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Correction: A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy
Marc Courtéa,
Sandeep G. Suryab,
Ramesh Thamankarc,
Chao Shena,
V. Ramgopal Raob,
Subodh G. Mhaisalkarde and
Denis Fichou*afg
aSchool of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore. E-mail: denisfichou@ntu.edu.sg
bDepartment of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400 076, India
cSchool of Engineering and Technology, CMR University, Bangalore 560043, India
dSchool of Material Science and Engineering, Nanyang Technological University, 639798, Singapore
eEnergy Research Institute@NTU (ERI@N), Nanyang Technological University, 637141, Singapore
fCNRS, UMR 8232, Institut Parisien de Chimie Moléculaire, F-75005, Paris, France
gSorbonne Universités, UPMC Univ Paris 06, UMR 8232, Institut Parisien de Chimie Moléculaire, F-75005, Paris, France
First published on 2nd February 2017
Abstract
Correction for ‘A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy’ by Marc Courté et al., RSC Adv., 2017, 7, 3336–3342.
The authors regret that the name of the sixth author was presented incorrectly in the original article. Subodh G. Mhaisalkar’s name has been corrected herein.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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