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Correction: Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer
Se Hyun
Kim
a,
Geun Taek
Yu
a,
Geun Hyeong
Park
a,
Dong Hyun
Lee
a,
Ju Yong
Park
a,
Kun
Yang
a,
Eun Been
Lee
a,
Je In
Lee
*a and
Min Hyuk
Park
*ab
aSchool of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea. E-mail: jilee@pnu.ac.kr
bDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea. E-mail: minhyuk.park@snu.ac.kr
First published on 17th February 2023
Abstract
Correction for ‘Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer’ by Se Hyun Kim et al., Chem. Commun., 2021, 57, 12452–12455, https://doi.org/10.1039/D1CC04966F.
The authors regret that the following acknowledgement was not included in the original article:
SHK was supported by the BK21 FOUR Program of the Pusan National University Research Grant, 2021.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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