Bowen Zhanga and
Yang Qi*ab
aDepartment of Materials Physics and Chemistry, School of Materials Science and Engineering, State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang, Liaoning 110819, PR China. E-mail: qiyang@imp.neu.edu.cn
bKey Laboratory for Anisotropy and Texture of Materials, Ministry of Education, Northeastern University, Shenyang, 110819, P. R. China
First published on 8th June 2023
In order to increase the critical current density of Bi2212 superconducting films to broaden their application areas. A series of Bi2Sr2CaCu2O8+δ–xRE2O3 (RE = Er/Y) (x = 0, 0.04, 0.08, 0.12, 0.16, 0.20) thin films were prepared by the sol–gel method. The structure, morphology and superconductivity of the RE2O3 doping films were characterized in detail. The effect of RE2O3 on the superconductivity of Bi2212 superconducting films was investigated. It was shown that the Bi2212 films were (00l) epitaxially grown. The in-plane orientation relationship between the Bi2212–xRE2O3 and the SrTiO3 was Bi2212[100](001)//SrTiO3[011](100). The grain size in the out-of-plane direction of Bi2212 tends to increase with the amount of RE2O3 doping. Doping with RE2O3 had no significant effect on the anisotropy of Bi2212 crystal growth, but inhibited the agglomerative growth of the precipitated phase on the surface to a certain extent. Furthermore, the conclusion was that the superconducting transition temperature (Tc,onset) was almost unaffected, while the zero resistance transition temperature (Tc,zero) continued to decrease with increasing doping level. The thin film samples Er2 (x = 0.04) and Y3 (x = 0.08) exhibited the best current-carrying capacity in magnetic fields.
Rare earth elements exhibit special physical and chemical properties in the fields of optics, electricity and magnetism due to their unique electronic structure. Rare earth metals and their compounds have good applications. Rare earth elements play an important role in almost all high-temperature superconducting materials. For example, the addition of Sm2O3 nanoparticles improved electrical transport properties of Bi2223 at very low doping levels.10 The addition of small amounts of Nb improved the Bi2223 grain boundary connectivity, resulting in better superconductivity of the BSCCO system.11 In addition, the substitution of rare earth ions is an effective means to improve the superconducting transition temperature and critical current density by adjusting the phase structure and microstructure.12–15 Besides, rare earth elements are also widely used in the REBCO family. Substitution of Y by RE elements can improve their superconductivity properties in different ways, such as lower processing temperature and wider processing window for smaller RE ions16,17 and higher critical transition temperature for larger RE ions.18,19
The main factors that reduce the critical current density of HTSC are grain boundaries and poor flux pinning.20 Low values of critical current density at grain boundaries in polycrystalline samples are an important issue for high current applications, for which increasing the critical current density is a key issue. The nanoscale superconductivity has attracted much attention during the past decades.21–23 The presence of flux pinning centers in non-ideal class II superconductors due to crystal structure defects will greatly increase their current-carrying capacity in both self-magnetic fields and external magnetic fields, making high-temperature superconductors extremely promising for applications in the strong direction. The property led scientists to search for forms of high-temperature superconductors with stronger current-carrying capacity by artificially designing the shape, density and distribution of pinning centers.24–27 Related studies have shown that the nanoscale second phase has superior properties Jc values as a pinning center for superconductors. In contrast, the effect of doping of Er and Y elements on Bi2212 has rarely been investigated.
We have conducted extensive studies on the preparation of Bi2212 superconducting films by sol–gel method with aqueous solvents.28–31 It was shown that this environmentally friendly and low-cost method can prepare high quality Bi2212 superconducting films. At the same time, the sol–gel method can maintain homogeneity at the atomic level. Therefore, the method offers irreplaceable advantages for the preparation of highly dispersive doped Bi2212 samples as well.
In this chapter, Bi2212 superconducting films with different RE (RE = Er/Y) doping amounts were prepared on SrTiO3(100) substrates using the sol–gel method. To investigate the optimal conditions for RE2O3 doping of Bi2212 superconducting films. And to explore its effects on the crystallographic properties, surface morphology and electrical transport properties of Bi2212 superconducting films.
After coating the sol–gel films on the SrTiO3(100) substrate, the precursor films were heated at 413 K for 40 min to form the precursor films. To obtain a certain thickness of sample, this process was repeated three times. The samples were then heat treated in the tube furnace with a sintering temperature of 1098 K and a holding time of 35 min to form the final Bi2212 films. The Bi2212–xEr2O3 samples were named as the Er group, named Er1–Er6 in that order. The Bi2212–xY2O3 samples were named as the Bi2212–xY2O3 samples were named as Y group and named as Y1–Y6 in order. All the samples were sintered at 1098 K with a holding time of 35 min.
The phase composition and crystallinity of the superconducting films were characterized by a Rigaku-Smart Lab X-ray diffractometer (Cu-Kα radiation). The θ–2θ scan range was 3°–50°, with a scan step of 0.02° and a scan speed of 1° min−1. The Phy scan and swing curves of the films were characterized by a Smartlab(3) X-ray diffractometer (Cu-Kα radiation). The surface morphology of the Bi2212 superconducting films was observed by field emission scanning electron microscopy (FESEM) (Zeiss). The surface structure was further investigated by atomic force microscopy (AFM) (Nanoscan Easy2) and the surface roughness of the samples was counted, using a non-contact tap mode. X-ray photoelectron spectroscopy (XPS) was obtained using a Kratos-Axis Supra from Shimadzu Corporation, Japan. X-ray photoelectron spectrometer. The superconducting properties of the samples were measured by the standard four-probe method. The Physical Property Measurement System (PPMS) measures in the temperature range of 2–300 K and in the magnetic fields range of 0–9 T.
XBi2212 = (θBi2201 − θ)/(θBi2212 − θBi2201) | (1) |
Fig. 1 XRD patterns of the samples. (a) XRD patterns of samples Er1–Er6. (b) XRD patterns of samples Y1–Y6. (c) FWHM variation of RE-doped Bi2212 superconducting films. |
Sample | Doping amount/% | (002) peak position/° | XBi2212/% | (002) FWHM/° | Grain size/nm | Rms/nm |
---|---|---|---|---|---|---|
Er1 | 0.00 | 5.79 | 97.1 | 0.33 | 26.2 | 12.2 |
Er2 | 0.04 | 5.77 | 98.3 | 0.30 | 29.6 | 11.9 |
Er3 | 0.08 | 5.81 | 95.8 | 0.30 | 28.2 | 17.3 |
Er4 | 0.12 | 5.81 | 95.8 | 0.28 | 29.2 | 11.4 |
Er5 | 0.16 | 5.81 | 95.7 | 0.27 | 31.1 | 11.0 |
Er6 | 0.20 | 5.81 | 95.9 | 0.25 | 31.5 | 10.9 |
Y1 | 0.00 | 5.79 | 97.2 | 0.34 | 24.9 | 9.6 |
Y2 | 0.04 | 5.79 | 97.2 | 0.30 | 28.4 | 11.1 |
Y3 | 0.08 | 5.79 | 96.9 | 0.30 | 27.6 | 12.1 |
Y4 | 0.12 | 5.79 | 97.0 | 0.29 | 30.5 | 14.7 |
Y5 | 0.16 | 5.81 | 95.8 | 0.28 | 32.9 | 15.3 |
Y6 | 0.20 | 5.81 | 95.7 | 0.27 | 33.5 | 13.1 |
In order to further analyze the crystallinity of the samples, the half-height widths (FWHM) and grain sizes were counted and the information was shown in Table 1. The grain sizes were calculated from the Scherrer formula. The results showed that the Bi2212 sample had good crystallinity and there was an increasing trend of grain size with increasing RE2O3 doping in the out-of-plane direction of the sample, as shown in Fig. 1(c). This may be due to the addition of the second phase reducing the microstrain in the film matrix. It resulted an increase in the grain size of the film.35,36 In summary, Bi2212–xRE2O3 (RE = Er/Y) superconducting films with high phase purity and good crystalline quality were fabricated on SrTiO3(100) substrates.
XRD-φ scans was used to analyze the in-plane orientation relationships of samples Er6 and Y6. XRD patterns were shown in Fig. 2. The φ-scan of the Bi2212(115) and SrTiO3(110) of sample Er6 were shown in Fig. 2(a), and the φ-scan XRD patterns of the Bi2212(115) and SrTiO3(110) of sample Y6 were shown in Fig. 2(d). As can be seen from the figures, both Er6 and Y6 exhibited good quadratic symmetry. φ diffraction peaks on the (115) face of Er6 were 80.9°, 170.9°, 260.9° and 350.9°, which were consistent with those on the SrTiO3(110) face. φ diffraction peaks on the (115) face of Y6 were 66.1°, 156.1°, 246.1° and 336.1°, which were consistent with the φ diffraction peak positions of the SrTiO3(110) crystal plane. The pole figures were shown in Fig. 2(g)–(j). It can be clearly found that Bi2212 had quartic symmetry. The crystal plane (115) had four clear diffraction poles at α = 58°, and no other poles, indicating that the plane had only one growth orientation. The SrTiO3 single crystal substrate (110) plane also had four clear diffraction poles only at α = 45°. This shows that the Bi2212 phase also exhibited quartic symmetry and had only one orientation. On this basis, the in-plane epitaxial matching relation of thin films was further proved by the calculation of crystal band theorem. According to the crystal band theorem, the index [uvw] of the axial axis T of the crystal band can be expressed as (2)
(2) |
It was calculated that [10] was the crystal band axis of Bi2212(00l) crystal plane with the (115) crystal plane. Similarly, it followed that [00] was the crystal band axis between the SrTiO3(100) crystal plane and the (110) crystal plane. Therefore, the in-plane matching relation between the Bi2212 substrate and the SrTiO3(100) substrate was Bi2212[100](001) ∥ STO[011](100). Meanwhile, Fig. 2(b) and (c) showed the ω-scan XRD patterns of Bi2212(0010) and (115) for the Er6 sample, and Fig. 2(e) and (f) showed the ω-scan XRD patterns of Bi2212(0010) and (115) for the Y6 sample, and it can be found that the in-plane and out-plane crystallinity of the Bi2212 superconducting films were good. The results showed that RE2O3 doping did not change the (00l) epitaxial growth characteristics of all the Bi2212 superconducting films on SrTiO3(100) single crystal substrates, and the films had good crystallinity.
The surface morphology of samples Er1–Er6 was characterized by FESEM and AFM, as shown in Fig. 3. Fig. 3(a)–(c) and (g)–(i) showed the SEM images of Er1–Er6, respectively. Fig. 3(d)–(f) and (j)–(l) showed the AFM images of Er1–Er6, respectively. It can be observed that the surfaces of all samples were continuous and smooth. In addition to this, the surface of the film showed mainly a lamellar structure. This was mainly due to the anisotropy of the Bi2212 growth rate. The fast in-surface growth rate resulted in a two-dimensional characteristic shape of the sample.37 The surface morphology and structure of the samples Er1–Er6 was further characterized by AFM, and as can be seen in Fig. 3(d)–(f) and (j)–(l), the lamellar morphology of the films was characterized, in agreement with the FESEM images. The surface roughness of Er1–Er6 was 12.2 nm, 11.9 nm, 17.3 nm, 11.4 nm and 11.0 nm. The roughness statistics were shown in Table 1. The doping of Er2O3 did not significantly change the surface roughness. The addition of Er2O3 inhibited the enrichment and growth of the precipitated phase particles, resulting in a uniform and diffuse distribution of the precipitated phase particles. The surface morphology of samples Y1–Y6 was also characterized by FESEM and AFM, as shown in Fig. 3. Fig. 3(m)–(r) showed the SEM images of Y1–Y6, and Fig. 3(s)–(x) showed the AFM images of Y1–Y6, respectively. It can be found that the surfaces of the Y1–Y6 samples continued to show a continuous and smooth lamellar morphology. The surface roughness of Y1–Y6 was 9.6 nm, 11.1 nm, 12.1 nm, 14.7 nm, 15.3 nm and 13.1 nm, respectively. The specific roughness was shown in Table 1.
The elemental distributions of the Er6 and Y6 samples were characterized by EDS spectroscopy, respectively. The results were shown in Fig. 4. Fig. 4(a) showed the surface morphology of the Er6 sample and its distribution of Bi, Ca, Cu, and Er elements, while Fig. 4(b) showed the surface morphology of the Y6 sample and its distribution of Bi, Ca, Cu, and Y elements. The distribution of Sr elements was not characterized because the SrTiO3 single crystal substrate contained Sr elements. From the figure, it can be observed that the three elements Bi, Ca and Cu were uniformly distributed without component segregation in the Er6 and Y6. Similarly, no segregation was observed for Er and Y, demonstrating that Er and Y were uniformly and diffusely distributed in the film matrix.
The XPS spectra of samples Er6 and Y6 were shown in Fig. 5 to further confirm the presence of the doping elements in Bi2212 and their chemical valence. Both spectra in Fig. 5(a) and (c) confirmed the presence of bismuth, strontium, calcium, copper, oxygen and carbon in both samples, with a binding energy of 284.8 eV for C 1s, which was typical for C–C compounds and used for reference correction. The fit of Er 4d showed a peak at 168 eV as shown in Fig. 5(b), which was consistent with previously reported data.38 In Fig. 5(d), the Y 3d spectrum was decomposed into two peaks at 160.5 eV and 158.3 eV, corresponding to the high bound state of Y 3d3/2 and the low bound state of Y 3d5/2, respectively. These two peaks were typical of Y2O3 and indicate the presence of the Y3+ oxidation state in the sample.39
Fig. 5 XPS spectra of (a) survey scan of Er6; (b) Er region of Er6; (c) survey scan of Y6; (d) Y region of Y6. |
The electrical transport properties of the Bi2212 superconducting films were shown in Fig. 6, where Fig. 6(a) showed the electrical transport properties of the sample Er group of samples. Fig. 6(b) showed the temperature dependence of the resistance of the Er2 sample in a magnetic field from 0 T to 9 T. Fig. 6(c) showed the temperature dependence of the irreversibility field of Hirr ∝ (1 − T/Tc)β40–42 (black line) fitted to Er2, with the specific information shown in Table 2. As seen in Fig. 6(a), the sample exhibited good metallic state resistance behavior characteristics in the temperature range of 300–120 K under a magnetic field of 0 T. The temperature–resistance curve was linearly dependent. As the temperature continued to decrease, the R–T curve began to deviate from the linear relationship and the resistance value decreased sharply, at which point it was the superconducting transition process. As the temperature continued to decrease, the resistance value of the film dropped to zero, at which point the sample completed. The Tc,onset values of Er1–Er6 were 92.7 K, 92.7 K, 92.1 K, 92.0 K, 93.2 K and 91.8 K. The Tc,onset values only decreased slightly at higher doping levels. This highly diffusely distributed second phase benefited from the intrinsic advantages of the sol–gel method. The atomic-level homogeneity ensured during the preparation process then greatly avoided the production of hard agglomerates of Bi2212 precursors while suppressing the agglomerative growth of the second phase material. This was a prerequisite for our preparation of Bi2212–xRE2O3 (RE = Er/Y) with good superconductivity. The Tc,zero values were 81.9 K, 81.4 K, 79.1 K, 77.8 K, 69.3 K and 57.2 K. It can be seen that the Tc,zero values decreased monotonically with increasing doping levels. The presence of second phase material in the film. This increased the thickness of the insulating grain boundaries in the film matrix. Then, it led to an increase in the intergranular coupling energy required for the superconducting current to pass through the penetration. Thus, more grain boundary regions were required for the superconducting current to flow through to complete the superconducting transition.
Sample | Tc,onset/K | Tc,zero/K | ΔTc/K |
---|---|---|---|
Er1 | 92.7 | 81.9 | 10.8 |
Er2 | 92.7 | 81.4 | 11.3 |
Er3 | 92.1 | 79.1 | 13.0 |
Er4 | 92.0 | 77.8 | 14.2 |
Er5 | 93.2 | 69.3 | 23.9 |
Er6 | 91.8 | 57.2 | 34.6 |
Y1 | 90.9 | 80.1 | 10.8 |
Y2 | 92.8 | 81.4 | 11.4 |
Y3 | 92.5 | 80.7 | 11.8 |
Y4 | 93.6 | 80.8 | 12.8 |
Y5 | 90.8 | 68.4 | 22.4 |
Y6 | 90.3 | 60.0 | 30.3 |
Increasing the magnetic field from 0 T to 9 T, the R–T curves of the Er2 sample in the magnetic field from 0 T to 9 T were shown in Fig. 6(b), the sample still showed good metallic state resistance behavior characteristics in the temperature range of 300–120 K; when the temperature continued to decrease, the R–T curve started to deviate from the linear relationship, the resistance value decreased sharply and the superconducting transition process began. As the magnetic field increased, Tc,zero obviously moved in the direction of low temperature, and the value of ΔTc gradually increased. This was due to the fact that when the external magnetic field Hc1 < H < Hc2, the magnetic lines of force formed a normal state core in the form of a two-dimensional pie-shaped flux vortex in the high-temperature superconductor, surrounded by a superconducting current externally. As the external magnetic field increased, resulting in an increasing normal-state core region, a decreasing superconducting fraction, a decreasing Tc,zero with increasing magnetic field and an increasing ΔTc value.43 The irreversibility field (Hirr) of the Er2 sample was fitted by eqn (3) and the results were shown in Fig. 6(c).
Hirr ∝ (1 − T/Tc)β | (3) |
The effect of Er2O3 on the critical current density (Jc) of Bi2212 superconducting films was shown in Fig. 7. The external magnetic field was tested perpendicular to the surface of Bi2212 superconducting films (M ⊥ ab-plane) with a maximum magnetic field of 9 T. The variation of Jc with doping level for the samples in the Er group at 10 K was shown in Fig. 7(c). It can be seen from the figures that Jc decreased with increasing magnetic field for all samples. The decay rate decreased gradually, which was due to the joint result of the intrinsic pinning of the thin film samples and the Er2O3 pinning, which was stronger at higher magnetic fields, in agreement with the above results. In addition, it can be seen that sample Er2 exhibited the highest Jc value of 5.5 × 104 A cm−2 compared to that of undoped sample Er1 under self-field (4.0 × 104 A cm−2), and the current-carrying capability of Er3 (4.1 × 104 A cm−2) was also better than that of Er1. In order to observe more intuitively the effect of Er2O3 phase doping on Jc of the Bi2212–Er-group samples, the variation of Jc with magnetic field for the Er group sample at 10 K was given in Fig. 7(b). The doping of Er2O3 phase significantly increased Jc of the Bi2212 superconducting films and reached the maximum value at 0.04 doping level, reaching 5.5 × 104 A cm−2 at 4.2 K self-field and 3.2 × 104 A cm−2 at 1 T vertical external field. And Er3 also showed good current-carrying capability. However, the Jc values of the samples decreased with further doping, which was attributed to the creation of excessive second-phase defects in the samples that destroyed the superconducting region and the pinning center density exceeded the coherence length of the Bi2212 films resulting in a lower Jc. To further investigate the effect of the Er2O3 doping density on the film properties, we calculated the macroscopic pinning force Fp = Jc × M of the samples, which is the main means to assess the flux pinning performance of superconductors. Fig. 7(d) showed the Fp for the Bi2212 films of the Er group. Sample Er2 exhibited the largest pinning force in different magnetic fields Fp. Therefore, the best pinning effect can be obtained for Er2. At this point the doping of the second phase Er2O3 had a more significant effect on the pinned Bi2212 superconducting film.
The effect of Y2O3 on the Jc of Bi2212 superconducting films was shown in Fig. 8. It can be seen from the figures that the variation pattern of Jc for all samples was consistent with that of the Er group samples. Also, it can be seen that sample Y3 exhibited the highest Jc value of 6.2 × 104 A cm−2 compared to that of undoped sample Y1 at self-field (4.1 × 104 A cm−2), and the current-carrying capacity of Y2 and Y4 (5.8 × 104 A cm−2 and 6.0 × 104 A cm−2) was also better than that of Y1. The variation of Jc with magnetic field for group Y samples at 10 K was also given in Fig. 8(b). The doping of the Y2O3 phase significantly increased the critical current density of the Bi2212 superconducting films and reached a maximum at a doping level of 0.08, reaching a critical current density of 6.2 × 104 A cm−2 at 10 K for the self-field and 4.3 × 104 A cm−2 at 1 T for the vertical external field. However, the Jc values of the samples decreased with further increase in doping. Sample Y3 exhibited the maximum pinning force Fp in different magnetic fields. Therefore, the best pinning effect for Y3 can be obtained. At this point, the doping amount of the second phase Y2O3 had a more significant effect on the nailing of Bi2212 superconducting films. The comparison of critical current densities Jc of different oxide doping was listed in Table 3. The comparison showed that the doping of RE2O3 was also an effective method to improve the critical current density.
Materials | Oxide doping | Jc (A cm−2, maximum value) | Ref. |
---|---|---|---|
Bi2212 | Er2O3 | 6.1 × 104 (4.2 K) | This work |
Bi2212 | Er2O3 | 5.9 × 104 (10 K) | This work |
Bi2212 | Y2O3 | 6.4 × 104 (4.2 K) | This work |
Bi2212 | Y2O3 | 6.2 × 104 (10 K) | This work |
Bi2212 | NiO | 5.1 × 104 (10 K) | 44 |
Bi2212 | NiO | 3.2 × 104 (40 K) | 44 |
Bi2212 | Al2O3 | 1.7 × 102 (77 K) | 45 |
Bi2212 | MgO | 1.5 × 104 (77 K) | 46 |
Bi2212 | Pb2O3 | 6.8 × 103 (4.2 K) | 47 |
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