Open Access Article
Yuanrong Cheng
*,
Wenhao Chen,
Zhuo Li,
Tangwei Zhu,
Ziyu Zhang and
Yunxia Jin
Department of Materials Science, Fudan University, 220 Handan Road, Shanghai 200433, People's Republic of China. E-mail: chengyr@fudan.edu.cn
First published on 3rd March 2017
The development of microelectronics requires high performance interlevel dielectric materials with an extremely low dielectric constant and loss factor. Benzocyclobutene (BCB)-based materials have attracted significant attention because of their low-dielectric constant, low loss factor, and excellent high-temperature performance. The Dow chemical company has developed a series of BCB photoresists for interlevel dielectrics based on 1,3-bis[2-(1,2-dihyd-benzocyclobutene-4-yl)vinyl]-1,1,3,3-tetramethyldisiloxane (DVS-BCB). However, the introduction of a BCB group to prepare BCB resins requires expensive noble metal catalysts such as Pd salts for the Heck reaction or Suzuki reaction. Herein, a simple but novel synthetic route for the hydrolysis and condensation of BCB-functionalized chlorosilane (BCS) to obtain 1,3-bis(1,2-dihydro-benzocyclobutene-4-yl)-1,3-dimethyl-1,3-divinyldisiloxane (DBDVS) was developed. Similarly, BCB-functionalized chlorosilane as the BCB precursor can also react with silanols or alcohols such as 1,3-adamantanediol to afford 1,3-bis[(1,2-dihydro-benzocyclobutene-4-yl)methylvinylsilyloxy]adamantane (AdaDBDVS), which provides a method for the BCB functionalization of hydroxyl-containing organic or inorganic surfaces. The cured DBDVS and AdaDBDVS exhibit high glass transition temperatures above 380 °C and good thermal stability (T5% > 440 °C). Moreover, the crosslinking density of the cured DBDVS and AdaDBDVS is higher than that of the cured DVS-BCB. Thus, the cured DBDVS and AdaDBDVS exhibit better thermal mechanical properties such as higher modulus and higher glass transition temperature. In addition, the cured DBDVS exhibits a low CTE of 47.8 ppm per °C from 30 to 275 °C as well as an extremely low dissipation factor of 0.00045 at 1 MHz, which is lower than that of cured DVS-BCB.
The BCB group is usually introduced into organic molecules via noble metal salts, such as Pd salt, catalyzed reactions such as Heck reaction or Suzuki reaction.17,18 For example, the Dow Chemical Company has developed 1,3-bis(2-(1,2-dihydro-benzocyclobutene-4-yl)vinyl)-1,1,3,3-tetramethyldisiloxane (DVS-BCB) via the Heck reaction of 4-bromobenzocyclobutene (4-Br-BCB) with DVS. Our group has also reported a series of BCB resins obtained by Heck reaction or Suzuki reaction.15,19 However, the use of noble metal salts such as Pd salts increases the cost of BCB resins. Herein, we report a simple but novel synthetic route that avoids the use of expensive noble metal catalysts. Monomeric 1,3-bis(1,2-dihydro-benzocyclobutene-4-yl)-1,3-dimethyl-1,3-divinyldisiloxane (DBDVS) was prepared via the hydrolysis and condensation of BCB-functionalized chlorosilane as the BCB precursor. Similarly, 1,3-bis[(1,2-dihydro-benzocyclobutene-4-yl)methylvinylsilyloxy]adamantane (AdaDBDVS) was also prepared by BCB-functionalized chlorosilane as the BCB precursor by reaction with 1,3-adamantanediol. Both DBDVS and AdaDBDVS can be cured at appropriate temperatures. Compared to the cured DVS-BCB, the cured DBDVS exhibits a higher crosslinking density and therefore better thermal mechanical properties and an extremely low dissipation factor.
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1) to afford DBDVS (transparent liquid, 86%). 1H-NMR (CDCl3, 500 MHz, δ/ppm): 7.44–7.47 (d, 1H), 7.29 (s, 1H), 7.08–7.11 (d, 1H), 6.25–6.33 (dd, 1H), 6.05–6.11 (dd, 1H), 5.81–5.87 (dd, 1H), 3.22 (CH2–CH2, s, 4H), 0.45 (CH3, s, 3H). 13C NMR (CDCl3, 125 MHz, δ/ppm): 147.6, 145.5, 137.9, 136.0, 133.5, 132.0, 127.4, 121.8, 29.8, −0.70.For preparing the polymeric coatings for the AFM test, the monomer (1.0 g) was dissolved in mesitylene (3.0 g) and refluxed for 30 h to afford the oligomers. Then, the oligomer was spin-coated onto the silicon wafer and cured at 250 °C for about 3 h and at 280 °C for 0.5 h under a N2 atmosphere.
Fig. 1 shows the 1H NMR spectra of DBDVS and AdaDBDVS. In DBDVS, the protons (H1) of the methyl group attached to silicon and the methylene protons (H6) of the four-membered ring of the BCB group are observed at 0.45 and 3.22 ppm, respectively. The protons of the vinyl group attached to silicon show three groups of peaks at 5.81–5.87 ppm, 6.05–6.11 ppm, and 6.25–6.33 ppm. The peaks at 7.10, 7.29, and 7.46 ppm are attributed to the protons of the benzene ring of BCB. AdaDBDVS shows a 1H NMR spectrum similar to that of DBDVS, with the difference that the spectrum of AdaDBDVS shows the peaks for the adamantane protons between 1.3 ppm and 2.4 ppm.
Fig. 2 shows the 13C NMR spectra of DBDVS and AdaDBDVS, with all carbon atoms in DBDVS and AdaDBDVS clearly assigned. Among these, the peaks at 29.9 and 29.8 ppm are assigned to the methylene carbons of the four-membered ring of BCB group for both DBDVS and AdaDBDVS. The methyl carbons attached to silicon show peaks at −0.7 and −0.25 ppm for DBDVS and AdaDBDVS, respectively. Overall, 1H and 13C NMR spectra of DBDVS and AdaDBDVS demonstrate that all the protons and carbons are consistent with the structure of DBDVS and AdaDBDVS.
The FTIR spectra of DBDVS and AdaDBDVS are shown in Fig. 3. For DBDVS, the bands at 2962 cm−1 and 2929 cm−1 are ascribed to the C–H stretching vibration of –CH3. The band at 2828 cm−1 is due to the C–H stretching vibration of methylene in the four-membered ring of BCB. The band at 1593 cm−1 is due to the C
C stretching vibration of the vinyl group.20 Furthermore, the band at 1464 cm−1 is due to the in-plane deformation vibration of the C–H of the methylene in the strained four-membered ring of BCB, and the bands at 1404 cm−1 and 1256 cm−1 are due to the δas(C–H) and δs(C–H) of Si–CH3, respectively. The strong band at 1051 cm−1 is assigned to the Si–O–Si stretching vibration. The absorption band at 789 cm−1 is due to the stretching vibration of Si–C. The bands at 1009 cm−1 and 956 cm−1 are assigned to the bending vibration of C–H in CH2
CH. The AdaDBDVS monomer shows an FTIR spectrum similar to that of DBDVS. The difference is the presence of strong bands at 1072 cm−1 and 1051 cm−1, which are assigned to Si–O–C, and some other bands assigned to C–C, CH2 and CH vibrations.
The FTIR spectra of the cured resins was compared with the FTIR spectra of their corresponding monomers, as it can be seen in Fig. 5. After curing, the bands at 2828 and 1464 cm−1 for BCB and the bands at 1593, 1009, and 956 cm−1 for the vinyl groups completely disappeared, which indicates that the main curing mechanism for the BCB-based monomers is the Diels–Alder cyclization between the reactive o-quinodimethane moieties and alkene groups.19 Moreover, new bands at 3030, 1597, 1557, and 1490 cm−1 of benzene ring appear in the final resins. In summary, these results indicated that the final resins had been completely cured.
Fig. 7 shows the DMA curves of the cured BCB resins compared with those of DVS-BCB. The initial storage modulus of cured DVS-BCB is 2.3 GPa at 50 °C. The storage modulus decreases to 0.9 GPa at 250 °C. The damping factor (δ) gradually increases and peaks to 0.09 at about 300 °C. This may be ascribed to the movement of Si–O–Si segment in the cross-linked network. On the other hand, our prepared DBDVS exhibits a higher storage modulus of 2.8 GPa at 50 °C. Even when the temperature reaches 380 °C, the cured DBDVS still exhibits a high storage modulus of 1.6 GPa. Moreover, the damping factor is lower than 0.03 from 50 to 380 °C, and no peak is observed. This indicates that the cured DBDVS shows excellent stiffness within a wide range of temperatures, and no glass transition appears below 380 °C, which is superior to the cured DVS-BCB. Furthermore, the cured AdaDBDVS shows a storage modulus of 2.7 GPa at 50 °C, 1.2 GPa at 300 °C, and 0.5 GPa at 380 °C. The damping factor of AdaDBDVS is lower than that of DVS-BCB but higher than that of DBDVS. Compared with DBDVS, the introduction of a rigid adamantane group in the main chain increases the distance of the cross-linking point, which decreases the cross-linking density and leads to a decreased stiffness.
To better understand the properties and structures, the cured structures of DVS-BCB and DBDVS were drawn and are shown in Scheme 2. For cured DVS-BCB, every silicon atom is bridged by two chains. However, in the structure of DBDVS, every silicon atom is bridged by three chains. This means that cured DBDVS possesses a higher cross-linking density than DVS-BCB, which makes DBDVS show higher stiffness and a higher glass transition temperature.
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| Scheme 2 Curing mechanism and simplified chemical structures of cured DBDVS and DVS-BCB (the dipole moment was obtained by GAMESS simulation). | ||
Fig. 8 shows the TMA curves of the cured polymers (left) and the change in the CTE versus temperature (right). The CTE values of the polymers from 30 to 275 °C and above 350 °C are listed in Table 1. From 30 to 275 °C, DBDVS shows the smallest CTE of 47.8 ppm per °C, which is lower than that of DVS-BCB (60.6 ppm per °C). According to the curves of the change of CTE versus temperature (right), both DVS-BCB and DBDVS show low CTE less than 50 ppm per °C below 150 °C. However, the CTE of DVS-BCB swiftly increases above 150 °C and reaches 70–80 ppm per °C. Below 250 °C, DBDVS shows steady and small CTE below 50 ppm per °C. The lower CTE of DBDVS indicates that DBDVS has better thermal mechanical properties and dimensional stability.
| Cured resins | E′a (MPa) | Tgb (°C) | T5 wt%c (°C) | CTEd (ppm per °C) | Ke | Df (10−3) | Rag (nm) | |
|---|---|---|---|---|---|---|---|---|
| 50 °C | 300 °C | |||||||
| a Storage modulus.b Glass transition temperature.c 5% weight loss temperature.d Coefficient of thermal expansion between 30 and 275 °C.e Dielectric constant (K) at 1 MHz.f Dielectric loss (D) at 1 MHz.g Average surface roughness in an area of 1.0 × 1.0 μm2. | ||||||||
| DVS-BCB | 2280 | 490 | 293 | 446 | 60.6 | 2.65 | 2.80 | |
| DBDVS | 2845 | 2120 | >380 | 453 | 47.8 | 2.72 | 0.45 | 0.374 |
| AdaDBDVS | 2730 | 1720 | >380 | 449 | 64.2 | 2.78 | 0.81 | 0.364 |
Fig. 9 shows the dielectric property of the bulk polymers. The dielectric constant of all the polymers remained almost unchanged over the frequency range from 100 kHz to 1.2 MHz. The dielectric constant of the cured DBDVS is 2.72 at 1 MHz, which is slightly higher than that of the cured DVS-BCB (2.64 at 1 MHz). According to the Debye equation, the dielectric constant of the materials is mainly dependent on the dipole moment in the polymer materials. To understand the relationship between structure and dielectric properties, a GAMESS simulation analysis of the model structure of the cured resins (shown in Scheme 2) was performed. The result shows that the simplified model structure of cured DVS-BCB has a dipole moment of 0.361 Debye. On the other hand, the dipole moment of the simplified model of the cured DBDVS, in which thbenzene ring is directly attached to a silicon atom, is 0.778 Debye. Along with the silicon atom with four different replacement groups, the dipole moment of cured DBDVS with a lower symmetry, may be higher than that of cured DVS-BCB. Thus, DBDVS shows a larger dielectric constant. Compared with cured DBDVS, cured AdaDBDVS has a similar chemical structure with an additional adamantane–oxygen group in the main chain. According to the test result, the introduction of adamantane in the structure by this method does not lead to a decrease in the dielectric constant.
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| Fig. 9 Frequency dependency of the dielectric constant and dielectric loss of the polymers at room temperature. | ||
Furthermore, the cured DBDVS shows extremely low dissipation factor of 0.00045 at 1 MHz, which is lower than that of cured DVS-BCB (0.0028 at 1 MHz). This may be due to the fact that the cross-linking density of DBDVS is higher than that of DVS-BCB, which restricts the movement of the electric dipole in Si–O–Si. The cured DBDVS with an extremely low dielectric loss may be an ideal alternative candidate for interlayer dielectric materials.
The surface uniformity and planarity of the polymer coatings on a silicon wafer was investigated by AFM. Both planar graphs and stereograms are shown in Fig. 10. Measurement results show that the average surface roughness Ra of the cured DBDVS and AdaDBDVS is 0.374 nm and 0.364 nm in a 1.0 × 1.0 μm2 area, respectively. The excellent uniformity and planarity of the polymeric coatings is desirable for the processing of low-K interlayers.
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| Fig. 10 AFM images of polymeric coatings on a silicon wafer: p-DBDVS (up) and p-AdaDBDVS (bottom); (left) planar graph, (right) stereogram. | ||
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