A.
Dahshan
ab,
Pankaj
Sharma
*c and
K. A.
Aly
de
aDepartment of Physics, Faculty of Science, Port Said University, Port Said, Egypt
bDepartment of Physics, Faculty of Science for Girls, King Khalid University, Abha, Saudi Arabia
cDepartment of Physics and Materials Science, Jaypee University of Information Technology, Waknaghat, Solan, H.P. 173234, India. E-mail: pks_phy@yahoo.co.in
dDepartment of Physics, Faculty of Science and Arts, Jeddah University, Jeddah, Saudi Arabia
eDepartment of Physics, Faculty of Science, Al-Azhar University, Assiut Branch, Assiut, Egypt
First published on 20th January 2016
Correction for ‘Semiconducting quaternary chalcogenide glasses as new potential thermoelectric materials: an As–Ge–Se–Sb case’ by A. Dahshan, et al., Dalton Trans., 2015, 44, 14799–14804.
x | σ × 10−9 (Ω m)−1 | σ 0 × 103 (Ω m)−1 | S (μV K−1) | ΔE (eV) | ΔEs (eV) | δ (eV) | n σ × 1012 (m−3) | n s × 1014 (m−3) | μ × 10−3 (m2 V−1 s−1) | E F (meV) | τ × 10−14 (s) |
---|---|---|---|---|---|---|---|---|---|---|---|
a At 300 K. b At 333 K. | |||||||||||
3 | 1.14 | 7.76 | 855.2 | 0.765 | 0.620 | 0.145 | 3.68 | 1.539 | 1.93 | 9.75 | 1.09 |
6 | 8.15 | 10.16 | 955.3 | 0.721 | 0.602 | 0.119 | 20.14 | 1.304 | 2.53 | 8.73 | 1.44 |
9 | 72.77 | 22.59 | 999.2 | 0.685 | 0.571 | 0.114 | 80.93 | 1.219 | 5.62 | 8.34 | 3.20 |
12 | 587.25 | 42.00 | 1055.0 | 0.647 | 0.563 | 0.084 | 351.25 | 1.124 | 10.45 | 7.91 | 5.95 |
15 | 1945.25 | 66.78 | 1124.0 | 0.628 | 0.547 | 0.081 | 731.76 | 1.021 | 16.61 | 7.42 | 9.46 |
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Fig. 2 Free carrier relaxation time (τ) as a function of temperature for As14Ge14Se72−xSbx (where x = 3, 6, 9, 12 and 15 at%) thin films. |
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Fig. 3 Free carrier concentration (nσ) obtained from electrical conductivity as a function of temperature (T) for As14Ge14Se72−xSbx (where x = 3, 6, 9, 12 and 15 at%) thin films. |
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