Issue 23, 2024

Impact of electrode recrystallization on the stability of organic transistors

Abstract

Organic field-effect transistors (OFETs) have attracted wide attention due to their low cost, light weight, and mechanical flexibility. However, stability limits the practical application of OFETs. Although many strategies have been developed to stabilize organic semiconductor (OSC) films to improve the stability of OFETs, the impact of the electrode on the stability of OFETs has been ignored. Here, we demonstrate in detail the influence of recrystallization of polycrystalline metal electrodes on the stability of OFETs. Furthermore, the mechanically and thermally stable nano-graphene (NG) electrodes are prepared by the plasma-enhanced chemical vapor deposition (PECVD) method. The NG electrodes show good compatibility with OSCs, and the average mobility of bottom-gate bottom-contact dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) OFETs reaches 1.31 cm2 V−1 s−1. Moreover, the stable NG electrodes greatly improve the thermal stability of DNTT OFETs. This work proves that the stability of the electrodes plays a vital role in the stability of OFETs and provides a new idea for stabilizing OFETs.

Graphical abstract: Impact of electrode recrystallization on the stability of organic transistors

Supplementary files

Article information

Article type
Paper
Submitted
03 Apr 2024
Accepted
14 May 2024
First published
16 May 2024

J. Mater. Chem. C, 2024,12, 8351-8356

Impact of electrode recrystallization on the stability of organic transistors

S. Sun, H. Guan, J. He, J. Qi, X. Chen, L. Li and W. Hu, J. Mater. Chem. C, 2024, 12, 8351 DOI: 10.1039/D4TC01364F

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