets into a three-dimensional interface with subnanometer-scale roughness. This markedly expands the accessible surface area and optimizes the pore structure, resulting in a greater number of exposed catalytic sites that facilitate CO2 capture. Second, the introduction of bimetallic active sites (Zn–In) significantly enhances the material's adsorption and activation capabilities toward the target CO2 molecules, creating a synergistic effect that promotes subsequent catalytic conversion.
To further investigate the surface charge characteristic of the catalyst, zeta potential measurement was conducted to analyze the electrostatic interaction between the components (Fig. 4(i)). The results show that the Zeta potentials of ZnO and ZnIn2S4 in aqueous solution are +22.09 mV and −14.34 mV, respectively. This significant opposite charge distribution provides the driving force for the formation of heterojunction. The deposition of negatively charged ZnIn2S4 onto ZnO NSs will significantly enhance the catalyst's adsorption capability toward the electro-deficient carbon atoms in CO2, thereby improving its CO2 capture capacity. These findings align with the results obtained from the CO2 adsorption–desorption isotherms.
As shown in Fig. 5(c), the PL spectrum of pure ZnO exhibits a distinct intrinsic emission peak at ∼382 nm and a broad defect-related band spanning from 400 to 750 nm. For pure ZnIn2S4, a clear band-edge emission peak is observed around 570 nm.30,52 The intrinsic emission, a signature of radiative free exciton recombination, increases in peak intensity, suggesting an enhanced recombination rate of the photogenerated carriers.53 After the combination of ZnO and ZnIn2S4, the emission peak intensities associated with their individual components in the ZZ8 heterojunction are significantly reduced. This is a clear indication that the heterojunction effectively inhibits the recombination of photogenerated carriers, which in turn boosts the efficiency of electron–hole separation. The improved photocatalytic performance of the ZZ8 composite is directly underpinned by its enhanced charge carrier separation efficiency, consistent with prior experimental data. To further elucidate the dynamics of photogenerated carrier transfer, we systematically analyzed the carrier lifetime (τ) using TRPL spectroscopy. As evidenced by the luminescence decay curves of the samples (Fig. S10) and corresponding carrier dynamics data (Table S4),30,42,46 the average carrier lifetime of the ZZ8 heterojunction was prolonged to 5.11 ns, surpassing those of pure ZnO (4.39 ns) and ZnIn2S4 (3.68 ns). This indicates significantly improved separation and migration efficiency of photogenerated charges across the ZnO/ZnIn2S4 heterojunction interface. These experimental results clearly demonstrate that:(i) an efficient charge transfer pathway has been established between ZnO and ZnIn2S4;(ii) the interfacial electric field effect substantially suppresses the recombination loss of photogenerated carriers. These results offer compelling kinetic evidence for the pivotal role of heterojunction structures in enhancing photocatalytic performance. Subsequently, we employed the LSV test to evaluate the reduction capability of the samples.49,54,55 As illustrated in Fig. 5(d), the ZZ8 composite requires a significantly lower overpotential than pure ZnO and ZnIn2S4 to achieve the same current density, demonstrating that reduction reactions occur more readily on the composite's surface compared to other samples. This characteristic is beneficial for the photoreduction of CO2.
To investigate the light absorption properties of the samples, UV-vis DRS was performed. As shown in Fig. 6(a), pure ZnO exhibits strong light absorption in the ultraviolet region, with its absorption edge located around 400 nm. In contrast, pure ZnIn2S4 displays an absorption edge at approximately 540 nm, indicating its strong visible-light absorption capability. All ZnO/ZnIn2S4 composites exhibit a pronounced red-shift in their absorption edges relative to pure ZnO, which is attributed to the interfacial coupling effect between wide-bandgap ZnO and narrow-bandgap ZnIn2S4. Consequently, loading with ZnIn2S4 significantly broadens the composite's visible-light absorption range, thereby boosting their solar energy harvesting capability. The optical energy bandgaps (Eg) calculated through the Tauc plot analysis (Fig. S11(a)) are approximately 3.15 eV for ZnO and 2.23 eV for ZnIn2S4.30,56,57
![]() | ||
| Fig. 6 (a) UV-vis DRS spectra, (b and c) Mott–Schottky plots, and (d) XPS valence band spectra of the samples. | ||
Furthermore, the energy band structures were investigated by Mott–Schottky and XPS valence band tests. The Mott–Schottky plots (Fig. 6(b and c)) show positive slopes, confirming the characteristic of n-type semiconductors for ZnO and ZnIn2S4. The corresponding flat-band potentials (EFB), derived from tangent fitting, are −0.49 V for ZnO and −1.11 V for ZnIn2S4 (vs. Ag/AgCl). Upon conversion to the standard hydrogen electrode scale, these EFB values are −0.29 V and −0.91 V (vs. NHE), which are assigned as the Ef positions of pure ZnO and ZnIn2S4, respectively.58,59 According to the XPS valence band spectra (Fig. 6(d)), the differences between the VB maxima and Ef are 2.38 eV for ZnO and 1.35 eV for ZnIn2S4, suggesting that their VB maxima are positioned at approximately +2.09 V and +0.44 V (vs. NHE), respectively. Combined with the Eg values (Fig. S11(a)), these VB values are used to calculate the CB minima of ZnO and ZnIn2S4 as −1.06 V and −1.79 V, respectively. Based on these derived energy levels, a schematic band structure diagram for both materials is proposed in Fig. S11(b).
Among the three samples, the ZZ8 composite exhibits the most intense DMPO–˙O2− and DMPO–˙OH ESR signals, indicating the highest yield of reactive radicals. This superior activity stems from the effective coupling between ZnO and ZnIn2S4, which enables directional electron transfer from the CB of ZnO to the VB of ZnIn2S4 across the interface, thereby promoting the separation of photogenerated charges and subsequent radical generation. Such reverse electron transfer enables the effective recombination of useless charges, mainly retaining the photogenerated holes in the VB of ZnO with a higher oxidation potential, while the CB of ZnIn2S4 accumulates strongly reducing electrons. This effective spatial separation of photogenerated electron–hole pairs means that the charges in the ZZ8 composite follow an S-scheme heterojunction mechanism,26 rather than a type-II pathway, thereby exhibiting the strongest photocatalytic CO2 reduction activity.
It is widely recognized that the photocatalytic reduction of CO2 proceeds via a two-stage process, beginning with continuous adsorption and followed by activation. To gain in-depth understanding of its reaction mechanism, we employed in situ FTIR to monitor the formation of intermediates in real time during the photoreduction CO2 process on the ZZ8 catalyst. Dynamic monitoring was performed every 5 min in a pure water system under Xe-lamp irradiation. As shown in Fig. 8(a), the spectra display characteristic peaks at 2343 and 2356 cm−1, consistent with the continuous adsorption of CO2 on the photocatalyst surface. The peak observed at 3370 cm−1 (Fig. S12(a)) indicates the presence of surface OH− species. Meanwhile, the four distinct peaks between 3550 and 3800 cm−1 are identified as adsorbed H2O (Fig. S12(b)).61 These observations indicate the generation of abundant highly active radicals and the presence of H2O molecules during the reaction. As shown in Fig. 8(b and c), the vibrational peaks at 1073/1417/1472/1715/1790, 1396/1621, 1508, and 1731 cm−1 are attributed to HCO3−, b-CO32−, m-CO32−, and c-CO32−, respectively, originating from the reaction of CO2 and H2O. The characteristic peak at 1240 cm−1 arises from the active *CO2− intermediate, while the appearance of the
intermediate at 1339 cm−1 indicated the activation of CO2 through reaction.62,63
![]() | ||
| Fig. 8 In situ FTIR spectra of photocatalytic CO2 reduction over ZZ8 in the regions of (a) 2330–2360 cm−1, (b) 1200–1800 cm−1, (c) 1000–1200 cm−1 and (d) 2075–2080 cm−1. | ||
Additionally, characteristic vibrational peaks of critical intermediates such as COOH* (1362/1518/1576/1632/1680 cm−1), CHO* (1085/1386 cm−1), CH2O* (1095/1265 cm−1), CH3O* (1051/1174/1749 cm−1), and
(1374/1435/1455 cm−1) are detected, confirming the efficient conversion of adsorbed CO2 molecules. Among these, COOH* is a crucial intermediate for the formation of CO and CH4 products from CO2, while
serves as a key intermediate specifically for the formation of CH4.64 The absorption band observed at 2077 cm−1 in Fig. 8(d) corresponds to the CO* intermediate on ZZ8.65 Generally, CO* tends to preferentially desorb and form free CO rather than undergo further protonation to produce CH4, thus leading to higher CO yield than CH4.66 The conversion of CO2 to CH4 is an eight-electron reduction process. Under the influence of the S-scheme charge transfer pathway, a localized electron-rich microenvironment forms on the surface of the reduced semiconductor. This environment not only facilitates multi-electron reactions but also fine-tunes the adsorption strength of key intermediates (such as CO* and CHO*) on the catalyst surface, thereby significantly enhancing the efficiency of CO2-to-CH4 conversion.42,67
Guided by the experimental evidence above, we propose a charge transfer mechanism for the ZnO/ZnIn2S4 composite during CO2 photoreduction in Fig. 9(a). When ZnIn2S4 is loaded onto the ZnO surface, the Fermi level difference thermodynamically drives electron migration from ZnIn2S4 to ZnO, until an equilibrium state is reached. The peak shifts in the XPS spectra (Fig. 1(c–f)) clearly validate this electron migration process. This spontaneous charge redistribution establishes electron accumulation and depletion layers at the ZnO/ZnIn2S4 interface, resulting in an electron-rich (negative) ZnO surface and an electron-deficient (positive) ZnIn2S4 surface. Thus, an intrinsic IEF and the bandgap bonding between the two components are formed.5 Meanwhile, this electron migration causes an upward band bending in ZnIn2S4 and a downward bending in ZnO. Under light irradiation, electrons are photoexcited from the VB to CB in both components, generating holes in their respective VBs. Driven by the IEF and coulombic forces, the photogenerated electrons in ZnO's downward-bent CB migrate toward ZnIn2S4, recombining with the photogenerated holes in ZnIn2S4's upward-bent VB at the interface.28 This selective charge recombination ultimately preserves highly reductive electrons in the CB of ZnIn2S4 and strongly oxidative holes in the VB of ZnO, achieving effective spatial charge separation. Through this S-scheme charge transfer mechanism, the ZnO/ZnIn2S4 composite demonstrates significantly enhanced performance in the CO2 photoreduction.
The possible conversion pathways for CO2 photoreduction over the ZnO/ZnIn2S4 heterojunction are illustrated in Fig. 9(b).5,26,68 The process begins with the adsorption of CO2 and H2O molecules onto the catalyst surface, leading to the formation of distinct adsorbed structural units. Here, ZnIn2S4 in the composite interacts strongly with the carbon atom of CO2 through its exposed bimetallic sites, effectively weakening the C
O double bond. Subsequently, under photoexcitation, the photogenerated electrons and holes cooperatively drive a multi-step proton-coupled electron transfer process. This process gradually reduces CO2 molecules through intermediates such as COOH*, CO*, CHO*, CH2O*, CH3O*, CH3OH*, and
, ultimately yielding CO and CH4.
The relationship between the photocatalytic CO2 reduction performance and the BET specific surface area is shown in Fig. 9(c). The yields of CO and CH4 exhibit a strong correlation with the BET specific surface area. As the loading amount of ZnIn2S4 increases, the BET specific surface area of the material gradually expands, thereby enhancing the CO2 photoreduction performance of the ZnO/ZnIn2S4 composite. This can be mainly attributed to the larger specific surface area providing more adsorption sites and reaction sites for CO2.11,69 However, when an excessive amount of ZnIn2S4 is loaded, it blocks the material pores, leading to a reduction in the BET specific surface area and consequently a decrease in photocatalytic activity.
Fig. 9(d) illustrates the relationship between the photocatalytic CO2 reduction performance and the average lifetime of photogenerated carriers. It can be observed that the ZZ8 sample exhibits the longest carrier lifetime and accordingly achieves the highest yields of CO and CH4.70 An appropriate loading of ZnIn2S4 effectively facilitates the separation of photogenerated electron–hole pairs in the ZnO/ZnIn2S4 composite, thereby prolonging the carrier lifetime and enhancing the photocatalytic CO2 reduction activity.
Footnote |
| † The authors have the equal contribution to the manuscript. |
| This journal is © The Royal Society of Chemistry 2025 |