Issue 40, 2016

High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

Abstract

Although there are a few research studies on solution-processed p-channel oxide thin-film transistors (TFTs), the strict fabrication conditions and the poor electrical properties have limited their applications in low-power complementary metal oxide semiconductor (CMOS) electronics. Here, the application of the polyol reduction method for processing p-type CuxO and NiOx channel layers and their implementation in TFT devices are reported. The optimized CuxO and NiOx TFTs were achieved at low annealing temperatures (∼300 °C) and exhibited decent electrical properties. Encouraged by the inspiring results obtained on SiO2/Si substrates, the TFT performance was further optimized by device engineering, employing high-k AlOx as the gate dielectric. The fully solution-processed NiOx/AlOx TFT could be operated at a low voltage of 3.5 V and exhibits a high hole mobility of around 25 cm2 V−1 s−1. Our work demonstrates the ability to grow high-quality p-type oxide films and devices via the polyol reduction method over large area substrates while at the same time it provides guidelines for further p-type oxide material and device improvements.

Graphical abstract: High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

Supplementary files

Article information

Article type
Paper
Submitted
24 May 2016
Accepted
05 Sep 2016
First published
06 Sep 2016

J. Mater. Chem. C, 2016,4, 9438-9444

High-mobility p-type NiOx thin-film transistors processed at low temperatures with Al2O3 high-k dielectric

F. Shan, A. Liu, H. Zhu, W. Kong, J. Liu, B. Shin, E. Fortunato, R. Martins and G. Liu, J. Mater. Chem. C, 2016, 4, 9438 DOI: 10.1039/C6TC02137A

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