Chang
Li
ab,
Rishabh D.
Guha
c,
Abhinandan
Shyamsunder
ab,
Kristin A.
Persson
*bde and
Linda F.
Nazar
*ab
aDepartment of Chemistry and the Waterloo Institute for Nanotechnology, University of Waterloo, Ontario N2L 3G1, Canada. E-mail: lfnazar@uwaterloo.ca
bJoint Center for Energy Storage Research, Argonne National Laboratory, Lemont, Illinois 60439, USA
cMaterials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
dMolecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA. E-mail: kristinpersson@berkeley.edu
eDepartment of Materials Science and Engineering, UC Berkeley, Berkeley, California 94720, USA
First published on 16th November 2023
High-voltage rechargeable magnesium batteries (RMBs) are potential alternatives to lithium-ion batteries owing to the low cost and high abundance of magnesium. However, the parasitic reactions of the latter with many electrolytes greatly hinders the stability and kinetics of Mg plating/stripping. Here we report a new and easily accessible solvent-designed electrolyte, which effectively solves the difficulty of ion pair dissociation and facilitates fast nanoscale Mg nucleation/growth using simple Mg(TFSI)2 as the salt, enabling a facile interfacial charge transfer process. Dendrite-free Mg plating/stripping is maintained for over 7000 hours (∼10 months) at a practical areal capacity of 2 mA h cm−2. The high-voltage stability of these electrolytes is demonstrated by benchmarking with polyaniline||Mg full cells with an operating voltage up to 3.5 V that exhibit stable cycling at a 2C rate with 99% coulombic efficiency after 400 cycles. This work opens up new frontiers in coupling low-cost electrolytes with next-generation high-voltage cathode materials for fast-charging RMBs with long life and high energy densities.
Broader contextNet-zero carbon dioxide emission demands clean renewable energy, while harnessing it requires electrochemical storage devices with high energy density, safety and affordability. Rechargeable magnesium batteries (RMBs) are candidates because of the abundance of Mg (over 1000 times that of Li), the high theoretical volumetric energy density of Mg metal, and magnesium's low reduction potential. However, to date, there is no practical RMB on the market owing to many unsolved major challenges. The key factors can be partly addressed by designing better electrolytes. Here, we report a new concept for an electrolyte system that disrupts strong ion-pairing in solution, enabling highly reversible, high-voltage Mg metal batteries. This electrolyte relies on two key components: ethyl phosphate as a high dielectric solvent to unlock the activity of Mg2+/Mg redox, and co-ether solvents to improve the kinetics and stability of Mg plating/stripping. The complex interactions between cation, anion and solvent are revealed by advanced spectroscopies and MD simulations, providing new design principles. The use of cost-effective and commercially available Mg salts simplifies scalability. The 4 V stability of this electrolyte is demonstrated by benchmarking Mg metal batteries assembled with an organic polymer cathode that run at a 2C rate for over 400 cycles with 99% coulombic efficiency up to 3.5 V. Our design opens up new frontiers for low-cost and high-voltage electrolyte approaches that take advantage of facile desolvation processes at the interfaces, and can establish a platform for new avenues of investigation for next generation energy storage in RMBs. |
Among many unaddressed challenges for practical RMBs, designing better electrolytes is one key to their successful commercialization.1,4,5,11 The charge-dense Mg2+ cation results in: (1) a high desolvation penalty due to the slow kinetics of ion pair dissociation; and (2) very slow ion migration kinetics because of a thick solid electrolyte interface (SEI) on the Mg surface which impedes the interfacial charge transfer process.1,12 Therefore, transferring electrolyte design principles from LIBs directly to RMBs is not possible. Utilizing conventional carbonate-based solvents and fluorinated anions such as BF4− and PF6− results in tightly bonded contact ion pairs (CIPs) that aggravate passivation of the Mg anode via pronounced electrolyte decomposition.12 Classical Mg electrolytes rely on concentrated chloride species to unlock reversible Mg plating/stripping;13 however, the latter are oxidatively unstable (∼2.5 V vs. Mg2+/Mg) and highly corrosive to current collectors or battery casings.1 Their dominant intercalation species – MgxCly+ – also lowers the energy density compared to Mg2+ storage.11,14
To tackle these challenges, halide-free Mg salts with bulky alkoxyborate/aluminate or carborane anions were developed that show high reversibility for Mg plating/stripping with over 99% coulombic efficiency (CE) and oxidative stability over 3.5 V vs. Mg2+/Mg.15–19 Among these, Mg(CB11H12)2 in a 1,2-dimethoxyethane (DME)/diglyme (G2) solvent blend exhibits very fast Mg plating/stripping, and can support 5C-rate cycling with pyrene-4,5,9,10-tetraone (PTO) as the enolization cathode.20 The discovery of such bulky anion-salts dates back three decades.12,21 Unfortunately, most are expensive due to the reagents needed for their complex synthesis and purification procedures, where trace impurities can cause short lifetimes for Mg plating/stripping.11,16,22–24 A more economical option relies on modifying Mg electrolytes and using commercial halide-free salts such as magnesium bis(trifluoromethanesulfonimide) (Mg(TFSI)2 with high oxidative stability (approaching 4 V vs. Mg2+/Mg) and good ionic conductivity (1–6 mS cm−1).25–27 However, unlike bulky alkoxyborates/aluminates and carborane anions that prefer to exist as solvent-separated ion pairs (SSIPs) in ether-type solvents, the more electron localized TFSI− anion contributes to large fractions of CIPs that are easily reduced during Mg plating (Scheme 1(a)).28–31 The resulting inorganic products (for example, MgF2 and MgS), together with other solvent-derived polymeric/organic species,32 lead to a thick impedance layer on the Mg surface that passivates Mg2+/Mg charge transfer. Currently, only a few studies have shown reversible Mg plating/stripping in such electrolytes. Impressively, additives with high donor numbers – methoxyethylamines – that tightly coordinate with Mg2+ can suppress DME decomposition and enable efficient Mg plating/stripping with over 99.5% CE over 100 cycles.33 Similarly, trimethyl phosphate was utilized to suppress DME decomposition.34,35 However, TFSI− anion decomposition occurs in the latter, leading to a lifetime of ∼450 hours in symmetric cells at a current density of 0.1 mA cm−2.34,35 Nonetheless, the phosphate approach inspired us to design solvents to boost Mg anode stability.
Here, we invent a new co-ether phosphate electrolyte (CEPE) system that enables fast and highly stable Mg2+/Mg redox activity at the anode and facile anion storage chemistry at the cathode using commercial Mg(TFSI)2 as the salt. A family of methyl phosphates ((CH3)3(CH2)nPO4, n = 0–4) with high dielectric constants and donor numbers were selected as electrolyte additives to interrupt [Mg2+–TFSI−] CIPs (Scheme 1(b)). This results in suppressed TFSI− reduction, which limits the thickness of the passivation layer and greatly lowers the voltage hysteresis for Mg plating/stripping. To further improve the Mg anode reversibility and stability, different ethers were chosen as co-solvents to tune the Mg2+ solvation sheath, thus facilitating desolvation and nanoscale Mg nucleation/growth (Scheme 1(c)). By combining advanced spectroscopy techniques, molecular dynamics (MD) simulations, and density-functional-theory (DFT) calculations, the Mg2+ solvation structure and its interaction with anions or solvents are disclosed in depth. The optimized CEPE electrolytes sustain highly reversible Mg plating/stripping behavior at a range of current densities. We demonstrate ultra-stable Mg plating/stripping for over 7000 hours (9.7 months) at a practical current density of 2 mA cm−2 and an areal capacity of 2 mA h cm−2. Importantly, the > 4 V anodic stability of these electrolytes enables polyaniline||Mg full cells to perform up to 3.5 V for over 400 cycles at a fast 2C rate with excellent capacity retention.
:
triethyl phosphate (TEP) [10
:
1 in vol, denoted as Mg(TFSI)2/DME:TEP]; and (3) tailor-designed Mg(TFSI)2/CEPE [0.4 M Mg(TFSI)2/DME
:
diethylene glycol dimethyl ether (G2)
:
bis(2,2,2-trifluoroethyl) ether (BTFE)
:
TEP, 19
:
19
:
2
:
4 in vol]. The molar ratio of Mg2+
:
TEP in the latter two electrolytes is ∼1
:
1. Instead of alkoxyborate/aluminate or carborane-based Mg salts, commercially available Mg(TFSI)2 was chosen as the salt, both on the basis of cost and owing to its strong ion pairing in ether-type electrolytes which we sought to disrupt with electrolyte design. TEP was chosen as a stronger donor (coordinating) solvent than glyme, while BTFE is a non-coordinating solvent. These choices of salt and solvents give us a good platform to understand the effect of cation/anion-solvent interaction on interfacial charge transfer in Mg plating/stripping. The optimal solvent ratios were determined through multiple experiment trials (Fig. S1, ESI†). Fig. 1(a) and (b) shows the voltage profiles of these electrolytes in Mg||Mg symmetric cells at a current density of 0.1 mA cm−2. In Mg(TFSI)2/CEPE, a very low Mg plating/stripping overpotential of ∼0.15 V was obtained – nearly two-fold lower than in Mg(TFSI)2/DME:TEP (∼0.3 V) – whereas in Mg(TFSI)2/DME more than a magnitude higher overpotential of ∼1.85 V was observed. The superiority of Mg(TFSI)2/CEPE was further confirmed by the fast-kinetics of Mg plating/stripping at different current densities (Fig. 1(c) and Fig. S2, ESI†), which reveals a low Mg plating/stripping overpotential of <0.5 V even at 10 mA cm−2. In contrast, the cell with Mg(TFSI)2/DME:TEP quickly shorted at 1 m A cm−2 (Fig. 1(c) and Fig. S1, ESI†) and Mg(TFSI)2/DME shows a continuously high overpotential up to ∼3.5 V (Fig. S3, ESI†).
While we observe improved Mg reversibility with TEP, the stability of the Mg anode during long-term cycling is of even greater importance.12,32,34,35 We investigated Mg||Mg symmetric cell behaviour in different electrolytes. At a practical current density of 2 mA cm−2 and areal capacity of 2 mA h cm−2 (Fig. 1(d)), cells with Mg(TFSI)2/DME and Mg(TFSI)2/DME:TEP undergo rapid short circuiting after only 2 and 12 hours, respectively. In contrast, cells employing Mg(TFSI)2/CEPE undergo robust stripping/plating for over 7000 hours (9.7 months) without significant increase in voltage hysteresis, and exhibit a total cumulative capacity of over 14 A h cm−2. The overpotential of Mg plating/stripping stabilizes at around 500 mV with no sudden voltage drops, ruling out the possibility of (soft) short circuits, as also confirmed by a charge transfer resistance of about 400 Ω attained after 7000 hours (Fig. S4, ESI†). To the best of our knowledge, this represents unprecedented stability and performance of Mg plating/stripping under such demanding conditions (Table S2, ESI†), suggesting good promise for long-life practical RMBs. The coulombic efficiency (CE) of Mg plating/stripping was investigated using Mg||Au asymmetric cells by a modified Aurbach method reported by Zhang et al.20,36 The highest CE of 95.2% was achieved in Mg(TFSI)2/CEPE (Fig. 1(e)), which is significantly greater that of Mg(TFSI)2/DME:TEP (70.9%). Therefore, the cumulative irreversible capacity over 7000 hours of plating/stripping (3500 cycles, Fig. 3(d)) in the CEPE electrolyte is only 2.4% of its total cumulative capacity. The baseline Mg(TFSI)2/DME electrolyte, in contrast, shows very limited Mg plating/stripping reversibility with only 6.1% CE due to pronounced electrolyte decomposition. While the increase in CE from DME/TEP to CEPE is remarkable, the latter's CE is not quite as high as achieved in bulky-anion salt alkoxyborate/aluminate16–18 or carborane-based electrolytes.15,20 This is probably due to the persistence of a low fraction of [Mg2+–TFSI−] contact-ion pairs (despite the major disruption of their formation, see discussion below), which are more easily reduced on the Mg surface.28
The charge transfer process at the Mg/electrolyte interface was further explored by electrochemical impedance spectroscopy (EIS) studies (Fig. 1(f)). In Mg(TFSI)2/CEPE, a very low charge transfer resistance (RCT) was observed in a Mg||Mg symmetric cell, consistent with its superior rate performance. On the other hand, Mg(TFSI)2/DME:TEP, despite exhibiting the highest ionic conductivity of 6.4 mS cm−1 among the three electrolytes (Fig. S5, ESI†), shows significantly higher RCT than Mg(TFSI)2/CEPE. This suggests interfacial electrochemistry plays a dominant role during Mg plating/stripping. Indeed, diffusion-limited tails ascribed to ion diffusion via as-formed interfacial Mg2+-conducting SEIs37 were observed in the low-frequency region in both electrolytes. In Mg(TFSI)2/DME, however, the very large charge transfer resistance is similar to that of many previous reports (Fig. S6, ESI†).15,27,34 This is due to electrolyte decomposition on the Mg surface that forms an interfacial (Mg2+-insulating) passivation layer, which leads to the absence of a diffusion-limited tail.
:
TEP ratio, which is directly correlated to Mg2+/Mg redox activity. Fig. 2(a) shows the Mg plating curves of the initial five cycles of Mg||Mg symmetric cells with different DME
:
TEP ratios. The Mg plating overpotential shows a TEP concentration-dependent behavior, identifying a DME
:
TEP ratio of 50
:
3 as an effective “sweet” spot to unlock fast Mg plating/stripping, and corresponding to a Mg2+
:
TEP molar ratio of 10
:
7. This is directly correlated to the CIP fraction in the electrolytes, as revealed by fitting Raman spectra of the TFSI− band in the 700–770 cm−1 region based on a well-established theory of SSIPs and CIPs (Fig. 2(b)).9,32,38 An abrupt decrease in CIP fraction from 40% to <30% is observed in DME
:
TEP (50
:
3), matching the sharp drop in plating overpotential to −0.32 V (Fig. 2(c)). It indicates a threshold in CIP fraction where facile Mg2+/Mg redox activity is unlocked below that limit, and Mg2+ desolvation from coordinated solvents at the interface starts to play a critical role (see below). Indeed, previous studies report that significant reduction of CIPs at the Mg surface suppresses TFSI− activity.28,29 This is verified by the remarkable decrease of F/S signals from decomposed TFSI− in the energy-dispersive X-ray spectra (EDX, Fig. 2(d)) of Mg(TFSI)2/DME:TEP, in contrast to the strong F/S signals in Mg(TFSI)2/DME (Fig. 2(e)).
To reveal the functionality of TEP in suppressing anion reduction activity, density-functional-theory (DFT) calculations were performed. In an implicit solvent, thermodynamically endergonic C–S bond dissociation was observed in the [Mg2+–TFSI−] CIPs (bond dissociation energy (BDE): 2.37 eV, Fig. 2(f)), whereas partially reduced transient [Mg+–TFSI−] CIPs show exergonic C–S bond dissociation (BDE: −1.25 eV), consistent with previous studies.28 The C–S bond dissociation accompanies complete reduction of Mg+ to Mg0 (Fig. S7, ESI†) and essentially enables an irreversible plating process. More exergonic C–S bond cleavage was obtained for [Mg+–TFSI−] CIPs surrounded by one explicit DME (BDE: −1.97 eV) or G2 molecule (BDE: −2.21 eV), emphasizing the co-solvation during charge transfer does not protect the TFSI− anions from reduction. The BDE is also exergonic (−1.51 eV) for a transient CIP surrounded by an explicit TEP molecule. In the molecular dynamics (MD) results (see Fig. 3(b) below), the paired Mg fraction decreases by ∼50% in the CEPE system when compared to the Mg(TFSI)2:DME system. These results, in conjunction with the Raman spectra (Fig. 2(b)), confirm that the introduction of TEP successfully outcompetes the TFSI− anions in the first solvation shell and significantly reduces the CIP concentration. Nonetheless, it is not reduced to zero. While the residual CIPs in CEPE could still induce limited anion decomposition, this may be further inhibited by applying interfacial protective coatings on the Mg surface,39 or by additional electrolyte design that is beyond the scope of this work.
Similar effects on activating reversible Mg2+/Mg redox in single DME solvents extends to other phosphates with a formula of (CH3)3(CH2)nPO4 (n = 0–4, Fig. S8, ESI†). The co-ether engineering approach functions similarly (for example, TMP with n = 0), albeit with poorer rate characteristics relative to TEP (Fig. S9 and S10, ESI†). Nonetheless, these phosphates with different numbers of methylene groups can behave very differently. Previous reports indicate TMP primarily displaces one DME from the Mg2+ solvation structure to suppress DME reduction by forming TMP-reduced SEIs,34,35 but significant TFSI− decomposition still occurs during Mg plating/stripping. The greater steric effect created by methylene groups in TEP may play a pivotal role in controlling interfacial activity of both the TFSI− anion and these phosphates. This directly relates to the electrochemical stability of the electrolytes (see the discussion below).40 More importantly, adding these phosphates to a single ether solvent (DME) delivers poor Mg anode stability even at a low current density of 0.1 mA cm−2 and areal capacity of 0.1 mA h cm−2 (Fig. S8, ESI†), which is inadequate for practically fast-charging Mg batteries. The optimized CEPE in this study represents a universal strategy to achieve benchmark-level Mg plating/stripping performance that applies to different phosphates (Fig. S10, ESI†). We further reveal the critical role of co-ethers in Mg(TFSI)2/CEPE to modify the Mg2+ solvation structure and plating/stripping morphology below.
The reduction in CIP formation by TEP is further upheld by classical MD simulations (Fig. 3(b)). Mg2+ shows strong interaction with the oxygen of the P
O motif of TEP (Fig. S13, ESI†). The average Mg2+–TEP coordination increases from ∼0.8 in Mg(TFSI)2/DME:TEP to ∼1.1 in Mg(TFSI)2/CEPE. The fractions of isolated and paired Mg2+ ions – defined by solvation shells with zero and one TFSI− anion – were also calculated. The paired Mg2+ fractions from MD closely matches with the experimental CIP concentrations (Fig. S9, ESI†), which is especially impressive with a non-polarizable forcefield:41 the average paired Mg2+ fraction decreases from ∼0.45 in Mg(TFSI)2/DME (experimental CIP concentration: ∼40%) to ∼0.26 in Mg(TFSI)2/CEPE (experimental CIP concentration: ∼23%). Fig. S14 (ESI†) shows the increasing diversity of the solvation shell population distributions in Mg(TFSI)2/CEPE compared to that in Mg(TFSI)2/DME, which suggests that a higher electrolyte entropy enables complete salt [Mg(TFSI)2] dissociation and allows Mg2+ ions to form fully solvated clusters.42 Moreover, the average coordination between Mg2+ and TFSI− steadily falls with a concomitant rise in isolated Mg2+ and free TFSI− species (Fig. S15, ESI†). This is a consequence of the simultaneous competition between DME, TEP and G2 (in Mg(TFSI)2/CEPE) to displace the TFSI− anion from the Mg2+ solvation environment in the phosphate-added systems (Fig. S16, ESI†). The G2 molecules – with three polar O atoms – can maximally participate in tridentate coordination with Mg2+ ions, while DME is only capable of monodentate or bidentate coordination. Consequently, the average coordination between Mg and DME is significantly lower in the CEPE system (Fig. S16, ESI†). A sharp Mg–O radial distribution function (RDF) peak at ∼2.1 Å and the displaced position of the Mg–N RDF peak at ∼4 Å (Fig. S11, ESI†) confirms that the O from the sulfonyl group dominates the interaction between Mg2+ and TFSI− in the first solvation shell.43 The negligible coordination between Mg and BTFE (Fig. S17, ESI†) is consistent with previous studies.30,44 These results provide strong support to the experimental results and confirm the decrease of CIPs in both the Mg(TFSI)2/DME:TEP and Mg(TFSI)2/CEPE electrolytes.
DFT calculations were further performed to calculate the binding energies of the predominant clusters in these electrolytes (Fig. S14, ESI†). The results in Fig. 3(c) demonstrate that the clusters with CIPs in the solvation shells (hatched bars) consistently exhibit a greater binding energy than fully solvent-coordinated Mg2+, in turn suggesting a higher desolvation energy for the charge transfer process.45,46 The direct correlation between binding and desolvation energy is already established.47 The trends in Fig. 3(c) indicate that the large decrease in CIPs and increase in exclusively solvent-coordinated Mg2+ solvated clusters promote a facile desolvation process during charge transfer.48 The results also affirm that the observed fast kinetics of Mg plating/stripping in the CEPE system is induced by higher exchange current densities and surface energies which in turn promotes uniform Mg electrodeposition (see below).45
The bulk dynamics of ethers and TEP in these electrolytes were explored by conducting variable temperature NMR. In both 31P and 1H spectra of Mg(TFSI)2/CEPE, no new peaks were found at low temperature (Fig. 3(d)). In Mg(TFSI)2/DME:TEP, however, the single 31P resonance at 298 K was gradually split into two at below 273 K (Fig. 3(e)), along with the appearance of more –CH3 and –CH2– signals of TEP in 1H spectra at low temperature (Fig. S18, ESI†). This peak splitting suggests Mg2+ is undercoordinated with TEP (e.g. fewer Mg2+–TEP bonds in the presumably six-coordinated Mg2+ solvation sheath). In addition, the Mg2+–DME interaction in Mg(TFSI)2/DME:TEP shows similar undercoordination with two new higher-frequency peaks appearing in 1H spectra below 273 K. These were assigned to the –CH2– and –CH3 groups of DME by carrying out a Heteronuclear Single Quantum Coherence (HSQC) experiment (Fig. S19, ESI†). The new peaks can be ascribed to the slow exchange rate of DME molecules in different bound environments,30,49 leading to peak separation at low temperatures. The addition of G2 and BTFE in Mg(TFSI)2/CEPE effectively enhances the exchange rate, owing to the absence of such undercoordination behavior. This is because G2 is known to exchange much faster than DME while BTFE barely coordinates with Mg2+,30 in turn indicating decreased Mg2+–glyme interaction by co-ethers. This is verified by the blue shift and decreased intensity of coordinated glyme signals in the Raman spectra (Fig. 3(f)),12,34 As a consequence, a lower desolvation penalty can be expected in Mg(TFSI)2/CEPE, which explains the much enhanced kinetics of Mg plating/stripping relative to Mg(TFSI)2/DME:TEP (Fig. 1).
The structural characteristics and chemical mapping of these interfaces formed on Mg were further probed using cryogenic focused ion beam (Cryo-FIB) milling and transmission electron microscopy (TEM). Fig. 6(a) and (b) shows the high-angle annular dark-field (HAADF) images at the surface of Mg deposited in Mg(TFSI)2/CEPE and Mg(TFSI)2/DME:TEP, along with maps showing the Mg/S and Mg/F elemental distribution. Trace amounts of S and F can be observed on the Mg surface that originate from the formation of a very thin SEI. This is in good accord with the XPS results above. The thickness cannot be well defined due to the low quantity of S/F present that is comparable to the background noise. In contrast, in baseline Mg(TFSI)2/DME (Fig. 6(c)), a ∼30 nm thick S-rich and F-rich passivation layer is formed. In addition to the accumulation of S/F at the interface, significant amounts decorate the underlying Mg region. In both Mg(TFSI)2/DME:TEP and Mg(TFSI)2/CEPE, the S/F species were greatly diminished at both surface and Mg regions, as confirmed by EDX line scan analysis (Fig. 6(d)–(f) and Fig. S29, ESI†).
Footnote |
| † Electronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d3ee02861e |
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