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Correction: Efficient carrier transport in halide perovskites: theoretical perspectives

M. H. Du *
Materials Science & Technology Division, Oak Ridge, TN 37831, USA. E-mail: mhdu@ornl.gov

Received 29th June 2018 , Accepted 29th June 2018

First published on 6th July 2018


Correction for ‘Efficient carrier transport in halide perovskites: theoretical perspectives’ by M. H. Du et al., J. Mater. Chem. A, 2014, 2, 9091–9098.


The author wishes to point out that in the abstract of the published article, there is an error in the following sentence: “Defect calculations show that, among native point defects (including vacancies, interstitials, and antisites), only iodine vacancy is a low-energy deep trap and non-radiative recombination centre.”

The corrected sentence should read: “Defect calculations show that, among native point defects (including vacancies, interstitials, and antisites), only iodine interstitial is a low-energy deep trap and non-radiative recombination centre.”

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.


This journal is © The Royal Society of Chemistry 2018