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Correction: Semiconducting quaternary chalcogenide glasses as new potential thermoelectric materials: an As–Ge–Se–Sb case

A. Dahshan ab, Pankaj Sharma *c and K. A. Aly de
aDepartment of Physics, Faculty of Science, Port Said University, Port Said, Egypt
bDepartment of Physics, Faculty of Science for Girls, King Khalid University, Abha, Saudi Arabia
cDepartment of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173234, India. E-mail: pks_phy@yahoo.co.in
dDepartment of Physics, Faculty of Science and Arts, Jeddah University, Jeddah, Saudi Arabia
eDepartment of Physics, Faculty of Science, Al-Azhar University, Assiut Branch, Assiut, Egypt

Received 17th December 2015 , Accepted 17th December 2015

First published on 20th January 2016


Abstract

Correction for ‘Semiconducting quaternary chalcogenide glasses as new potential thermoelectric materials: an As–Ge–Se–Sb case’ by A. Dahshan, et al., Dalton Trans., 2015, 44, 14799–14804.


The authors regret that Table 1, Fig. 2 and Fig. 3 of the published version of the above paper are incorrect as the units reported in columns nσa, nsb, μa and τa of the table did not account the effective electron mass (m*) and its unit in SI units. The unit of electron mass was taken in gram while others are in SI units. This has affected the magnitude of data although there is no effect on the nature of data plots or overall trends in the data reported. There are no changes to the conclusions of the paper. The authors would like to apologise for any inconvenience caused.
Table 1 Some electrical parameters as a function of Sb content for the As14Ge14Se72−xSbx (where x = 3, 6, 9, 12 and 15 at%) thin films
x σ × 10−9 (Ω m)−1 σ 0 × 103 (Ω m)−1 S (μV K−1) ΔE (eV) ΔEs (eV) δ (eV) n σ × 1012 (m−3) n s × 1014 (m−3) μ × 10−3 (m2 V−1 s−1) E F (meV) τ × 10−14 (s)
a At 300 K. b At 333 K.
3 1.14 7.76 855.2 0.765 0.620 0.145 3.68 1.539 1.93 9.75 1.09
6 8.15 10.16 955.3 0.721 0.602 0.119 20.14 1.304 2.53 8.73 1.44
9 72.77 22.59 999.2 0.685 0.571 0.114 80.93 1.219 5.62 8.34 3.20
12 587.25 42.00 1055.0 0.647 0.563 0.084 351.25 1.124 10.45 7.91 5.95
15 1945.25 66.78 1124.0 0.628 0.547 0.081 731.76 1.021 16.61 7.42 9.46



image file: c5dt90222c-f2.tif
Fig. 2 Free carrier relaxation time (τ) as a function of temperature for As14Ge14Se72−xSbx (where x = 3, 6, 9, 12 and 15 at%) thin films.

image file: c5dt90222c-f3.tif
Fig. 3 Free carrier concentration (nσ) obtained from electrical conductivity as a function of temperature (T) for As14Ge14Se72−xSbx (where x = 3, 6, 9, 12 and 15 at%) thin films.

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.


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