Irene
Villa
*a,
Roberta
Crapanzano
a,
Silvia
Mostoni
ab,
Anne-Laure
Bulin
c,
Massimiliano
D'Arienzo
ab,
Barbara
Di Credico
ab,
Anna
Vedda
a,
Roberto
Scotti
abd and
Mauro
Fasoli
a
aDepartment of Materials Science, University of Milano-Bicocca, Via Cozzi 55, Milano, I-20125, Italy. E-mail: irene.villa@unimib.it
bINSTM, University of Milano-Bicocca, Via Cozzi 55, Milano, I-20125, Italy
cUniversity Grenoble Alpes, Inserm U1209, CNRS UMR5309, Cancer Targets and Experimental Therapeutics Team, Institute for Advanced Biosciences, Grenoble 38000, France
dInstitute for Photonics and Nanotechnologies-CNR, Via alla Cascata 56/C, Povo (TN) 38123, Italy
First published on 8th January 2025
Hybrid nanoscintillators, which feature a heavy inorganic nanoparticle conjugated with an organic emitter, represent a promising avenue for advancements in diverse fields, including high-energy physics, homeland security, and biomedicine. Many research studies have shown the suitability of hybrid nanoscintillators for radiation oncology, showing potential to improve therapeutic results compared to traditional protocols. In this work, we studied SiO2/ZnO nanoparticles functionalized with porphyrin as a photosensitizer, capable of producing cancer cytotoxic reactive oxygen species for possible use in radio-oncological therapeutics. Radioluminescence measurements under increasing energy of the ionizing radiation beam up to 10 keV show sensitization of porphyrin moieties on SiO2/ZnO. This can be attributed to an increase in energy deposition promoted by the ZnO nanoparticles, which have a higher density and atomic number. This assumption was confirmed by computational simulations of energy deposition after the first interaction of ionizing radiation with SiO2, ZnO, and air. Indeed, Monte Carlo simulations evidence that, despite a decrease in the absolute number of X-rays interacting within the system while increasing the energy of the beam, at 10 keV, the presence of ZnO is dominant to enhance energy deposition. Hence, these experimental and computational studies evidence the importance of each hybrid nanosystem component in the scintillation process. This work shows how an appropriate choice of constituents, in terms of physicochemical properties and architecture, can favour energy deposition mechanisms under X-ray irradiation and thus can boost the hybrid nanosystems' performance for diverse biomedical scintillation-based applications.
Although many authors have demonstrated the great outcomes of X-PDT deriving from the exploitation of dense hybrid nanosystems, the interplay among the diverse mechanisms likely to excite the PS under ionizing radiation remains a matter of debate. In fact, for hybrid NS-triggered X-PDT, ionizing radiations may interact either with the high Zeff NPs or with the biological surroundings. When interacting with high Zeff NPs, secondary energetic ionized charges are created with travel distances that exceed the nanometric scale. Thus, parts of these ionized charges escape from the NP. How the charges deposit energy within the NPs and the surrounding biological medium is crucial since it can affect the therapeutic dose and the ROS generation by activating nearby PS. It is worth mentioning that the fraction of energy deposited in the NPs varies with their density, Zeff and their size, together with the energy of the incoming beams.18,22,30–32 The complexity of this picture denotes the urgency of an accurate investigation of the energy deposition and scintillation mechanisms able to activate organic molecules in hybrid nanosystems towards a more efficient RT and X-PDT. This work focuses on a model hybrid NS made of scintillating high-density ZnO NPs deposited on a SiO2 support (SiO2/ZnO), functionalized with metal-free porphyrin as conventional PS through established SiO2 surface functionalization approaches.33–37 It is worth mentioning that the results obtained in this work on the luminescence properties of bare and porphyrin-functionalized SiO2/ZnO systems are supported and compared to the ones previously described.38,39 However, besides the investigation of the spectroscopic properties, this work also provides a fresh model of the energy deposition mechanisms occurring in the dense core of the hybrid SiO2/ZnO nanosystems. Zinc oxide is an excellent photocatalyst for photodegradation of the highly toxic pollutants in aqueous environments.40 Lately, biocompatible ZnO and ZnO-based systems have been promoted for biomedical applications41–46 and for radiocatalytic activities inducing radiosensitization in RT.47 In this framework, ZnO NP presents an intrinsic greenish emission under optical and X-ray irradiation48,49 that is resonant with the porphyrin absorption, and, thus, it is exploitable for the activation of the X-PDT mechanism. For these reasons, SiO2/ZnO was selected as a model material for this study. We provide a deeper experimental investigation of the RL characteristics of such systems under X-ray irradiations as a function of the energy of the incident beam in the range accessible by our experimental setup. The X-ray energies are in the keV region and the spectroscopic results are related to the compositional features of the systems. The Geant4-based computational modelling is used to estimate the spatial distribution profile of the deposited energy in SiO2/ZnO at increasing energy of the X-rays beam. The combination of experimental techniques and theoretical simulations helps to comprehend the mechanisms of interactions between ionizing radiations and hybrid nanoscintillator. In particular, our findings evidence the critical importance of the presence of dense components, such as ZnO, in the energy deposition process at increasing energies of the X-ray radiation. The consequent increment of energy released can be the key tool to boost the therapeutic activity of NS-based radiation oncology protocols performed with high-energy X-ray beams.
First, spherical SiO2 NPs were synthesized according to ref. 50 by quickly adding tetraethylorthosilicate (TEOS, 0.28 M) to an ethanol solution with water (6 M) and NH4OH (0.40 M). Then, ZnO NPs were grown onto the surface of the so-prepared SiO2 NPs by the hydrolysis and condensation of Zn(CH3COO)*2H2O in a basic ethanol solution.39,51 The final ZnO loading was about 6.6 wt%, indicating that, on average, approximately 215 ZnO NPs were anchored to the available surface of each SiO2 NP. The functionalization step was carried out as reported in ref. 38. The SiO2/ZnO nanosystems were decorated with 0.2 wt% of APTES, used as a surface ligand. This sample was labelled as SiO2/ZnO@APTES. Subsequently, two different concentrations of TCPP were covalently coupled to the SiO2/ZnO@APTES NPs through the APTES amino groups, corresponding to APTES:TCPP molar ratios of 1:
0.1 (SiO2/ZnO@APTES@Porp 0.1%) and 1
:
1 (SiO2/ZnO@APTES@Porp 1%), and to dye loading levels of 0.3 wt% and 2.7 wt%, respectively.
For consistency and reproducibility of the RL experiments, X-ray irradiation was performed only on powder samples. The powders of bare SiO2/ZnO, TCPP-functionalized (at concentrations of 0.1% and 1%) SiO2/ZnO and the pure TCPP porphyrin photosensitizer were placed in an aluminium crucible with dimensions of 8.5 mm diameter and 1 mm height.
The powders of bare and functionalized SiO2/ZnO nanosystems along with the powder of porphyrin moieties were investigated by excitation with X-ray irradiation with increasing average energies (3.3 keV, 6.6 keV, and 10 keV) (Fig. 2) in order to explore the dependence of the RL features with the X-ray energy. All the RL spectra could be fitted in a suitable way by the sum of the same Gaussian components set reported in Table S3.† At least six components were mandatory to count for the ZnO emission in the UV-vis spectral range and for the porphyrin red luminescence. Interestingly, in order to obtain a satisfactory fit of the experimental RL curves of the functionalized SiO2/ZnO, four additional Gaussian components, with negative intensity, were required and peaked in the wavelength spectral range from 500 nm to 600 nm, where the porphyrin absorption Q-bands appeared (vide infra).53 In detail, in Fig. 2a–c (top panels) and S2–S4 (top panels in the ESI†), the RL emission of bare SiO2/ZnO nanosystems is reported. In these spectra, a broad visible emission centred at ∼2.22 eV (563 nm) attributed to ZnO defect centres and a weaker excitonic UV band at ∼3.09 eV (400 nm) appeared, regardless of the X-ray energy. The silica substrate shows only a negligible RL signal at ∼4 eV (310 nm) (Fig. S5†), as already reported in ref. 39 on the similarly synthesized NS. The RL of APTES-functionalized NP presents the same spectral components of SiO2/ZnO, suggesting that the ligand does not introduce new optically active centres. The RL of TCPP-functionalized nanosystems is composed of the ZnO luminescence bands together with the porphyrin-related bands from 1.5 eV (826 nm) to 2 eV (620 nm) (Fig. 2a–c bottom panels, S2–S4 bottom panels), associated with J aggregates, porphyrin monomers, and complexes formed by the released Zn2+ ions and the aromatic central ring of porphyrins.38,54,55 It is worth noticing that the relative intensities among the RL bands in the functionalized samples change according to the TCPP loading level. More specifically, in SiO2/ZnO@APTES@Porp 1%, the RL emission is dominated by the band at 1.7 eV, which is ascribed to the presence of more J-aggregates species with respect to the sample with lower dye concentration. Consistently, the RL spectra of the porphyrin powder (dye content of 100 wt%) feature only the aggregates emission. The detailed description of the RL behaviour of these nanosystems as a function of the TCPP loading level, the spatial distributions between the SiO2/ZnO, and the dye moieties has already been published.38 In the numerical fit of the spectra of TCPP-functionalized SiO2/ZnO, besides the luminescence bands of ZnO, four Gaussian components with negative areas were added to consider the absorption of the porphyrin Q-bands (Fig. S2–S4†). This allowed us to describe the presence of dips in the RL spectra occurring at 2.01 eV (617 nm), 2.2 eV (564 nm), 2.34 eV (530 nm), and 2.5 eV (496 nm) (Fig. 2, bottom panels). These dips suggest a possible re-absorption of the ZnO luminescence by the TCPP porphyrin molecules. Also, the slight disagreement of the cumulative fit with respect to the experimental data in the range above 3 eV can be due to the re-absorption of the ZnO RL by the tail of the porphyrin's Soret band around 3.1 eV (400 nm) that was not included in the numerical fit. Therefore, a radiative ET mechanism partially allows the activation of the red emission of the PS, as previously reported in ref. 38 for identical systems. In general, the experimental and the numerical fit results highpoint that the RL intensity of all the nanosystems is enhanced by increasing the energy of the X-ray photons. Moreover, Fig. 2 displays that the RL intensity of the porphyrin is weaker in the TCPP alone than in the functionalized NS at any X-ray beam energy, due to the weak probability of interaction with ionizing radiation in the keV energies range related to its low density (TCPP ρ = 1.3 g cm−3).56 On the contrary, the TCPP red luminescence is sensitized during the hybrid NS, especially at 6.6 keV and 10 keV. This can be attributed to the presence of a scintillating core with a density higher than the one of the TCPP itself. Indeed, the ZnO NPs are the heaviest elements of the hybrid nanosystems (ZZn = 30, ZO = 8, ZZnO = 27.8,57ρZnO = 5.61 g cm−3) thus, they can more efficiently interact with soft X-rays, mainly through the photoelectric effect. After the first interaction in ZnO NPs, the X-ray energy is deposited in the heavy components and the surrounding medium by the produced secondary ionized charges. On the TCPP-functionalized SiO2/ZnO surfaces, the organic molecules are in proximity to the dense NPs, which promote the energy deposition strictly close to the dye. This means that, at the higher energies of the X-ray beam, the increment of the RL red luminescence of the porphyrins is expected to be beneficially driven by the energy deposition augmentation due to ZnO. Moreover, whenever the primary interaction of the X-ray beam occurs in SiO2, this latter might have a partial role in the energy deposition mechanism thanks to its medium density (vide infra) (ZSi = 14, ZO = 8, ρSiO2 = 2.65 g cm−3).
Understanding the role of the energy deposition as a function of the energy of the incoming X-rays and the density and dimension of each element composing the sample is tricky. In this work, a complementary computational model was developed to find a rationale for the experimental RL results evidencing diverse efficacies in sensitization of the TCPP according to the energy of the incident beam and to shed light on the energy deposition profile features in hybrid nanosystems under ionizing radiation.
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Fig. 3 (a) Visualization of the geometry simulated in code A: small spheres of ZnO NPs (red, 5 nm diameter) are randomly distributed on the surface of a SiO2 sphere (white, 80 nm diameter) placed in air (teal green). We alternatively simulated 0, 10, 100, and 215 ZnO NPs. The radii of the SiO2 and ZnO NPs are depicted (black and pale orange arrows, respectively). (b) Percentage of energy deposited (Edep (%)) in ZnO, SiO2, and air as a function of the X-ray energy; calculated using code A and reported in Table 1. (c–e) Energy deposited in the SiO2/ZnO system plotted as a function of rSiO2 when X-rays of various energy interact first with SiO2. In these simulations, 215 ZnO NPs were randomly placed on the surface of the SiO2 NP. (f–h) Energy deposited in the SiO2/ZnO system plotted as a function of rZnO when X-rays of various energy interact first with one of the ZnO NPs. In these simulations, 215 ZnO NPs were randomly placed on the surface of the SiO2 NP. In the inset, a magnification of the Edep as a function of rZnO within the diameter of the ZnO NP (5 nm) is proposed. |
The Edep profile vs. rSiO2 rises as the volume of the respective spherical shell increases and then it suddenly drops at 40 nm, irrespective of the energy of the beam, when the edge of the SiO2 NP is reached. The residual amount of Edep, between 40 nm and 45 nm, can be ascribed to the interaction of the secondary electrons with ZnO NPs. Thus, when the primary interaction occurs in silica, only a small fraction of the energy is deposited outside the silica sphere. However, the fraction of the total Edep in SiO2, regardless of where the primary interaction occurred, goes down while the beam energy rises, which is particularly obvious for 10 keV (Fig. 3b and Table 1).
Fig. 3f–h depict the profile of the deposited energy when the first X-ray interaction event occurs in one of the ZnO NPs. Here, the profile of deposited energy is expressed as a function of the distance, rZnO, from the center of the ZnO NP where the primary interaction occurred, and it, again, increases with rZnO until the radius of the NPs is reached, i.e. 2.5 nm. As the energy of the incoming photons increases, the fraction of the deposited energy within the same ZnO NP where the primary interaction occurred grows, with a maximum reached for a 10 keV beam. In parallel, the energy Edep deposited outside the ZnO particle after the interaction of the ionizing radiation with ZnO follows different paths, depending on the energy of the beam. Indeed, for X-ray energy of 3.3 keV and 6.6 keV, a fraction of the generated secondary electrons has enough kinetic energy to escape from the ZnO. The amount of kinetic energy of these carriers, and thus, energy released outside the NPs is expected to be larger for excitation with an X-ray beam at 6.6 keV with respect to the case beam at 3.3. keV. In fact, we can observe that the radial distribution of the deposited energy is spread over a broader distance range when 6.6 keV is considered. On the contrary, the Edep outside the ZnO goes to zero as the X-ray beam at 10 keV is mostly absorbed by ZnO, due to the resonance with the absorption edge of Kα transition of zinc that is peaked at about 9.7 keV.58 Thus, the secondary charges do not possess the sufficient energy to steam out the NPs as their residual kinetic energy is relatively low (Fig. 3b and Table 1). The importance of the presence of dense ZnO is further supported by the results of code A for simulations where 0, 10, 100, and 215 ZnO NPs cover the silica sphere surface. Indeed, despite the diminution of the number of X-rays interacting with the SiO2/ZnO at 10 keV (Fig. S6 and Table S5†), the role of ZnO in harvesting the incoming photons with high energy dominates already for 100 ZnO NPs (Fig. S7 and Table S6†).
To simulate the interaction of X-rays with a large number of NSs, the second code (code B) was developed, simulating a sample holder filled with ∼104 silica spheres covered by a ZnO layer, whose volume equals the volume of 215 ZnO NPs of code A (Fig. 4a). As explained in the Method section, the replacement of the 215 ZnO NPs with a spherical shell of the same total volume was necessary to accommodate the computational capabilities. Fig. 4b and Table 2 report how the deposited energy is distributed among the different media regardless of where the primary interaction occurred. The dependence on the energy of the incoming photons is analogous to the one observed for code A (Fig. 3b and Table 1) with the exception of the energy deposited in air. Because code B considers a large number of packed NSs, only a limited volume is occupied by air. Consequently, the fraction of energy being deposited in air is negligible. In Fig. 4c–h, for the three X-rays energies considered, the spatial profile of the deposited energy in the SiO2/ZnO is reported as a function of r, where r is the distance between the point where the energy is being deposited and the centre of the SiO2 sphere. The profile of Edep is calculated when the first interaction with the ionizing radiation occurs either in SiO2 (Fig. 4c–e) or in ZnO (Fig. 4f–h). In accordance with code A, the number of interacting photons over the 1 × 108 incoming ones decreases when the X-ray energy increases (Fig. S8 and Table S7†). When the primary interaction occurs within a silica sphere, for energy of 3.3 keV, part of the energy is deposited within the same sphere. However, a significant fraction of energy is deposited outside the sphere (r > 40 nm), either in the surrounding medium or in other nearby SiO2/ZnO NSs. The narrow peak in the distribution, in proximity of r = 40 nm is related to the energy being deposited within the ZnO shell surrounding the SiO2 sphere. When the primary interaction occurs in the ZnO spherical shell, a significant fraction of energy is deposited at r = 40 nm for all beam energies, indicating that most of the secondary electrons do not escape the ZnO shell. Interestingly, in agreement with code A, the amount of energy deposited outside ZnO changes with the energy of the X-rays. With respect to the case of 3.3 keV, when 6.6 keV radiation is considered, a higher fraction of energy is deposited outside the ZnO layer because the higher kinetic energy of the secondary electrons allows them to travel longer distances. In the case of 10 keV, however, the photoelectric interaction with Ka electrons becomes possible. This turns out in the emission of low kinetic energy electrons that hardly exit the ZnO layer.
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Fig. 4 (a) Approximation of the SiO2/ZnO geometry is displayed where each SiO2 NP (white) is covered with a layer of 0.7 nm of ZnO (red). The thickness of the ZnO layer is calculated to provide a volume equivalent to 215 zinc oxide NPs (5 nm diameter), similarly to code A. A number of 5 × 104 SiO2/ZnO (red spheres) are randomly placed in a cylinder (8.25 μm diameter, 1 μm height) filled with air (teal green). The geometry for code B simulates the experimental RL setup conditions. (b) Percentage of energy deposited (Edep (%)) in ZnO and SiO2, from the data reported in Table 2 simulated using code B. (c–h) Energy deposited in the nanosystems plotted as a function of r, the distance to the center of the NP where the energy is deposited. Edep is calculated for the three X-ray energies when the X-rays first interact with SiO2 (c–e) or ZnO (f–h). |
The results coming from codes A and B both point out the importance of the presence of dense ZnO around the medium-density silica sphere to favour the deposition of energy from the incoming X-ray beam with energies up to 10 keV. This is particularly evident at 10 keV as the presence of ZnO increases the probability of interaction with the incoming X-ray photons (Fig. S6 and S8†). The spatial energy deposition profiles reveal that, for the X-ray energy range considered, a relevant amount of the energy deposition occurs in the volume where the primary interaction occurs: due to their higher density with respect to the environment, both SiO2 and ZnO can be involved in stopping the ionizing radiation for each energy. However, for 3.3 keV energy, silica plays a dominant role in the interaction of the ionizing radiation; in turn, the presence of ZnO has a particularly positive effect on incoming X-rays of 10 keV. Moreover, at any energy, a limited amount of energy is deposited in the surrounding medium (air) outside the considered NS. In general, the probability of the interaction between matter and ionizing electromagnetic radiation, which is driven by the photoelectric effect, Compton scattering, and pairs production and expressed by the physical parameter of mass attenuation coefficient, is ruled by the density and Zeff of the irradiated matter and the energy of the incoming ionizing radiation.59,60 At the energy of the incident X-ray beam of 3.3 keV, the photoelectric effect is the predominant type of interaction. Despite SiO2 featuring a lower density Zeff, with respect to ZnO, the deposition of energy in silica is favoured due to the bigger volume of SiO2 (26800 nm3) compared to the one occupied by 215 NPs of ZnO (14
060 nm3). When the X-ray energy increases, the higher Zeff value of ZnO becomes more important in enhancing the interaction with the incoming radiation. This is particularly true for 10 keV X-ray photons because of the X-ray absorption edge for the Kα transition of zinc.58 Consequently, 10 keV X-rays are absorbed by ZnO NPs, leading to the ionization of zinc core shells and to the generation of low-energy photo and Auger electrons that can further deposit their energy inside the ZnO NPs. However, the energy deposited is negligible outside ZnO for 10 keV photons (Fig. 3h and 4h) since, above the K-edge, the created charges have low energy impeding them from escaping from the ZnO itself. Upon exposure to 6.6 keV X-rays, the interaction and energy deposition mechanisms of either SiO2 or ZnO are not as efficient. This can be explained considering that, at this photonic energy, the energy deposition due to the presence of SiO2 starts to diminish, while the absorption of the energy by ZnO remains weak since the X-ray energy is below the zinc absorption K-edge.
Once the results from the numerical simulations are assessed, the TCPP emission sensitization would be expected to follow the same energy-dependent behaviour foreseen by code B. To try to evidence the Zn contribution to the X-ray interaction, we performed RL measurements as a function of the accelerating voltage on two samples (Fig. S9†). One consists of ZnO/SiO2 @APTES@Porp 1%, the second one is identical but without ZnO NPs. Unfortunately, the comparison between the experimental data and the numerical simulations appears to be not straightforward. The most problematic point in this comparison is related to the fact that our X-ray source is not monochromatic as is the case for the Monte Carlo modelling. In fact, given the acceleration voltage (up to 32 kV) and the tungsten target, most of the emitted X-rays are being generated by bremsstrahlung resulting in a continuous energy distribution over imposed on a few monochromatic tungsten lines. Only the average of such a distribution approximates the one used for the numerical simulations. This results in a smoothing of all the phenomena predicted by the simulations, especially those occurring in ZnO. On one side, when moving from an average energy of 3.3 keV to 6.6 keV the reduction in the overall RL intensity, which would be expected from the decreased interaction probability with the ionizing radiation predicted by the code B (Fig. S11c†) is absent (ESI Fig. S11b†). However, it is worth noticing that, due to computational constraints, the modelled sample dimensions were downscaled by three orders of magnitude with respect to the real ones, resulting in a thickness of 1 μm rather than 1 mm. As a consequence, the simulation fails to account for the interactions occurring in most of the sample thickness progressively underestimating the total deposited energy while the acceleration voltage increases. On the other hand, due to the continuous distribution of X-ray energy in the RL experiment, the energy threshold due to the Zn Kα absorption line is not clearly detectable. In fact, at an acceleration voltage of 20 kV (corresponding to a mean energy of 6.6 keV) a significant fraction of photons has an energy exceeding 10 keV. Nevertheless, the normalized RL spectra on SiO2 @APTES@Porp 1% and ZnO/SiO2 @APTES@Porp 1%, shown in Fig. S10,† evidence the intensity dependence as a function of the tube voltage and a better performance of the ZnO containing sample, particularly for the highest X-rays energies. This result can be seen in agreement with Fig. S11b† where the maximum TCPP red luminescence sensitization occurs for the highest deposited energy amount for X-rays at an energy of 10 keV.
This discovery can help to guide the design of future hybrid NS to be used in clinics, where a specific augmentation of energy deposition mechanism – in the presence of X-ray beams with energy reaching hundreds of keV – is foreseen and boosted.
Footnote |
† Electronic supplementary information (ESI) available: TGA analysis on the SIO2/ZnO systems, RL Gaussian deconvolution results, Montecarlo simulation results of codes A and B by GEANT4 toolkit (version 4.10.6 patch 01). See DOI: https://doi.org/10.1039/d4na00640b |
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