Open Access Article
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Correction: Solution-processable Li-doped transition metal oxide hole-injection layer for highly efficient quantum-dot light-emitting diodes
Jae Seung
Shin
ab,
Mingye
Kim
ab,
Jin Hyun
Ma
a,
Jun Hyung
Jeong
a,
Hui Ung
Hwang
cd,
Jeong Won
Kim
cd and
Seong Jun
Kang
*ab
aDepartment of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, 17104, Republic of Korea. E-mail: junkang@khu.ac.kr; Tel: +82-31-201-3324
bIntegrated Education Institute for Frontier Science & Technology (BK21 Four), Kyung Hee University, Yongin, 17104, Republic of Korea
cKorea Research Institute of Standards and Science (KRISS), 267 Gajeong-ro, Daejeon, 34113, South Korea
dUniversity of Science and Technology (UST), 217 Gajeong-ro, Daejeon, 34113, South Korea
First published on 9th August 2023
Abstract
Correction for ‘Solution-processable Li-doped transition metal oxide hole-injection layer for highly efficient quantum-dot light-emitting diodes’ by Jae Seung Shin et al., J. Mater. Chem. C, 2022, 10, 5590–5597, https://doi.org/10.1039/D1TC06117H.
The authors regret that one of the authors’ names (Hui Ung Hwang) was spelled incorrectly in the originally published article. The correct spelling is as shown above.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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