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Correction: Monolithic green-sensitive photodetectors enabled by a ZnSnN2/GaN nanorods/silicon double heterojunction
Jeong Hyeon
Kim
ab,
Juchan
Hwang
ac,
Soon Joo
Yoon
ae,
Jongmin
Kim
f,
Yoon Kyeung
Lee
ae,
Kwangwook
Park
*acd and
Han Eol
Lee
*abc
aDivision of Advanced Materials Engineering, Jeonbuk National University, Jeonju-si 54896, Republic of Korea. E-mail: haneol@jbnu.ac.kr
bDepartment of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonju-si 54896, Republic of Korea
cDivision of Electronics and Information Engineering, Jeonbuk National University, Jeonju-si 54896, Republic of Korea
dHydrogen and Fuel Cell Research Center, Jeonbuk National University, Jeonju, 54896, Republic of Korea
eDepartment of Nano Convergence Engineering, Jeonbuk National University, Jeonju, 54896, Republic of Korea
fDivision of Device Technology, Korea Advanced Nano Fab Center (KANC), Suwon, 16229, Republic of Korea
First published on 19th February 2025
Abstract
Correction for ‘Monolithic green-sensitive photodetectors enabled by a ZnSnN2/GaN nanorods/silicon double heterojunction’ by Jeong Hyeon Kim et al., Inorg. Chem. Front., 2025, https://doi.org/10.1039/d4qi02418d.
The authors regret that the images for Fig. 4 and 5 were duplicated in the original manuscript, while the figure captions were correct. The correct version of Fig. 5 is presented here.
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| Fig. 5 (a) Schematic illustration of the DH-PD with the ZNT/GaN NRs/Si structure. (b) Operation properties of DH-PD. (c) The results of light-detecting selectivity of the DH-PD. (d) The performance test results of the DH-PD. | ||
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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