Hongfei
Li
*ab,
Xiaoqi
Liu
a,
Chen
Lyu
a,
Feng
Ma
c,
Huanqing
Ye
a,
Peter. B.
Wyatt
d and
William P.
Gillin
a
aMaterials Research Institute and School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS, UK. E-mail: h.ye@qmul.ac.uk; w.gillin@qmul.ac.ul
bState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, P. R. China
cTianjin Key Laboratory of Organic Solar Cells and Photochemical Conversion, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China
dMaterials Research Institute and School of Biological and Chemical Sciences, Queen Mary University of London, Mile End Road, E1 4NS, UK. E-mail: p.b.wyatt@qmul.ac.uk
First published on 8th December 2020
By the sensitization effect of metallophthalocyanines showing ∼980 nm emission to an erbium complex, a remarkably long average lifetime of 1.05 ms and an optimal PLQY of 13% with a sensitization efficiency of 81 for the Er3+ 1.54 μm emission are obtained in a perfluorinated organic erbium co-doped system.
Phthalocyanines (Pcs) have highly delocalized 18 π-electron conjugated rings leading to extreme stability,24,25 bright photoluminescence (PL),26 and electroluminescence (EL) properties in the NIR region.27,28 Metallophthalocyanines (MPcs) have contributed greatly in many fields, for example, organic dye-sensitized solar cells29 and as photosensitizers in photodynamic therapy.30,31 However, no available perfluorinated matrix material that can avoid self-quenching of ErPc is known. In this article, we demonstrate enhanced 1.54 μm luminescence of Er3+ in Er(F-TPIP)3 by using M(II) hexadecafluorophthalocyanines (F16MPc; M = Zn, Pt) as sensitizers. Both these compounds possess luminescence at ∼980 nm: F16PtPc exhibits dominant phosphorescence, and the wavelength is consistent with the 980 nm excitation used for EDFA, providing high pump rate efficiency. Er(F-TPIP)3 and F16MPc are co-doped at the molecular level using a co-evaporation technique. Photoexcitation gives optimized sensitization efficiencies of 36 and 81 for the Er3+ 1.5 μm emission with F16ZnPc and F16PtPc, respectively. The average lifetimes for the Er3+ 1.5 μm emission are ∼0.89 ± 0.011 ms (doped with F16ZnPc) and ∼1.04 ± 0.012 ms (doped with F16PtPc). This is so far the longest lifetime of organic sensitized Er3+ 1.5 μm emission, which can even match those of the inorganic systems.32 A maximum photoluminescence quantum yield (PLQY) of 13% is obtained for the sensitized Er3+ 1.5 μm emission in an organic co-doped system.
Since the F16MPcs have a large coplanar conjugated system of 18 π electrons, they could form molecular aggregates and quench the luminescence, which would disfavor energy transfer from F16MPc to Er(F-TPIP)3.35 Absorption spectra provide a method to study the aggregation. As shown in Fig. 2a, the electronic absorption spectra of F16ZnPc in acetone solution and in a film deposited onto a glass substrate show two distinct absorption bands from the UV to the NIR spectral region. The high-energy absorption band in the region of <450 nm is ascribed to the B-band originating from a direct electronic transition from a2u orbital to eg orbital. The low energy absorption band in the region from 500 to 850 nm is ascribed as a Q-band originating from an a1u to eg transition. The Q band of the F16ZnPc solution in acetone shows two absorption bands at 635 and 667 nm with a shoulder at 580 nm that indicates the dimer behavior of F16ZnPc in solution.34 In comparison, it is found that the spectrum of a neat F16ZnPc film shows both significant broadening and a bathochromic shift; these are typical effects of aggregation behavior.36 However, the absorption spectrum of the Q band of F16ZnPc in a 50% Er(F-TPIP)3:50% F16ZnPc co-doped film appears as one band at 624 nm with a weak shoulder at 675 nm. Compared to that of neat F16ZnPc film, this absorption band is dramatically narrowed and its full width at half maximum (FWHM) is only slightly wider than that in solution. The comparison indicates that the aggregation of the F16ZnPc molecules in the co-doped film is effectively suppressed, and they are likely to be dispersed homogeneously.
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Fig. 2 The absorption spectra of (a) F16ZnPc and (b) F16PtPc. (A) Dissolved in acetone. (B) Neat film. (C) Co-doped film with 50% Er(F-TPIP)3. |
The Q band of F16PtPc in the solution, neat and co-doped films are similar, and the FWHM of the Q band of the 50% Er(F-TPIP)3:50% F16PtPc co-doped film is even slightly narrower than that in solution (Fig. 2b). This contrasts markedly with F16ZnPc (Fig. 2a) considered above, where the Q band of F16ZnPc in the neat film is significantly different from those in the solution and the co-doped film. Especially, F16PtPc in the co-doped film shows one Q band, which indicates that the F16PtPc molecules in the co-doped film exist homogeneously as monomers.
The emission spectra of neat F16ZnPc and F16PtPc films are shown in Fig. 3. Zn2+ has a relatively low atomic number and a d10 closed shell structure without any unpaired electrons, leading to a low probability of intersystem crossing (ISC).37 Its very weak phosphorescence possibly comes from the π → π* transition of the F16Pc ligands. Because no long-lived emission is detected at room temperature, we can attribute the luminescence of F16ZnPc at about 980 nm to fluorescence. On the other hand, non-fluorinated PtPc exhibits phosphorescence in the NIR region, and the perfluorination of PtPc can further increase the ISC, so F16PtPc is regarded as a phosphorescent material.38–40
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Fig. 3 Absorption spectrum of 4I15/2 → 4I11/2 of Er3+ ion in an Er(F-TPIP)3 crystal; emission spectra of neat F16ZnPc and F16PtPc films. |
To gain insight into the origin of the intense emission peak at ca. 980 nm of the neat F16PtPc film, we have performed SOC-TDDFT calculations based on the T1 excited state structure. The calculated emission energies in terms of wavelength and dominant orbital transitions for the low-lying triplet excited states are collected in Table 1, and the important frontier molecular orbitals are shown in Fig. 4. The calculated emission wavelength in the Franck–Condon state (T1 equilibrium geometry) for F16PtPc is 940 nm, which relates well to the experimental phosphorescence peak of 980 nm. As shown in Table 1, the lowest energy transitions for these emission bands are LUMO → HOMO transitions. From Fig. 4, the LUMO (61e1/2g) is largely a π orbital of F16Pc mixed with the dπ of Pt, and the HOMO (61e1/2u) is largely a π* orbital on the F16Pc. We attribute the origin of the 980 nm emission in the experiment to mixed metal-to-ligand charge transfer (3MLCT) and ligand-centered (3LC) characteristics. The calculated long excited-state lifetime of 544.7 μs confirms that F16PtPc emits phosphorescence.
State | ΔE [eV] | λ [nm] | f | Transition contribution | Assignment | T [s] |
---|---|---|---|---|---|---|
3A1u | 1.3173 | 941.3 | 0.000 | 61e1/2g → 61e1/2u (0.9986) | 3LC/3MLCT | — |
3A2u | 1.3173 | 941.3 | 0.2438 × 10−7 | 61e1/2g → 61e1/2u (0.9986) | 3LC/3MLCT | 0.5447 |
3Eu | 1.3346 | 929.1 | 0.1015 × 10−3 | 61e1/2g → 61e1/2u (0.5199) | 3LC/3MLCT | 1.275 × 10−4 |
3Eu | 1.3346 | 929.1 | 0.1015 × 10−3 | 58e3/2g → 61e1/2u (0.4789) | 3LC/3MLCT | 1.275 × 10−4 |
3B1u | 1.3519 | 917.2 | 0.000 | 61e1/2g → 61e1/2u (0.9987) | 3LC/3MLCT | — |
3B2u | 1.3519 | 917.2 | 0.000 | 58e3/2g → 61e1/2u (0.9987) | 3LC/3MLCT | — |
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Fig. 4 Calculated electronic density contours of the frontier molecular orbitals involved in the main electronic transitions. |
The absorption spectrum of the Er3+ ion in the Er(F-TPIP)3 crystal in the NIR region is shown in Fig. 3. Both the broad emission bands of F16ZnPc and especially F16PtPc have good overlap of the absorption band of 4I15/2 → 4I11/2 of the Er3+ ion in Er(F-TPIP)3, which means that an efficient sensitization may be realized through energy transfer from F16MPc to Er(F-TPIP)3.
In order to study the sensitization effect of F16ZnPc on Er(F-TPIP)3, a series of Er(F-TPIP)3:F16ZnPc co-doped films with the concentrations of Er(F-TPIP)3 varying from 20% to 80% were prepared; their emission spectra are shown in Fig. 5a. It is found that the emission intensity of F16ZnPc at ∼980 nm tends to decrease with increasing Er(F-TPIP)3 concentration, implying that energy is transferred to Er(F-TPIP)3 quenching the excitation of F16ZnPc. The emission spectra of the Er(F-TPIP)3:F16PtPc co-doped films under the excitation of a 655 nm laser are shown in Fig. 5b. It is found that the centre of the emission spectrum is shifted from 970 nm in the neat F16PtPc film to ∼980 nm in the co-doped film. Being different from the Er(F-TPIP)3:F16ZnPc co-doped films, the dips in the mixed 3LC/3MLCT emission spectra of F16PtPc in co-doped films appeared at ∼980 nm, which was not found in the spectrum of the neat F16PtPc film as shown in Fig. 3. Their shapes resemble those of the inverted absorption bands of Er(F-TPIP)3 at ∼980 nm, as shown in Fig. 5b. This is a clear evidence that there is an energy transfer mechanism based on the emission–reabsorption process where the Er3+ 4I11/2 state absorbs part of the F16PtPc emission.41,42 This mechanism is different from the Förster energy transfer, wherein the whole emission intensity of F16PtPc should be decreased with no change in spectral features.
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Fig. 5 Emission spectra of (a) Er(F-TPIP)3:F16ZnPc and (b) Er(F-TPIP)3:F16PtPc co-doped films with different Er(F-TPIP)3 concentrations. λex = 655 nm. |
It is interesting that there is no dip in the emission spectrum of F16PtPc in the 20% Er(F-TPIP)3:80% F16PtPc co-doped film. This means that the re-absorption process does not occur at this concentration, and there may be another energy transfer path from F16PtPc to Er(F-TPIP)3. Förster transfer is a resonant dipole coupling process that is dependent on the overlap between the donor emission spectrum and the acceptor absorption spectrum. Here the overlap between the PL spectrum of F16PtPc and the absorption of Er(F-TPIP)3 is obvious, as shown in Fig. 3. It indicates that the Förster energy transfer may also be an efficient mechanism and suggests that the energy transfer process from F16PtPc to Er(F-TPIP)3 comprises Förster transfer and emission–reabsorption. The energy transfer paths are shown in Fig. 6. The 20% Er(F-TPIP)3:80% F16PtPc co-doped film shows the weakest 1.54 μm emission from Er(F-TPIP)3 due to the low concentration of Er(F-TPIP)3. Meanwhile, given the weak emission from F16PtPc, there could be a triplet–triplet annihilation (TTA) due to highly concentrated 80% F16PtPc, which reduces the energy transfer. As the concentration of Er(F-TPIP)3 is increased, the 1.54 μm emission of Er(F-TPIP)3 increases gradually while the emission of F16PtPc decreases. The strongest 1.54 μm emission is obtained based on 80% Er(F-TPIP)3 doped concentration, due to the increase in the Er(F-TPIP)3 molecules and possibly a decrease in the TTA effect in F16PtPc.
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Fig. 6 Schematic energy diagram describing the two sensitization mechanisms of NIR luminescence of Er(F-TPIP)3via F16PtPc energy transfer (path I) and emission–reabsorption (path II). |
To quantify the sensitization efficiency, the Er(F-TPIP)3:Y(F-TPIP)3 co-doped films with different diluted Er3+ concentrations were used as reference samples, where Y3+ is optically inactive, resulting in the exclusion of energy transfer from Y(F-TPIP)3 to Er(F-TPIP)3. The measurement set up is identical for all co-doped films. The power-dependent Er3+ PL intensities of these co-doped films with Er3+ concentrations of 20%, 40%, 60%, and 80% recorded at 1532 nm are shown in Fig. 7, where the Er3+ ions are directly excited to the 4F9/2 level. In the co-doped films containing the sensitizers, 655 nm photoexcitation of F16ZnPc and F16PtPc was again used to induce sensitization. Hence, the 1532 nm emission intensities from both the F16ZnPc and F16PtPc co-doped films are larger than those of the Y(F-TPIP)3 doped films. The sensitization effect can be simply calculated by fitting the emission intensity of the Y(F-TPIP)3 doped films versus power density, which shows a linear correlation. Subsequently, the power densities used in F16MPc can be used in the correlation to calculate the corresponding 1532 nm emission intensity, and these values can be used to divide the measured 1532 nm intensity to get the sensitization efficiency. The values of the sensitization efficiency for F16ZnPc/F16PtPc in different Er(F-TPIP)3 doped films are listed in Table 2. The sensitization efficiency decreased with the increased percentage of Er(F-TPIP)3 in the F16ZnPc doped films. F16PtPc behaves differently, the reason being that the TTA effect of F16PtPc is quite strong. However, under a high concentration of Er(F-TPIP)3, the F16PtPc molecules get separated and the TTA effect is dramatically decreased, and the emission from F16PtPc gets stronger so that more energy can be transferred to the Er3+ ions through the re-absorption effect. In addition, long-lived triplet excitons of F16PtPc travel over a long distance to sensitize Er3+ ions, along with the perfect overlap between the absorption band of Er(F-TPIP)3 and the emission peak of F16PtPc. So, F16PtPc shows a more efficient sensitization effect than F16ZnPc with high Er(F-TPIP)3 doped concentration.
Sample | Concentration [%] | Sensitization efficiency |
---|---|---|
Er(F-TPIP)3:F16ZnPc | 20 | 36 ± 1.6 |
Er(F-TPIP)3:F16ZnPc | 40 | 32 ± 1.3 |
Er(F-TPIP)3:F16ZnPc | 60 | 30 ± 1.2 |
Er(F-TPIP)3:F16ZnPc | 80 | 28 ± 1.2 |
Er(F-TPIP)3:F16PtPc | 20 | 22 ± 1.1 |
Er(F-TPIP)3:F16PtPc | 40 | 53 ± 2.3 |
Er(F-TPIP)3:F16PtPc | 60 | 70 ± 3.2 |
Er(F-TPIP)3:F16PtPc | 80 | 81 ± 3.9 |
The time-resolved PL (TRPL) decay curves for the F16PtPc emission recorded at 980 nm with different Er(F-TPIP)3 doped concentration films are shown in Fig. 8a. The values of their short component (τS), long component (τL), and average lifetimes (τAve) are listed in Table 3a. The lifetime of the F16ZnPc is too short to be measured, lying below the detection limit of the equipment (∼5 ns) due to the strong self-quenching. In F16PtPc doped films, the changing concentrations affect the τL of F16PtPc through two opposing processes: (I) with increased Er(F-TPIP)3 concentrations, F16PtPc is diluted, and the reduced TTA effect leads to increased τL. (II) At the same time, each F16PtPc molecule is surrounded by more Er(F-TPIP)3 molecules; their excitons can more easily transfer their energy to the central Er3+ ions in Er(F-TPIP)3, thus tending to reduce τL. As the Er(F-TPIP)3 concentration increases from 20% to 60%, τL gradually increases from 1.00 ± 0.015 ms to 1.89 ± 0.017 ms because factor (I) plays the dominant role. However, in the 80% Er(F-TPIP)3 doped film, τL decreases to 1.30 ± 0.014 ms as factor (II) is predominant. Basically, the energy transfer from F16PtPc to Er(F-TPIP)3 is more efficient with an increase in Er(F-TPIP)3 because more energy is transferred to Er(F-TPIP)3, which causes the lifetime of F16PtPc to decrease from 484.64 ± 7.09 μs to 384.48 ± 6.39 when the Er(F-TPIP)3 concentration is increased from 20% to 80%.
(a) | |||
---|---|---|---|
Concentration [%] | τ S [μs] | τ L [ms] | τ Ave [μs] |
20 | 43.50 ± 0.047 (64%) | 1.30 ± 0.014 (36%) | 484.64 ± 7.09 |
40 | 45.75 ± 0.039 (61%) | 1.89 ± 0.017 (39%) | 754.29 ± 7.00 |
60 | 43.44 ± 0.068 (52%) | 1.45 ± 0.010 (48%) | 708.62 ± 8.56 |
80 | 44.89 ± 0.076 (64%) | 1.00 ± 0.015 (36%) | 384.48 ± 6.39 |
(b) | |||
---|---|---|---|
F16ZnPc concentrations [%] | Short component τS [ms] | Long component τL [ms] | Average lifetime τAve [ms] |
80 | 0.67 ± 0.0025 (49%) | 1.08 ± 0.0047 (51%) | 0.88 ± 0.015 |
60 | 0.68 ± 0.0013 (62%) | 1.22 ± 0.0048 (38%) | 0.89 ± 0.003 |
40 | 0.76 ± 0.0009 (81%) | 1.45 ± 0.0116 (19%) | 0.89 ± 0.014 |
20 | 0.77 ± 0.0006 (86%) | 1.72 ± 0.0213 (14%) | 0.91 ± 0.015 |
(c) | |||
---|---|---|---|
Er(F-TPIP)3 concentrations [%] | Short component τS [ms] | Long component τL [ms] | Average lifetime τAve [ms] |
20 | 0.85 ± 0.0025 (48%) | 1.22 ± 0.0012 (52%) | 1.04 ± 0.025 |
40 | 0.90 ± 0.0013 (65%) | 1.30 ± 0.0014 (35%) | 1.04 ± 0.034 |
60 | 0.95 ± 0.0009 (82%) | 1.50 ± 0.0016 (18%) | 1.05 ± 0.041 |
80 | 0.98 ± 0.0006 (91%) | 1.46 ± 0.0010 (9%) | 1.02 ± 0.047 |
The results of TRPL measurements for the Er3+ emission lifetimes (λmon = 1532 nm) with different concentrations of Er(F-TPIP)3 films doped with F16ZnPc and F16PtPc are shown in Fig. 8b, c and Table 3b and c, respectively. The decay can be described by a biexponential process, with two lifetime components for Er3+ in each co-doped film. Being sensitized by F16ZnPc and F16PtPc, the rise in the Er(F-TPIP)3 concentrations makes their τS and τL to increase, which shows the same trend of the emission intensity of Er(F-TPIP)3 as shown in Fig. 5, except for the 80% Er(F-TPIP)3:F16PtPc co-doped film. Compared to the 60% Er(F-TPIP)3 doped film, the τL of the 80% Er(F-TPIP)3 doped film is slightly decreased. With the increase in Er(F-TPIP)3 doped concentration, although their τS and τL are increased, the erbium ion–ion interaction is also increased. This leads the percentage contribution of τL to be reduced, while τS is increased, which makes τAve almost unaffected by the doped concentrations of sensitizers. τS and τAve of Er3+ in the F16PtPc co-doped films are longer than those of the F16ZnPc co-doped films because of the long phosphorescence lifetimes of F16PtPc and the emission–reabsorption process from F16PtPc to Er(F-TPIP)3 in doped films. The longest average lifetime of 0.91 ± 0.015 and 1.05 ± 0.041 ms for F16ZnPc and F16PtPc co-doped films are obtained, and they are 4.55 and 5.25 times longer than the neat Er(F-TPIP)3 film (0.2 ms), respectively. This prolonged Er3+ lifetime is caused by the long-lived organic triplet excitons;43 so the largest PLQY of 13% is achieved in the F16PtPc co-doped film, which is the highest ever reported for erbium in an organic complex.
kr = 2ε2f/c3 |
Footnote |
† Electronic supplementary information (ESI) available. See DOI: 10.1039/d0tc05301e |
This journal is © The Royal Society of Chemistry 2021 |