Jonathan R.
Chin
a,
Marshall B.
Frye
a,
Derrick Shao-Heng
Liu
b,
Maria
Hilse
c,
Ian C.
Graham
a,
Jeffrey
Shallenberger
c,
Ke
Wang
c,
Roman
Engel-Herbert
d,
Mengyi
Wang
b,
Yun Kyung
Shin
e,
Nadire
Nayir
ef,
Adri C. T.
van Duin
e and
Lauren M.
Garten
*a
aThe School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA. E-mail: lauren.garten@mse.gatech.edu
bDepartment of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
cMaterials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
dPaul-Drude Institut für Festkörperelektronik Berlin, Leibniz-Institut im Forschungsverbund Berlin eV., Berlin 10117, Germany
eDepartment of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
fPhysics Department, Karamanoglu Mehmetbey University, Karaman, 70000, Turkey
First published on 25th October 2023
Correction for ‘Self-limiting stoichiometry in SnSe thin films’ by Jonathan R. Chin et al., Nanoscale, 2023, 15, 9973–9984, https://doi.org/10.1039/D3NR00645J.
The work presented has been facilitated by the Materials Innovation Platform of The Pennsylvania State University, i.e., the Two-Dimensional Crystal Consortium (2DCC-MIP) supported by NSF through cooperative agreements no. DMR-1539916 and DMR-2039351. DSHL acknowledges the support of the center for 3D Ferroelectric Microelectronics (3DFeM), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences Energy Frontier Research Centers program under Award Number DE-SC0021118. JC acknowledges the support of the National Science Foundation (NSF) Graduate Research Fellowship Program under Grant No. DGE-2039655. This work is supported by the Air Force Office of Scientific Research (AFOSR) under award number FA9550-22-1-0237.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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