Open Access Article
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Correction: The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC(100) four terminal devices
Afzaal
Qamar
*a,
Hoang-Phuong
Phan
a,
Jisheng
Han
a,
Philip
Tanner
a,
Toan
Dinh
a,
Li
Wang
a,
Sima
Dimitrijev
ab and
Dzung Viet
Dao
ab
aQueensland Micro- and Nanotechnology Centre, Griffith University, Queensland, Australia. E-mail: afzaal.qamar@griffithuni.edu.au
bSchool of Engineering, Griffith University, Queensland, Australia
First published on 2nd September 2015
Abstract
Correction for ‘The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC(100) four terminal devices’ by Afzaal Qamar et al., J. Mater. Chem. C, 2015, 3, 8804–8809.
The details for ref. 34 are incorrect in the PDF version of this communication article. The correct details are given below1 and were updated in the HTML version of the original article and republished on 26th August 2015.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
References
- A. Qamar, H.-P. Phan, D. V. Dao, P. Tanner, T. Dinh, L. Wang and S. Dimitrijev, IEEE Electron Device Lett., 2015, 36(7), 708–710 CrossRef.
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