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DOI: 10.1039/C8NR90273A (Correction) Nanoscale, 2019, 11, 365-365

Correction: Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition

Sushil Kumar Pandey a, Hussain Alsalman ab, Javad G. Azadani a, Nezhueyotl Izquierdo a, Tony Low a and Stephen A. Campbell *a
aDepartment of Electrical and Computer Engineering, University of Minnesota, 200 Union Street, Minneapolis, Minnesota 55455, USA. E-mail: campb001@umn.edu
bNational Nanotechnology Center, King Abdulaziz City for Science and Technology (KACST), Riyadh 6086-11442, Kingdom of Saudi Arabia

Received 4th December 2018 , Accepted 4th December 2018

First published on 11th December 2018

Abstract

Correction for ‘Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition’ by Stephen A. Campbell et al., Nanoscale, 2018, 10, 21374–21385.

The authors have noticed that affiliation b for Hussain Alsalman was missing in the original article. A corrected affiliation list has therefore been provided for this correction.

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

This journal is © The Royal Society of Chemistry 2019