Open Access Article
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Metal Oxide Doped Organic Thin Film Transistors: A Comprehensive Review
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Nikhil Pais , Manav Jeetendra Shirodkar and Poornima Bhagavath
First published on 30th August 2025
Abstract
In recent years organic thin film transistors (OTFT) have been gaining widespread interest for electronic displays, circuits and sensors over the traditional silicon-based transistors due to its unique properties such as low cost, mechanical and electrical stability, low temperature processibility and large area processibility. They are widely used in applications pertaining to flexible displays, wearable devices, radio frequency identification tags (RFID), e-skin, biosensors, and flexible integrated circuits. However, organic thin film transistors are trailing behind silicon-based technology with inferior mobilities and high operational voltages. These challenges can be mitigated by using metal oxides which owing to their high work function and stability can enhance the OTFT device parameters. This review aims to provide insights into the usage of metal oxides in organic thin film transistors and highlights its contribution in its role as hole injection layers (HILs), charge transport complexes (CTCs), bilayer source-drain (S-D) electrodes and gate dielectrics.