Open Access Article
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Correction: Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions
Shiqi
Liu
a,
Jingzhen
Li
a,
Bowen
Shi
a,
Xiuying
Zhang
a,
Yuanyuan
Pan
a,
Meng
Ye
a,
Ruge
Quhe
b,
Yangyang
Wang
ac,
Han
Zhang
a,
Jiahuan
Yan
a,
Linqiang
Xu
a,
Ying
Guo
d,
Feng
Pan
*e and
Jing
Lu
*af
aState Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China. E-mail: jinglu@pku.edu.cn
bState Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China
cNanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, P. R. China
dSchool of Physics and Telecommunication Engineering, Shaanxi Sci-Tech University, Hanzhong 723001, P. R. China
eSchool of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen 518055, P. R. China. E-mail: panfeng@pkusz.edu.cn
fCollaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China
First published on 28th June 2018
Abstract
Correction for ‘Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions’ by Shiqi Liu et al., J. Mater. Chem. C, 2018, DOI: 10.1039/c8tc01106k.
The authors regret that an incorrect description was used in the computational details section. The sentence “A periodic type, a Neumann type and a Dirichlet type boundary condition are used in the x, y and z directions of the device (Fig. 4), respectively.” should read “A Neumann type, a Periodic type and a Dirichlet type boundary condition are used in the x, y and z directions of the device (Fig. 4), respectively.”
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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