Wenhui
Meng
,
Haojie
Sui
,
Zan
Li
,
Xinjing
Chen
,
Yongjia
Li
,
Shufang
Zhang
*,
Hai
Zhong
,
Qi
Zhang
and
Changlin
Yao
*
School of Physics and Photoelectronic Engineering, Ludong University, Yantai, 264025, China. E-mail: zhang.shufang@ldu.edu.cn; cyao1992@ldu.edu.cn
First published on 30th October 2025
Carbon-electrode, hole-transport-layer-free perovskite solar cells (C-PSCs) offer compelling commercialization potential but suffer from uncontrolled crystallization, leading to defective films and severe non-radiative losses. Current interfacial modifications passively form adducts, failing to kinetically regulate crystallization. This work pioneers a dynamic, self-regulating interface strategy using nickel acetate (NA). NA enables in situ generation of a Pb2+ complex reservoir via reversible ion exchange (PbI2 + Ni(CH3COO)2 ⇌ Pb(CH3COO)2 + NiI2). The controlled Pb2+ release from the complex reservoir uniquely achieves dual functionality: it kinetically suppresses nucleation for large-grained films while simultaneously passivating interfacial defects. This synergistic action, coupled with optimized energy-level alignment, yields significantly enhanced charge extraction. Consequently, NA-modified C-PSCs achieve a record power conversion efficiency (PCE) of 18.43% (vs. 14.11% for the control) with exceptional operational stability. Crucially, the synergistic action of chemical bonding in the insoluble Pb–Ni complex and the physical barrier formed by the NiOx layer during annealing drastically reduces lead leakage, establishing a dual-function paradigm for highly efficient, stable, and eco-compatible perovskite photovoltaics.
Recent advances in perovskite photovoltaics have witnessed extensive exploration of interfacial modifiers, including organic small molecules, polymeric materials, and inorganic salts.20–23 For instance, Tan et al. introduced potassium sucrose octasulfate (K8SOS) through multipoint enhanced chemical bonding to bridge the SnO2/perovskite buried interface, passivate defects in the perovskite and SnO2, suppress non-radiative recombination and ion migration, improve the crystallinity of perovskite layers, and achieve a high efficiency of 25.32%.24 Cao et al. used phenylhydrazinium chloride (PC) as a passivator to reduce defect density and delay the crystallization process of perovskite films. The PCE of small area devices can reach 25.80%.25 Zhang et al. used a guanidine salt passivator (Agu) to improve the SnO2/perovskite interface and utilized the enhanced hydrophobicity of the heterojunction interface of hydrogen bond sites to increase the perovskite grain size, achieving a reduction in trap density and non-radiative recombination, and the PSCs achieved a 24.4% PCE.26 While current interfacial modifications rely passively on adduct formation between modifiers and perovskite precursors, yielding limited crystallization improvement, they fail to achieve kinetic control over nucleation and growth.27,28 This fundamental limitation perpetuates heterogeneous crystallization and defect proliferation.
Herein, we pioneer a dynamic, self-regulating interface strategy employing nickel acetate (NA) to in situ generate a Pb2+ complex reservoir via reversible ion exchange (PbI2 + Ni(CH3COO)2 ⇌ Pb(CH3COO)2 + Ni2). The controlled Pb2+ release from Pb(CH3COO)2 kinetically suppresses nucleation while simultaneously passivating interfacial defects, enabling large-grained, low-trap-density perovskite films. Concurrently, optimized energy-level alignment enhances charge extraction. Consequently, NA-modified carbon-electrode, HTL-free PSCs achieve a record PCE of 18.43% (JSC = 22.71 mA cm−2, VOC = 1.11 V, FF = 73.1%), surpassing control devices (14.11% PCE) with exceptional stability. The synergistic effect between the chemically bonded insoluble Pb–Ni complex and the NiOx physical barrier is crucial, as it significantly suppresses lead leakage and introduces a dual-functional strategy for developing efficient, stable, and environmentally compatible perovskite photovoltaics.
O stretching vibration of NA red-shifted from 1583 cm−1 to 1571 cm−1 upon binding with PbI2 (Fig. S4), confirming the formation of a bimetallic complex. During thermal annealing, the complex gradually releases Pb2+ ions, reducing supersaturation and enabling complete reaction with AX (FAI or MAI/CsI), thereby decelerating perovskite crystallization.32 To elucidate the mechanism, we performed density functional theory (DFT) calculations to analyze the molecular electrostatic potential (ESP) of NA.30,33 As shown in Fig. 1b, Ni2+ exhibits a positive ESP, while the carbonyl group displays a pronounced negative potential, indicating strong charge delocalization, a prerequisite for ion exchange.
To validate the reaction pathway, we computed the binding energies between acetate ions and Pb2+/Ni2+ using reduced density gradient (RDG) analysis. Fig. 1c and d reveal distinct blue regions (strong attraction) between Pb2+ and acetate, contrasting with weaker interactions for Ni2+. Critically, the binding energy for Pb2+-acetate (Fig. 1e and f) is −2.38 eV, which is lower than that of Ni2+-acetate (−0.34 eV), confirming the preferential formation of Pb(CH3COO)2. This facilitates the formation of a uniform, dense Pb(CH3COO)2 layer on the ETL surface, ultimately regulating perovskite growth. The optimized crystallization process is schematically illustrated in Fig. 1g.
Surface morphology analysis via SEM (Fig. 2a and b) reveals uniformly distributed SnO2 grains on both pristine and NA-modified substrates, confirming that NA treatment induces no adverse effects on the ETL microstructure. Optical characterization (Fig. 2c and Fig. S5, S6) further demonstrates negligible differences in transmittance and absorbance spectra, indicating that the NA interlayer does not compromise light harvesting in the perovskite layer. Critically, electrical conductivity measurements (Fig. 2d) show that NA modification enhances SnO2 conductivity from 0.18 to 0.23 S m−1. We attribute this improvement to acetate-induced passivation of surface oxygen vacancies, which reduces trap-assisted recombination and facilitates charge extraction.34
Atomic force microscopy (AFM) quantifies the interfacial contact quality: the root-mean-square (RMS) roughness decreases from 9.50 nm (pristine SnO2) to 8.44 nm (NA-modified), as shown in Fig. 2e and f. This smoother surface enhances ETL/perovskite interfacial adhesion, promoting carrier transfer while enabling uniform spreading of PbI2 precursor solutions, a prerequisite for complete conversion to dense PbAc2 films during ion exchange.35 Contact angle measurements (Fig. 2g and h) provide mechanistic insights into crystallization control: NA modification increases the contact angle of perovskite precursors from 24.2° to 36.1°. Applying the Young–Dupré equation and classical nucleation theory, we calculate a higher nucleation energy barrier (γ = 1.49 × 10−18 mJ m−2) on NA-treated surfaces versus the control (γ = 4.15 × 10−19 mJ m−2). This suppressed nucleation kinetics favors the growth of large-grained perovskite films.36 The nickel salt forms a NiOx layer during annealing, which acts as a physical barrier that inhibits the release of Pb2+ ions, thereby further delaying the crystallization process of perovskite films. In addition, as illustrated in Fig. S7 and S8, the introduction of nickel acetate (NA) into the perovskite precursor solution results in a larger colloidal particle size (increasing from 131.1 nm to 159.5 nm) and a higher zeta potential (rising from 3.82 mV to 7.13 mV). This change can be attributed to the strong coordination between acetate and the precursor, which promotes the formation of larger colloids. These optimized colloidal characteristics contribute to the growth of perovskite films with larger grain sizes and improved morphology. In situ UV-vis tracking of perovskite films during thermal annealing (Fig. 3a and b) reveals that NA-modified samples exhibit slower absorption evolution kinetics in the initial phase compared to the control. This delayed optical response confirms retarded crystallization kinetics, attributed to the gradual release of Pb2+ ions from the interfacial layer. Such controlled growth enables the formation of highly compact, large-grained perovskite films with suppressed defect formation.37
Surface morphology analysis (Fig. 3c and d) reveals that perovskite films deposited on NA-modified SnO2 ETLs exhibit enlarged grain sizes (from 418.9 nm to 718.4 nm, as shown in Fig. S9) and suppressed pinhole formation, confirming effective crystallization regulation through controlled Pb2+ release. This aligns with XRD patterns (Fig. 3e), where NA-treated films demonstrate enhanced perovskite phase peak intensities (14.1°, 28.4°) and near-complete suppression of PbI2 signals (12.4°), verifying minimized residual PbI2 formation via delayed reaction kinetics. It is noticeable that the FWHM value of the (110) peak after NA modification was 0.072°, which was lower than the control film (0.082°) (Fig. S10), which is consistent with the SEM results, further proving that NA treatment improves the quality of perovskite films.28 Optoelectronic characterization further corroborates improved film quality: (i) UV-vis spectra (Fig. 3f) show absorption enhancement in the 500–800 nm range, directly contributing to potential JSC gains; (ii) Tauc plots (Fig. 3g) indicate negligible bandgap alterations, excluding electronic structure modifications; (iii) AFM quantification (Fig. 3h and i) documents reduced RMS roughness from 22.3 nm (pristine) to 14.7 nm (NA-treated), mitigating interfacial recombination through improved interfacial contact.
To evaluate the impact of NA treatment on photovoltaic performance, carbon-based HTL-free PSCs with an FTO/SnO2/perovskite/carbon architecture (Fig. 4a) were fabricated. Current density–voltage (J–V) measurements under AM 1.5G illumination (100 mW cm−2) reveal that devices modified with 0.25 mg mL−1 NA achieve a champion PCE of 18.43% (JSC = 22.71 mA cm−2, VOC = 1.11 V, FF = 73.1%), representing a record efficiency for carbon-electrode PSCs and substantially exceeding the control device's PCE of 14.11% (Fig. 4b), and the photovoltaic parameters are shown in (Fig. 4b and Table S1). This enhancement primarily arises from NA-induced film quality improvement and interfacial contact optimization. Steady-state power output at the maximum power point (Fig. 4c) confirms negligible degradation over 500 s of operation. Further validation comes from the increased integrated JSC (Fig. 4d), rising from 20.13 to 22.39 mA cm−2, demonstrating excellent agreement with J–V values and affirming device reliability. In addition, the box plots of PCE for 20 original devices and C-PSCs modified with NA were analyzed under the same conditions, and the corresponding standard deviations were calculated (Fig. S11). Compared with the original device, the PCE of the NA-modified device is more concentrated and the average value is higher, further proving that NA-modified C-PSCs have better performance reproducibility and reliability.
Ultraviolet photoelectron spectroscopy (UPS) analysis (Fig. 4e and f) reveals a positive shift in both valence band (VB) and conduction band (CB) energies for NA-modified perovskite films, using the formula: EV = EF − Eonset, EF = Ecutoff − 21.22 eV and EC = EV + Eg, where EF, Eonset and Ecutoff are the Fermi level, onset binding energy and secondary electron cutoff energy, calculated as −5.63 eV (VB) and −4.07 eV (CB) versus −5.80 eV (VB) and −4.24 eV (CB) for the control. This alignment optimization, illustrated in the energy-level diagram (Fig. 4g) from each phase, reduces the hole extraction barrier at the perovskite/carbon electrode interface to 0.63 eV, directly contributing to enhanced VOC.38 Photoluminescence studies (Fig. 4h) demonstrate obvious PL quenching in NA-modified devices (FTO/SnO2/NA/perovskite), attributed to suppressed interfacial recombination through defect passivation, thereby facilitating the transfer of carriers. Time-resolved PL (Fig. 4i and Table S2) corroborates accelerated charge extraction, with the average carrier lifetime (τavg) decreasing from 25.18 ns (pristine) to 17.75 ns (NA-treated), consistent with improved interfacial contact quality.39
Electrochemical characterization reveals significantly improved charge transport kinetics in NA-modified devices. Dark current–voltage measurements (Fig. 5a) demonstrate reduced leakage current in NA-treated devices, indicating suppressed non-radiative recombination through enhanced film quality and ETL/perovskite interface passivation.40 Voltage-light intensity dependence analysis (Fig. 5b) yields an ideality factor of n = 1.36 kT/q for NA-modified devices versus 1.75 kT/q for controls, confirming reduced trap-assisted recombination that directly enhances VOC and FF.41 Space-charge-limited-current (SCLC) measurements of electron-only devices (FTO/SnO2/(with/without)NA/perovskite/PCBM/carbon, Fig. 5c and d) quantify defect density reduction using: Ntrap = 2εrε0VTFL/eL2, where εr is the relative permittivity, ε0 is the vacuum permittivity, L is the film thickness, and VTFL is the trap-fill limit voltage. NA modification reduces Ntrap from 1.79 × 1015 cm−3 (VTFL = 0.22 V) to 1.03 × 1015 cm−3 (VTFL = 0.16 V), validating defect suppression that synergistically minimizes non-radiative losses.42 Furthermore, PL measurements were performed on Glass/PVK samples (Fig. S12). The NA-treated perovskite films exhibited a significant enhancement in PL intensity along with a blue shift of the emission peak, indicating effective defect passivation and suppressed non-radiative recombination.40 Electrochemical impedance spectroscopy (EIS, Fig. 5e and Table S3) reveals that NA-modified devices exhibit reduced transfer resistance (Rtr = 7398.4 Ω) and enhanced recombination resistance (Rrec = 8.44 × 106 Ω) compared to control values (Rtr = 8199.5 Ω, Rrec = 7.35 × 106 Ω). This dual improvement signifies suppressed non-radiative recombination and accelerated charge transport, directly contributing to enhanced JSC and VOC.43 Mott–Schottky analysis (Fig. 5f) further demonstrates a strengthened built-in potential (Vbi) of 1.02 V for NA-treated devices versus 1.06 V for controls, with steeper curve slopes confirming mitigated interfacial charge accumulation and improved charge separation efficiency.
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| Fig. 5 (a) Dark state J–V curves of different PSCs. (b) VOC–I curves and their fitting curves. (c and d) J–V curves measured by the SCLC method. (e) Nyquist curves. (f) Mott–Schottky (MS) curves. | ||
Device stability and environmental safety are critical for perovskite solar cell commercialization. NA modification increases the water contact angle from 55.7° to 77.1° (Fig. 6a), demonstrating enhanced moisture resistance through enlarged grain hydrophobicity. Unencapsulated devices aged at 25 °C/40% RH in the dark retain 90% of the initial PCE after 1000 hours (Fig. 6b), significantly outperforming controls (62% retention). Under continuous one-sun illumination under an N2 atmosphere and open circuit (Fig. 6c) conditions, NA-optimized PSCs maintain 82% PCE after 720 hours versus rapid control degradation (52% retention). This stability enhancement originates from NA-induced defect passivation and improved film compactness.
Furthermore, systematic lead sequestration analysis confirms NA's efficacy in suppressing Pb2+ leakage and immobilizing Pb2+. Colorimetric tests in saturated lead solutions demonstrate that NA-induced reduction of Pb2+ (Fig. 6d) is attributed to the chemical binding of the insoluble Pb–Ni complex and the physical barrier effect of the NiOx layer. To evaluate real-world environmental risks, hail-damaged devices were encapsulated with EVA/glass on the silver electrode side (Fig. 6e), tilted at 30°, and subjected to deionized water flow (5 mL h−1 for 1 h; Fig. S13).44,45 ICP-OES quantification reveals NA-modified devices reduce Pb2+ leakage from 49 ppb to 252 ppb (Fig. 6f), outperforming conventional encapsulation strategies.
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