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Correction: Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials
Shu
An†
,
HyunJung
Park†
and
Munho
Kim
*
School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore. E-mail: munho.kim@ntu.edu.sg
First published on 2nd March 2023
Abstract
Correction for ‘Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials’ by Shu An et al., J. Mater. Chem. C, 2023, 11, 2430–2448, https://doi.org/10.1039/d2tc05041b.
The authors wish to note that in the published article, both the first and second authors should be marked with the † footnote symbol to indicate that they contributed equally.
† These authors contributed equally.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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