Open Access Article
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Structure-Property Relationships of Group IV (Si-Ge-Sn) Semiconductor Nanocrystals and Nanosheets – Current Understanding and Status
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Jeremy B Essner , Maharram Jabrayilov , Andrew Tan , Abhishek Shahsikant Chaudhari , Abhijit Bera , Brodrick Sevart and Matthew G. Panthani
First published on 9th May 2025
Abstract
Group IV semiconductor nanomaterials, including silicon nanocrystals and more recently nanosheets, are emerging as promising candidates for next-generation optoelectronic devices due to their room-temperature photoluminescence and compatibility with CMOS technologies. However, their intrinsic indirect bandgaps remain a key limitation. In this Feature Article, we highlight our group’s contributions toward structure-property relationships, specifically, in understanding of how the semiconductors' structure, surface chemistry, and chemical composition influence this key limitation, namely photoluminescence, in solution-processable Group IV nanocrystals and nanosheets, with an emphasis on silicon-based materials.