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Correction: Fabrication of nanoporous anodized aluminum oxide based photonic crystals with multi-band responses in the vis-NIR region
Mengqi
Li
a,
Chao
Feng
*a,
Liye
Zhu
abc and
Yan
Zhao
*abc
aSchool of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, P. R. China. E-mail: fengchaoholy@bjut.edu.cn; zhaoyan@bjut.edu.cn
bKey Laboratory of trans-scale Laser Manufacturing Technology, Ministry of Education, Beijing 100124, P. R. China
cBeijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, P. R. China
First published on 19th February 2025
Abstract
Correction for ‘Fabrication of nanoporous anodized aluminum oxide based photonic crystals with multi-band responses in the vis-NIR region’ by Mengqi Li et al., Nanoscale, 2025, 17, 4099–4110, https://doi.org/10.1039/D4NR04744C.
The authors regret a mistake in the caption of Fig. 2 in the original article, where the value N = 2 should be replaced by N = 20, and “the cross-sectional SEM images” should be “the planar images”. The corrected figure caption is as shown below.
 | ||
| Fig. 2 Characterization of the layered structure of the AAO-based PC. Cross-sectional SEM images of the AAO-based PC synthesized with (a) varied τH (180 s, 240 s, 300 s, 360 s, 420 s) & constant τL = 480 s and (b) varied τL (240 s, 300 s, 360 s, 420 s, 480 s) & constant τH = 360 s. (Note: UH = 40 V, UL = 20 V, and N = 20, (a-vi) and (b-vi) and the insets show the planar images and the distribution diagram of the pore size synthesized under constant voltage for 5 h). (c) Line plot of the UH pulse duration related to pore-layer thickness. (d) Line plot of the UL pulse duration related to pore-layer thickness. (The solid lines and dashed lines indicate the experimental values and fitted values, respectively.) | ||
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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