Correction: Research progress in architecture and application of RRAM with computing-in-memory

Chenyu Wang; Ge Shi; Fei Qiao; Rubin Lin; Shien Wu; Zenan Hu

doi:10.1039/D3NA90030D

View PDF VersionPrevious ArticleNext Article

Open Access Article

This Open Access Article is licensed under a
Creative Commons Attribution 3.0 Unported Licence

DOI: 10.1039/D3NA90030D (Correction) Nanoscale Adv., 2023, 5, 2118-2118

Correction: Research progress in architecture and application of RRAM with computing-in-memory

Chenyu Wang ^a, Ge Shi *^a, Fei Qiao ^b, Rubin Lin ^a, Shien Wu ^a and Zenan Hu ^a
^aCollege of Mechanical and Electrical Engineering, China Jiliang University, Hangzhou 310018, People's Republic of China. E-mail: shige@cjlu.edu.cn
^bDept of Electronic Engineering, Tsinghua University, Beijing 100084, People's Republic of China

Received 10th March 2023 , Accepted 10th March 2023

First published on 20th March 2023

Abstract

Correction for ‘Research progress in architecture and application of RRAM with computing-in-memory’ by Chenyu Wang et al., Nanoscale Adv., 2023, https://doi.org/10.1039/d3na00025g.

The authors regret that the author Ge Shi was not marked as the corresponding author and the affiliations were incomplete in the original manuscript. The corrected author list and affiliations are listed here.

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.