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Correction: Defect chemistry and enhancement of thermoelectric performance in Ag-doped Sn1+δ−xAgxTe
Min Ho
Lee
ac,
Do-Gyun
Byeon
a,
Jong-Soo
Rhyee
*ab and
Byungki
Ryu
*c
aDepartment of Applied Physics, Institute of Natural Sciences, Kyung Hee University, Yongin 17104, Korea. E-mail: jsrhyee@khu.ac.kr; Fax: +82-31-204-8122; Tel: +82-31-201-2415
bKHU-KIST Department of Converging Science and Technology, Kyung Hee University, Seoul 02447, Korea
cThermoelectric Conversion Research Center, Korea Electrotechnology Research Institute, Changwon 51543, Korea. E-mail: byungkiryu@keri.re.kr; Fax: +82-55-280-1590; Tel: +82-55-280-1657
First published on 16th February 2018
Abstract
Correction for ‘Defect chemistry and enhancement of thermoelectric performance in Ag-doped Sn1+δ−xAgxTe’ by Min Ho Lee et al., J. Mater. Chem. A, 2017, 5, 2235–2242.
The authors regret an error in Fig. 4 of the original manuscript. The correct version of Fig. 4 is as below.
 | ||
| Fig. 4 Electronic band structures of SnTe supercells with defects: Sn-vacancy (VSn) (a), Ag-substitution at the Sn-site (AgSn) (b), Ag–dimer complex defect (Ag–Ag)Sn (c), and Ag complex defect (AgSn–AgTe–AgSn)orthogonal (d). Valence band maximum energy is set to zero and the Fermi level is denoted by a green line. | ||
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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