David
Edwards
a,
Niall
Browne
a,
Kristina M.
Holsgrove
a,
Aaron B.
Naden
a,
Sayed O.
Sayedaghaee
b,
Bin
Xu
c,
Sergey
Prosandeev
c,
Dawei
Wang
d,
Dipanjan
Mazumdar
e,
Martial
Duchamp
fg,
Arunava
Gupta
h,
Sergei V.
Kalinin
i,
Miryam
Arredondo
a,
Raymond G. P.
McQuaid
a,
Laurent
Bellaiche
c,
J. Marty
Gregg
a and
Amit
Kumar
*a
aSchool of Mathematics and Physics, Queen's University Belfast, Belfast, BT7 1NN, UK. E-mail: a.kumar@qub.ac.uk
bMicroelectronics-Photonics Program and Physics Department, University of Arkansas, Fayetteville, Arkansas 72701, USA
cPhysics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
dElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China
eDepartment of Physics, Southern Illinois University, Carbondale, Illinois 62901, USA
fErnst Ruska Centre for Microscopy, Forschungszentrum Juelich, Juelich 52428, Germany
gSchool of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
hCenter for Materials for Information Technology, University of Alabama, Tuscaloosa, Alabama 35487, USA
iCenter for Nanophase Material Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
First published on 11th October 2018
Correction for ‘Giant resistive switching in mixed phase BiFeO3via phase population control’ by David Edwards et al., Nanoscale, 2018, 10, 17629–17637.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
This journal is © The Royal Society of Chemistry 2018 |