Michael
Purdy
a,
Kealan
Fallon
a,
Daniel G
Congrave
a,
Daniel T. W.
Toolan
b,
Weixuan
Zeng
a and
Hugo
Bronstein
*a
aDepartment of Chemistry, University of Cambridge, Cambridge, CB2 1EW, UK. E-mail: hab60@cam.ac.uk
bDepartment of Chemistry, The University of Sheffield, Sheffield, S3 7HF, UK
First published on 20th May 2022
Indolonaphthyridines (IND) are valuable chromophores with wide-ranging optoelectronic applications. Here, we present a new class of asymmetric IND derivatives, synthesised using novel high yielding methodology. We compare the absorption properties and excited state charge-transfer character of the novel assymetric INDs with symmetric IND. We show IND assymetry increases the change in dipole moment from ground to excited state. By determining the magnitude of the excited state dipole moment of each IND derivative, we also show assymetry increases excited state charge-transfer character. Quantum calculations indicate this is a consequence of increased spatial separation between excited state electron and hole wavefunctions for the assymetric INDs. Charge-transfer features can significantly benefit many optoelectronic processes, therefore the structure-property relationships introduced in this work provide invaluable design principles for the generation of high performance materials.
Molecular desymmetrisation is one method that can be used to tune the optoelectronic properties of OSCs and has been widely investigated in a variety of systems. Asymmetric diketopyrrolopyrrole (DPP) polymers have shown enhanced solubility and superb performance in OFET and OSC devices.8–14 Ji et al. reported a series of DPP polymers with translational asymmetry along the conjugated backbone due to different thienyl substituents flanking the DPP core. The polymers exhibited high device performance due to significant thin-film crystallinity and were solution processed using non-polar solvents.13 Wang et al. considerably enhanced the FET hole mobility of a DPP polymer by inducing alkyl chain asymmetry. By replacing one of the two branched alkyl chains on the DPP core with a linear chain, the interchain packing order and thin-film crystallinity were significantly improved.8 Asymmetric arene diimides have also shown fascinating optoelectronic properties and excellent device performance.15–17
Asymmetry can enhance the excited state charge-transfer character of chromophores, wherein increased separation between electron and hole wavefunctions occurs after photoexcitation. Charge-transfer states have been shown to improve the performance of many optoelectronic applications. Charge-transfer states can increase the rate of singlet fission by mediating electronic coupling to a spin correlated triplet pair state involved in the mechanism. Charge-transfer states can also improve charge generation in organic solar cells and dye-sensitized solar cells by facilitating charge seperation.18–20
Indolonaphthyridine (IND), a bay-annulated indigo derivative, is a highly versatile chromophore for organic electronic applications. IND polymers and small molecules have been utilised in high-performance OFETs, OSCs, photodetectors and for photoacoustic imaging.21–27 More recently, functionalised IND small molecules have been shown to undergo singlet fission, an exciton multiplication process that could be used to overcome the Shockley–Queisser limit placed on solar cells.28
Indolonaphthyridine thiophene (INDT) consists of an electron deficient IND core flanked by two thiophene (T) groups and is synthesised via an indigo double bay-annulation reaction.25 The planar aromatic core of INDT enables strong π–π stacking interactions which facilitates efficient charge transport but can also lead to poor solubility.21 To address this, solubilising alkyl chains can be incorporated onto the IND core or thiophene groups, both of which suppress interchromophore interactions and enable solution processability.21,23,24 The energy levels of INDT small molecules can be tuned via functionalisation of the indigo core. The thiophene groups can also act as a conjugating pathway to generate narrow band-gap polymers.27,28
Kolaczkowski et al. first reported desymmetrised INDT structures which were synthesised via step-wise bay annulation of indigo using different aromatic acetyl chlorides.29 Here, asymmetry originated from the INDT core being flanked by different aryl groups, one thiophene and one phenyl, which enabled selective monobromination and synthesis of larger donor–acceptor constructs. However, the reliance on a condensation reaction using aromatic acetyl chlorides as the only method of indigo bay annulation resulted in asymmetric structures that were limited to only phenyl and thienyl groups. Here, we offer a new innovative methodology to generate desymmetrised IND structures that have only one aromatic group flanking the core. We introduce novel indigo bay annulation reactions that are facile and high yielding. As the novel chromophore contains only half the solubilising groups of a symmetric IND, we also develop a novel synthesis of an alkylated indigo, which ensures heightened control over the materials solubility. Notably, the removal of a flanking aromatic unit leads to a wider band gap material with blue shifted absorption characteristics, thus fine tuning the excited state energy levels for singlet fission solar cell applications. Furthermore, we use absorption and emission spectroscopy, in conjunction with quantum calculations, to show desymmetisation leads to enhanced excited state charge-transfer character of INDTs. As stated previously, charge transfer states can improve the performance of many optoelectronic processes. Therefore the enhanced excited state charge transfer character of the asymmetric IND derivatives could potentially generate exceptionally high-performance materials.
All three materials showed strong absorption in the red region of the visible spectrum (Fig. 1). The optical band gaps of S-INDT, AE-INDT and AH-INDT are estimated from the onset of the solution state absorption spectrum presented in Fig. 1, and are found to be 1.91 eV, 2.00 eV and 2.05 eV respectively. Reduced conjugation length throughout the IND core therefore increases the optical band-gap. Time-dependent density functional theory (TD-DFT) calculations of optimised structures presented in Table S1, ESI† reflect this trend. The extinction co-efficients of S-INDT, AE-INDT and AH-INDT are 13000, 6700 and 7100 M−1 cm−1 respectively. The photoluminescent quantum yields in solution of S-INDT, AE-INDT and AH-INDT are 62%, 23% and 22%. These optical measurements show the asymmetric IND derivatives have reduced absorption and photoluminescence strength relative to S-INDT. This was verified computationally, where the oscillator strengths of the S1 transition were estimated from TD-DFT calculations and found to be larger for S-INDT (0.75) relative to AE-INDT (0.54) and AH-INDT (0.47). Interestingly, the HOMO–LUMO overlap integral was calculated to be approximately the same for each INDT derivative. The reduced oscillator strength of the AE-INDT and AH-INDT S1 transition is therefore likely a consequence of other complex factors that affect the transition dipole moment and not a result of reduced frontier molecular overlap (i.e. direct CT character).
The solution state absorption and photoluminescence were measured in a range of solvents of different polarities (Fig. 2). In general, we observed that the symmetrical derivative displayed very little solvatochromic behaviour, whereas the two new asymmetric materials showed a range of behaviour on increasing solvent polarity.
We investigated the differences in dipole moment change from ground to excited state (Δμge) using the Lippert–Mataga equation, wherein the Stokes shift (vss) of each derivative in different solvents is plotted against solvent orientation polarizability (Δf).31
The change in dipole moment (Δμge) is estimated from the gradient of a Lippert–Mataga plot (Fig. 2). All three INDT derivatives showed increasing vss with Δf however at different rates of change. S-INDT had the lowest rate of change and a value of 4.67 D was determined for Δμge. AE-INDT Stokes shift also gradually increases with increasing Δf but at a higher rate than S-INDT and a value of 5.74 D was determined for Δμge. AH-INDT has the highest rate of Stokes shift increase with increasing Δf and a value of 6.91 D is determined for Δμge.
DFT calculations were used to estimate the ground state dipole moment (μg). S-INDT was predicted to have the lowest μg (0.19 D) due to increased molecular symmetry. AE-INDT was predicted to have a higher μg than AH-INDT, with 2.69 D and 1.48 D respectively. This is likely due to the presence of an electron withdrawing ester group extended from the core of AE-INDT which would create a more electronically polarised ground state.
The excited state dipole moment (μe) of each IND derivative was determined using the experimentally determined Δμge and μg estimated from DFT. S-INDT was found to have the lowest value of 4.8 D. AE-INDT and AH-INDT were determined to have approximately the same μe with 8.43 D and 8. 39 D respectively. Thus AE-INDT and AH-INDT have larger excited state dipole moments relative to S-INDT and therefore have increased charge-transfer state contribution to the excited state.
The excited state charge transfer length (D) is the predicted distance between the centroid of the electron and hole in the excited state and was estimated to be lower for S-INDT (0.08 Å) relative to AE-INDT (0.74 Å) and AH-INDT (0.76 Å) in the S1 state. The Sr index estimates the overlap of the electron and hole wavefunction and was estimated to be the same for each INDT derivative (Table 1). The larger μe determined for AE-INDT and AH-INDT relative to S-INDT is therefore likely due to increased spatial separation between the centre of charges in the S1 state.
Molecule | Optical band gapa (eV) | S1 state energyb (eV) | Oscillator strength of S1 transitionc | HOMO–LUMO overlap integrald | Extinction coefficiente (1 × 104 M−1 cm−1) | μ g (D) | Δμge of S1 state excitationg (D) | μ e of S1 stateh (D) | D index (Å) S1 statei | Sr index (a.u.) S1 statej | PLQYk (%) |
---|---|---|---|---|---|---|---|---|---|---|---|
a Optical band gaps estimated from on-set of UV-Vis absorption spectra. b Energies of the first singlet (S1) excited states. c Estimated oscillator strength of S1 transition from multiwfn calculation. d Estimated HOMO–LUMO overlap integral from multiwfn calculation. e Extinction coefficient extrapolated from change in UV-Vis absorption intensity with sample concentration. f Ground state dipole moment taken from DFT optimised structures. g Change in dipole moment extrapolated from Lippert–Mataga plot. h Excited state dipole moment calculation from a and b. i The excited state charge-transfer length calculated using multiwfn. j The overlap of the electron and hole wavefunction calculated using multiwfn. k PLQY measurements performed in tetrahydrofuran solution. | |||||||||||
S-INDT | 1.91 | 2.42 | 0.75 | 0.80 | 1.30 | 0.19 | 4.67 | 4.86 | 0.08 | 0.76 | 62 |
AE-INDT | 2.00 | 2.51 | 0.54 | 0.80 | 0.67 | 2.69 | 5.74 | 8.43 | 0.74 | 0.76 | 23 |
AH-INDT | 2.05 | 2.62 | 0.47 | 0.79 | 0.71 | 1.48 | 6.91 | 8.39 | 0.76 | 0.76 | 22 |
The structure of the thin-film absorption spectra relative to solution-state is considerably altered for AE-INDT and AH-INDT relative to S-INDT (see ESI†). This indicates IND asymmetry results in considerably different solid state interactions. AE-INDT and AH-INDT both exhibit predominantly H-like aggregation in the solid state, wherein the solid-state absorption maximum is hypsochromically shifted relative to the solution-state absorption maximum. S-INDT however exhibits solid-state J-like aggregation, wherein the solid-state absorption maximum is bathochromically shifted relative to the solution-state absorption maximum. Grazing incidence wide-angle X-ray scattering (GIWAXS) was employed to gain further insight into microstructure of the IND films (Fig. 3). All films exhibit a strong in-plane scattering feature Qz ∼0.29 Å−1, with a weaker Debye–Scherrer ring at this lengthscale. This is consistent with the IND films forming a lamella packed structure with a pronounced in-plane orientation.25 For the IND series the introduction of asymmetry results in an increase in the magnitude of this scattering feature, indicative of greater film crystallinity. In addition to the lamella scattering feature at higher Q ∼ 0.68 Å−1 additional sharp crystalline peaks are observed, most likely arising due to the crystallization of the alkyl side chains of the IND. The scattering data show that the introduction of IND asymmetry results in greater thin-film crystallinity and a slight reduction in the lamella spacing from 22.7 Å (S-INDT) to 21.3 (AH-INDT).
The observed differences in solid-state behaviour could have a profound impact on IND singlet fission rate. Singlet fission is highly dependent on the extent of electronic coupling between monomers in the solid-state.32 Therefore, the stronger solid-state π–π interactions could increase the rate of singlet fission for the asymmetric INDs relative S-INDT. The study by Fallon et al. showed all functionalised IND small molecules that exhibited singlet fission also showed H-aggregation in the solid-state.28 As the asymmetric INDs exhibit H-aggregation whereas S-INDT exhibits J-aggregation, this further indicates desymmetrisation creates more favourable solid-state interactions for singlet fission.
Footnote |
† Electronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d1tc06054f |
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